ACTT6-800E,127

ACTT6-800E AC Thyristor Triac power switch 7 September 2018 Product data sheet 1. General description AC Thyristor Triac power switch in a SOT78 (TO-220AB) plastic package with self-protective clamping capabilities against low and high energy transients. 2. Features and benefits • • • • • • • • • • • Clamping structure ensuring safe high over-voltage withstand capability Direct interfacing with low power drivers and microcontrollers Full cycle AC conduction Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Protective self turn-on capability for high energy transients Safe clamping capability for low energy over-voltage transients Sensitive gate for easy logic level triggering Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications • • • • AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Min Typ Max Unit - - 800 V - - 6 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 16.7 ms state current - - 56 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - - 51 A - - 125 °C - - 2 kV Tj junction temperature VPP peak pulse voltage Conditions full sine wave; Tmb ≤ 108 °C; Fig. 1; Fig. 2; Fig. 3 Tj = 25 °C; non-repetitive, off-state; Fig. 6 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 - - 10 mA VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 - - 10 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 - - 10 mA Static characteristics IGT gate trigger current IH holding current VD = 12 V; Tj = 25 °C; Fig. 10 - - 25 mA VT on-state voltage IT = 8 A; Tj = 25 °C; Fig. 11 - - 1.7 V VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850 - - V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 13 500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit; Fig. 14; Fig. 15 3.5 - - A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 10 V/µs; gate open circuit; Fig. 14; Fig. 15 5 - - A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 1 V/µs; gate open circuit; Fig. 14; Fig. 15 10 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 CM common 2 LD load 3 G gate mb LD mounting base; load Simplified outline Graphic symbol LD mb G CM 003aaf296 1 2 3 TO-220AB (SOT78) ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 6. Ordering information Table 3. Ordering information Type number ACTT6-800E ACTT6-800E Product data sheet Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 800 V full sine wave; Tmb ≤ 108 °C; Fig. 1; Fig. 2; Fig. 3 - 6 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 56 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 51 A I t I t for fusing tp = 10 ms; sine-wave pulse - 13 A²s dIT/dt rate of rise of on-state current IG = 20 mA - 100 A/µs IGM peak gate current t = 20 μs - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tj junction temperature - 125 °C VPP peak pulse voltage - 2 kV over any 20 ms period Tj = 25 °C; non-repetitive, off-state; Fig. 6 003aag775 8 IT(RMS) (A) 003aag777 18 IT(RMS) (A) 15 108 °C 6 12 4 9 6 2 3 0 -50 0 50 100 Tmb (°C) 0 10-2 150 Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values ACTT6-800E Product data sheet 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 108°C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 003aag780 10 Ptot (W) 8 conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 6 105 α = 180° α Tmb(max) (°C) 120° 109 90° α 60° 113 30° 4 117 2 121 0 0 1.5 3 4.5 6 IT(RMS) (A) 125 7.5 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aag781 60 ITSM (A) 45 30 IT 15 0 ITSM t T Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 003aag782 103 ITSM IT t ITSM (A) tp Tj(init) = 25 °C max (1) 102 10 10-2 10-1 1 10 tp (ms) 102 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values IEC 61000-4-5 Standards Surge Generator RGen 2 Filtering Unit R 18 AC Mains L 2 H Load Model RG DUT 220 003aak842 Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 7 - - 2.4 K/W full cycle; Fig. 7 - - 2 K/W thermal resistance from junction to ambient free air in free air - 60 - K/W Rth(j-a) 003aag784 10 Zth(j-mb) (K/W) (2) 1 (1) 10-1 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 (1) Bidirectional (full cycle) (2) Unidirectional (half cycle) Fig. 7. Transient thermal impedance from junction to mounting base as a function of pulse width ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 - - 10 mA VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 - - 10 mA VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 - - 10 mA VD = 12 V; IG = 100 mA; LD+ G+; Tj = 25 °C; Fig. 9 - - 30 mA VD = 12 V; IG = 100 mA; LD+ G-; Tj = 25 °C; Fig. 9 - - 40 mA VD = 12 V; IG = 100 mA; LD- G-; Tj = 25 °C; Fig. 9 - - 30 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 10 - - 25 mA VT on-state voltage IT = 8 A; Tj = 25 °C; Fig. 11 - - 1.7 V VGT gate trigger voltage VD = 12 V; IT = 100 mA; Tj = 25 °C; Fig. 12 - 0.8 1 V VD = 400 V; IT = 100 mA; Tj = 125 °C; Fig. 12 0.2 0.45 - V VD = 800 V; Tj = 25 °C - - 10 µA VD = 800 V; Tj = 125 °C - - 0.5 mA ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850 - - V ID VCL off-state current clamping voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 13 500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit; Fig. 14; Fig. 15 3.5 - - A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 10 V/µs; gate open circuit; Fig. 14; Fig. 15 5 - - A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 1 V/µs; gate open circuit; Fig. 14; Fig. 15 10 - - A/ms ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 003aag785 3 (1) IGT IGT(25°C) IL IL(25°C) (2) 2 003aag786 3 2 (3) 1 1 0 -50 0 50 100 Tj (°C) 0 -50 150 (1) LD- G(2) LD+ G+ (3) LD+ G- 0 50 100 Tj (°C) 150 Fig. 9. Normalized latching current as a function of junction temperature Fig. 8. Normalized gate trigger current as a function of junction temperature 003aag787 3 003aag788 20 IT (A) IH IH(25°C) 16 2 12 8 1 4 0 -50 0 50 100 Tj (°C) 0 150 (1) 0 (2) (3) 1 2 VT (V) 3 Vo = 1.109 V; Rs = 0.076 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. Normalized holding current as a function of junction temperature Fig. 11. On-state current as a function of on-state voltage ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 003aag677 1.6 VGT A B VGT(25°C) 1.2 4 0.8 2 0.4 -50 003aag789 6 0 50 100 Tj (°C) 0 150 Fig. 12. Normalized gate trigger voltage as a function of junction temperature 003aag790 12 25 50 75 100 Tj (°C) 125 A = dVD/dt at condition Tj °C B = dVD/dt at condition Tj [125] °C Fig. 13. Normalized rate of rise of off-state voltage as a function of junction temperature 003aag791 40 A [B] A [spec] A B 30 8 20 4 10 0 25 50 75 100 Tj (°C) 0 10-1 125 ACTT6-800E Product data sheet 10 B (V/µs) 102 A [B] is dIcom/dt at condition B, dVcom/dt A [spec] is the specified data sheet value of dIcom/ dt turn-off time < 20 ms A = dIcom/dt at condition Tj °C B = dIcom/dt at condition Tj [125] °C VD = 400 V Fig. 14. Normalized critical rate of rise of commutating current as a function of junction temperature 1 Fig. 15. Normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 16. Package outline TO-220AB (SOT78) ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. ACTT6-800E Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 14 ACTT6-800E WeEn Semiconductors AC Thyristor Triac power switch 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................3 7. Limiting values............................................................. 4 8. Thermal characteristics............................................... 7 9. Characteristics..............................................................8 10. Package outline........................................................ 11 11. Legal information..................................................... 12 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 7 September 2018 ACTT6-800E Product data sheet All information provided in this document is subject to legal disclaimers. 7 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 14 / 14