DP3407Q

DP3407Q DP3407Q P-Channel Enhancement Mode Field Effect Transistor General description P-Channel Enhancement Mode Field Effect Transistor Features: • VDS (V) =-30V • ID =-4.1 A • RDS(ON) ＜ 60mΩ (VGS =-10V) • RDS(ON) ＜ 90mΩ (VGS =-4.5V) • Trench Power LV MOSFET technology • High density cell design for Low RDS(ON) • High Speed switching • Battery protection • Load switch • Power management Device Marking: Device Type Marking Shipping DP3407Q A7** 3,000/Reel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±20 V ID -4.1 A Drain Current TA=25℃ @ Steady State TA=70℃ @ Steady State -3.2 Pulsed Drain Current A IDM -15 A Total Power Dissipation @ TA=25℃ PD 1.5 W RθJA 82 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range www.doeshare.net Page 1 of 4 DP3407Q Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ -1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.6 -2.4 V Static Drain-Source On-Resistance RDS(ON) VGS= -10V, ID=-4.1A 40 60 mΩ VGS= -4.5V, ID=-3.5A 55 90 IS=-4.1A,VGS=0V -0.8 -1.2 V -4.1 A Static Parameter Gate-Body Leakage Current Diode Forward Voltage Maximum Body-Diode Continuous Current VSD -1.0 V IS Dynamic Parameters Input Capacitance Ciss 580 Output Capacitance Coss Reverse Transfer Capacitance Crss 74 Total Gate Charge Qg 6.8 Gate Source Charge Qgs Gate Drain Charge Qgd Turn-on Delay Time tD(on) Turn-on Rise Time tr Turn-off Delay Time tD(off) 19 tf 10 VDS=-15V,VGS=0V,f=1MHZ 98 pF Switching Parameters Turn-off Fall Time VGS=-10V,VDS=-15V,ID=-4.1A 1.0 nC 1.4 VGS=-10V,VDD=-15V, RL=15Ω,ID=1A, RGEN=2.5Ω 14 ns 61 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.doeshare.net Page 2 of 4 DP3407Q Typical Performance Characteristics Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure5. Drain-Source on Resistance www.doeshare.net Figure2. Transfer Characteristics Figure4. Gate Charge Figure6. Drain-Source on Resistance Page 3 of 4 DP3407Q Important Notice and Disclaimer DOESHARE has used reasonable care in preparing the information included in this document, but DOESHARE does not warrant that such information is error free. DOESHARE assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. DOESHARE no warranty, representation or guarantee regarding the documents, circuits and products specification, DOESHARE reservation rights to make changes for any documents, products, circuits and specifications at any time without notice. Purchasers are solely responsible for the choice, selection and use of the DOESHARE products and services described herein, and DOESHARE assumes no liability whatsoever relating to the choice, selection or use of the products and services described herein. No license, express or implied, by implication or otherwise under any intellectual property rights of DOESHARE. Resale of DOESHARE products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by DOESHARE for the DOESHARE product or service described herein and shall not create or extend in any manner whatsoever, any liability of DOESHARE. www.doeshare.net Page 4 of 4