STD15P6F6AG

STD15P6F6AG -100V P-Channel Enhancement Mode MOSFET Description Dimensions TO-252 The STD15P6F6AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-15A Pin Configuration RDS(ON) < 185mΩ @ VGS=10V (Type：145mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) STD15P6F6AG TO-252 AP15P10D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -15 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -12 A IDM Pulsed Drain Current2 -45 A EAS Single Pulse Avalanche Energy3 56 mJ IAS Avalanche Current -15 A PD@TC=25℃ Total Power Dissipation4 50 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 2.5 ℃/W Rev : 01.08.2021 1/5 www.leiditech.com STD15P6F6AG P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ Max. Uni ts BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250μA -100 - - V IDSS Zero Gate Voltage Drain Current VDS = -80V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250μA -1.0 - -2.5 V RDS(on) Static Drain-Source On-Resistance note1 VGS = -10V, ID = -2A - 145 185 VGS = -4.5V, ID = -1A - 170 200 Ciss Input Capacitance - 1545 - pF Coss Output Capacitance - 37 - pF Crss Reverse Transfer Capacitance - 25 - pF Qg Total Gate Charge - 27 - nC - 5.3 - nC - 3.2 - nC - 10 - ns - 27 - ns - 288 - ns - 88 - ns - - -18 A VGS = 0V, IS =-2A - - -1.3 V VGS = 0V, Isd= -6A, di/dt =100A/μs - 40 - nS - 28 - nC Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time IS VSD VDS = -50V, VGS = 0V, f = 1.0MHz VDD = -50V, ID = -2A, VGS = -10V VDS = -50V, ID = -2A RG=4.5Ω, RL=25Ω VGEN = - 10 V Maximum Continuous Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge note1 mΩ Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is V DD =-72V,VGS =-10V,L=0.1mH,IAS =-15A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Rev : 01.08.2021 2/5 www.leiditech.com STD15P6F6AG Typical Characteristics Rev : 01.08.2021 3/5 www.leiditech.com STD15P6F6AG Rev : 01.08.2021 4/5 www.leiditech.com STD15P6F6AG Package Mechanical Data:TO-252-3L E A B2 Dimensions Ref. C2 L D H V2 D1 V1 A2 V1 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 5.30REF 0.209REF 0.268 E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.182 0.176 7° 0.184 0.065 7° 0° V2 DETAIL A Max. 2.10 V1 L2 Typ. Min. D1 DETAIL A Inches Max. V1 C E1 Typ. Min. A B G Millimeters 6° 0° 6° TO-252 Reel Spectification-TO-252 B D 0 P0 P2 E Ref. t1 A A D1 B0 F W Dimensions T K0 P1 A0 B 5° Φ3 29 A A B B 20 Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 0.063 D1 1.40 1.50 1.60 0.055 0.059 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.08.2021 5/5 www.leiditech.com