BUJ303AD
NPN power transistor
23 July 2018
Product data sheet
1. General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK)
surface mountable plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching
Low thermal resistance
Surface mountable package
Very high voltage capability
Very low switching and conduction losses
3. Applications
•
•
•
•
DC-to-DC converters
High frequency electronic lighting ballasts
Inverters
Motor control systems
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICM
peak collector current
Fig. 1; Fig. 2; Fig. 3
-
-
10
A
Ptot
total power dissipation
Tmb ≤ 25 °C; Fig. 4
-
-
80
W
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
-
1000
V
IC = 5 mA; VCE = 5 V; Tmb = 25 °C;
Fig. 11
10
22
30
IC = 500 mA; VCE = 5 V; Tmb = 25 °C;
Fig. 11
14
25
35
Static characteristics
hFE
DC current gain
BUJ303AD
WeEn Semiconductors
NPN power transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
B
base
2
C
collector[1]
3
E
emitter
mb
C
mounting base; connected to
collector
Graphic symbol
C
B
E
sym123
DPAK (SOT428)
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
6. Ordering information
Table 3. Ordering information
Type number
BUJ303AD
BUJ303AD
Product data sheet
Package
Name
Description
Version
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
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BUJ303AD
WeEn Semiconductors
NPN power transistor
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
1000
V
VCEO
collector-emitter voltage
IB = 0 A
-
500
V
IC
collector current
Fig. 1; Fig. 2; Fig. 3
-
5
A
ICM
peak collector current
-
10
A
IB
base current
-
2
A
IBM
peak base current
-
4
A
Ptot
total power dissipation
-
80
W
Tstg
storage temperature
-65
150
°C
Tj
junction temperature
-
150
°C
Tmb ≤ 25 °C; Fig. 4
VCC
LC
IBon
VBB
LB
003aag028
12
VCL(CE)
probe point
IC
(A)
8
DUT
001aab999
4
Fig. 1. Test circuit for reverse bias safe operating area
0
0
400
800
1200
VCEclamp (V)
Fig. 2. Reverse bias safe operating area
BUJ303AD
Product data sheet
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BUJ303AD
WeEn Semiconductors
NPN power transistor
003aag029
102
IC
(A)
duty cycle = 0.01
10
ICMmax
ICmax
II(3)
tp = 10 µs
(1)
100 µs
1
(2)
1 ms
I(3)
10-1
10 ms
DC
10-2
III(3)
1
102
10
103
VCEclamp (V)
(1) Ptot maximum and Ptot peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs.
Fig. 3. Forward bias safe operating area for Tmb ≤ 25 °C
001aab993
120
Pder
(%)
80
40
0
0
40
80
120
Tmb (°C)
160
Fig. 4. Normalized total power dissipation as a function of mounting base temperature
BUJ303AD
Product data sheet
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BUJ303AD
WeEn Semiconductors
NPN power transistor
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
1.56
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
printed circuit board (FR4) mounted;
minimum footprint
-
75
-
K/W
001aab998
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10- 1
0.05
0.02
Ptot
δ=
tp
T
0.01
tp
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
1
t
T
tp (s)
10
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width
BUJ303AD
Product data sheet
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BUJ303AD
WeEn Semiconductors
NPN power transistor
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
collector-emitter cut-off VBE = 0 V; VCE = 1000 V
current (base shorted)
VBE = 0 V; VCE = 1000 V; Tj = 125 °C
[1]
-
-
1
mA
[1]
-
-
2
mA
ICBO
collector-base cut-off
current (emitter open)
[1]
-
-
1
mA
ICEO
collector-emitter cut-off VCE = 500 V; IB = 0 A; Tmb = 25 °C
current (base open)
[1]
-
-
0.1
mA
IEBO
emitter-base cut-off
VEB = 9 V; IC = 0 A; Tmb = 25 °C
current (collector open)
-
-
0.1
mA
VCEOsus
collector-emitter
sustaining voltage
(base open)
IB = 0 A; IC = 100 mA; LC = 25 mH;
Tmb = 25 °C; Fig. 6; Fig. 7
500
-
-
V
VCEsat
collector-emitter
saturation voltage
IC = 3 A; IB = 0.6 A; Tmb = 25 °C; Fig. 8;
Fig. 9
-
0.25
1.5
V
VBEsat
base-emitter saturation IC = 3 A; IB = 0.6 A; Tmb = 25 °C;
voltage
Fig. 10
-
0.97
1.3
V
hFE
DC current gain
IC = 5 mA; VCE = 5 V; Tmb = 25 °C;
Fig. 11
10
22
30
IC = 500 mA; VCE = 5 V; Tmb = 25 °C;
Fig. 11
14
25
35
IC = 2.5 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
10
13.5
17
IC = 3 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11
-
12
-
-
3.4
4
µs
-
0.33
0.45
µs
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tmb = 25 °C; Fig. 14; Fig. 15
-
1.4
1.6
µs
-
1.7
1.9
µs
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; Fig. 14; Fig. 15
-
145
160
ns
-
160
200
ns
ICES
hFEsat
DC saturation current
gain
VCB = 1000 V; IE = 0 A; Tmb = 25 °C
Dynamic characteristics (switching times - resistive load)
ts
storage time
tf
fall time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tmb = 25 °C; Fig. 12; Fig. 13
Dynamic characteristics (switching times - inductive load)
ts
storage time
tf
[1]
fall time
Measured with half-sine wave voltage (curve tracer).
BUJ303AD
Product data sheet
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BUJ303AD
WeEn Semiconductors
NPN power transistor
IC
(mA)
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
250
vertical
6V
300 Ω
1Ω
100
30 Hz to 60 Hz
001aab987
10
0
Fig. 6. Test circuit for collector-emitter sustaining
voltage
min
VCE (V)
VCEOsus
001aab988
Fig. 7. Oscilloscope display for collector-emitter
sustaining voltage test waveform
003aag032
003aag031
2.0
VCEsat
(V)
1.6
0.5
VCEsat
(V)
IC = 1 A
2A 3A
4A
0.4
1.2
0.3
0.8
0.2
0.4
0.1
0
10-1
1
IC (A)
0
10-2
10
Fig. 8. Collector-emitter saturation voltage as a function
of collector current; typical values
BUJ303AD
Product data sheet
10-1
1
IB (A)
10
Fig. 9. Collector-emitter saturation voltage as a function
of base current; typical values
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BUJ303AD
WeEn Semiconductors
NPN power transistor
003aag033
1.4
VBEsat
(V)
1.2
003aag034
102
hFE
VCE = 5 V
1.0
0.8
10
0.6
0.4
1V
0.2
0
10-1
1
IC (A)
1
10-2
10
Fig. 10. Base-emitter saturation voltage as a function of
collector current; typical values
VIM
0
RB
1
10
IC (A)
Fig. 11. DC current gain as a function of collector
current; typical values
IC
VCC
RL
10-1
ICon
90 %
90 %
DUT
10 %
tp
T
001aab989
IB
ts
ton
tf
t
toff
IBon
Fig. 12. Test circuit for resistive load switching
10 %
t
tr ≤ 30 ns
- IBoff
001aab990
Fig. 13. Switching times waveforms for resistive load
BUJ303AD
Product data sheet
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BUJ303AD
WeEn Semiconductors
NPN power transistor
VCC
IC
ICon
90 %
LC
IBon
VBB
LB
DUT
001aab991
10 %
Fig. 14. Test circuit for inductive load switching
IB
tf
ts
toff
t
IBon
t
- IBoff
001aab992
Fig. 15. Switching times waveforms for inductive load
BUJ303AD
Product data sheet
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BUJ303AD
WeEn Semiconductors
NPN power transistor
10. Package outline
Fig. 16. Package outline DPAK (SOT428)
BUJ303AD
Product data sheet
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BUJ303AD
WeEn Semiconductors
NPN power transistor
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11. Legal information
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Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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specified use without further testing or modification.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
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BUJ303AD
Product data sheet
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
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BUJ303AD
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NPN power transistor
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Trademarks
Notice: All referenced brands, product names, service names and
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BUJ303AD
WeEn Semiconductors
NPN power transistor
12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 5
9. Characteristics..............................................................6
10. Package outline........................................................ 10
11. Legal information..................................................... 11
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WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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Date of release: 23 July 2018
BUJ303AD
Product data sheet
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