BLF7G27L-200PB,112

BLF7G27L-200PB Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2620 to 2690 1700 32 65 16.5 29 30[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits        Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2600 MHz to 2700 MHz frequency range BLF7G27L-200PB Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 source 6, 7 sense drain 8, 9 sense gate [1] Simplified outline 6 1 2 7 8 3 4 9 Graphic symbol 6, 7 1 3 5 8, 9 4 [1] 5 2 sym127 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF7G27L-200PB Name Description Version - SOT1110A flanged LDMOST ceramic package; 2 mounting holes; 8 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) BLF7G27L-200PB#3 Product data sheet Conditions thermal resistance from junction to case Tcase = 80 C; PL = 65 W; VDS = 32 V; IDq = 1700 mA All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 Typ Unit 0.22 K/W © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 14 BLF7G27L-200PB Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C per section, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.44 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 144 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 28 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 7.2 A - 10.6 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.04 A - 0.1  IDq quiescent drain current main transistor: 1530 1700 1870 mA - VDS = 32 V sense transistor: IDS = 31 mA VDS = 30.1 V 7. Test information Remark: All testing performed in a class-AB production test circuit. Table 7. Functional test information Mode of operation: 2-carrier W-CDMA, PAR = 8.4 dB at 0.01 % probability on the CCDF, 3GPP test model 1; 1-64 DPCH; f1 = 2622.5 MHz; f2 = 2627.5 MHz; f3 = 2682.5 MHz; f4 = 2687.5 MHz; RF performance at VDS = 32 V; IDq = 1700 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - Gp power gain 14.8 16.5 17.7 dB RLin input return loss - D drain efficiency 25.5 29 ACPR adjacent channel power ratio - 65 - 15 5 - 30 27 W dB % dBc 7.1 Ruggedness in class-AB operation The BLF7G27L-200PB is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 1700 mA; PL = 200 W (CW); f = 2600 MHz. BLF7G27L-200PB#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 14 BLF7G27L-200PB Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data half device; IDq = 850 mA; VDS = 32 V. f ZS[1] ZL[1] (MHz) () () 2500 3.07  j3.51 2.79  j4.86 2600 4.51  j12.51 2.61  j4.49 2700 7.56  j15.0 2.36  j4.41 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 1 Tone CW aaa-002645 19 Gp (dB) aaa-002647 50 ηD (%) 40 (3) (1) (2) 17 30 (2) (1) (3) 15 20 13 10 11 0 0 50 100 150 200 250 PL(AV) (W) 300 0 VDS = 32 V; IDq = 1700 mA. 50 (1) f = 2600 MHz (2) f = 2650 MHz (2) f = 2650 MHz (3) f = 2700 MHz (3) f = 2700 MHz Power gain as a function of average load power; typical values BLF7G27L-200PB#3 Product data sheet 150 200 PL(AV) (W) 250 VDS = 32 V; IDq = 1700 mA. (1) f = 2600 MHz Fig 2. 100 Fig 3. Drain efficiency as a function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 14 BLF7G27L-200PB Power LDMOS transistor 7.4 1-carrier W-CDMA aaa-002648 18 45 Gp (dB) ηD (%) 17 PAR (dB) 35 (6) (5) (4) (2) (1) (3) 16 15 14 0 25 50 75 100 PL(AV) (W) aaa-002649 8 7 25 6 15 5 5 125 (1) (2) (3) 4 0 VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01  probability on the CCDF. 25 50 75 100 PL(AV) (W) 125 VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01  probability on the CCDF. (1) Gp; f = 2620 MHz (1) f = 2620 MHz (2) Gp; f = 2650 MHz (2) f = 2650 MHz (3) Gp; f = 2690 MHz (3) f = 2690 MHz (4) D; f = 2620 MHz (5) D; f = 2650 MHz (6) D; f = 2690 MHz Fig 4. Power gain and drain efficiency as function of average load power; typical values Fig 5. Peak-to-average power ratio as a function of peak power; typical values aaa-002650 -25 ACPR5M (dBc) -30 -35 -40 -45 (1) (2) (3) -50 -55 0 25 50 75 100 PL(AV) (W) 125 VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01  probability on the CCDF. (1) f = 2620 MHz (2) f = 2650 MHz (3) f = 2690 MHz Fig 6. Adjacent power channel ratio (5 MHz) as a function of average load power; typical values BLF7G27L-200PB#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 14 BLF7G27L-200PB Power LDMOS transistor 7.5 2-carrier W-CDMA aaa-002651 17.4 Gp (dB) ηD 40.0 ηD (%) Gp (dB) 17.0 30.0 17.0 16.6 20.0 16.6 10.0 16.2 Gp 16.2 15.8 0 25 50 75 100 PL(AV) (W) 0.0 125 VDS = 32 V; IDq = 1700 mA; f = 2650 MHz; channel spacing = 5 MHz; PAR = 8.4 dB at 0.01  probability on the CCDF. aaa-002652 17.4 (3) (2) (1) 15.8 0 25 50 75 100 PL(AV) (W) 125 VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz; PAR = 8.4 dB at 0.01  probability on the CCDF. (1) f = 2620 MHz (2) f = 2650 MHz (3) f = 2690 MHz Fig 7. Power gain and drain efficiency as function of average load power; typical values aaa-002653 40 ηD (%) Fig 8. Power gain as a function of average load power; typical values aaa-002654 -15 ACPR5M (dBc) 32 -25 24 (3) (2) (1) -35 16 (3) (1) (2) -45 8 0 -55 0 25 50 75 100 PL(AV) (W) 125 VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz; PAR = 8.4 dB at 0.01  probability on the CCDF. 0 25 (1) f = 2620 MHz (2) f = 2650 MHz (2) f = 2650 MHz (3) f = 2690 MHz (3) f = 2690 MHz Drain efficiency as a function of average load power; typical values BLF7G27L-200PB#3 Product data sheet 75 100 PL(AV) (W) 125 VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz; PAR = 8.4 dB at 0.01  probability on the CCDF. (1) f = 2620 MHz Fig 9. 50 Fig 10. Adjacent power channel ratio (5 MHz) as a function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 14 BLF7G27L-200PB Power LDMOS transistor 7.6 IS-95 aaa-002655 17.2 Gp (dB) aaa-002656 40 ηD (%) (2) (3) 16.8 30 (1) 16.4 20 16.0 10 15.6 (3) (1) (2) 0 0 20 40 60 80 PL(AV) (W) 100 0 VDS = 32 V; IDq = 1700 mA. 20 40 60 80 PL(AV) (W) 100 VDS = 32 V; IDq = 1700 mA. (1) f = 2600 MHz (1) f = 2600 MHz (2) f = 2650 MHz (2) f = 2650 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 11. Single carrier IS-95 power gain as a function of average output power; typical values aaa-002657 -35 ACPR885k (dBc) -40 Fig 12. Single carrier IS-95 drain efficiency as a function of average load power; typical values aaa-002658 -55 ACPR1980k -60 -45 (3) (2) (1) -50 (1) (3) (2) -65 -55 -70 -60 -65 -75 0 20 40 60 80 PL(AV) (W) 100 VDS = 32 V; IDq = 1700 mA. 0 20 (1) f = 2600 MHz (2) f = 2650 MHz (2) f = 2650 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 13. Single carrier IS-95 ACPR at 885 kHz as a function of average output power; typical values Product data sheet 60 80 PL(AV) 100 VDS = 32 V; IDq = 1700 mA. (1) f = 2600 MHz BLF7G27L-200PB#3 40 Fig 14. Single carrier IS-95 at ACPR at 1980 kHz as a function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 14 BLF7G27L-200PB Power LDMOS transistor 7.7 Test circuit C6 R1 R3 R2 C1 C2 R4 C7 C8 C5 C9 C3 R5 C10 C12 R6 C4 C11 C13 aaa-001942 See Table 9 for list of components. Fig 15. Component layout Table 9. List of components See Figure 15 for component layout. The used PCB material is Rogers RO4350B with a thickness of 0.76 mm. Component C1, C6, C13 multilayer ceramic chip capacitor Remarks 4.7 F [1] Murata ATC100B C2, C4 multilayer ceramic chip capacitor 9.1 pF C3 multilayer ceramic chip capacitor 22 pF [3] ATC100A C5, C10, C11 multilayer ceramic chip capacitor 8.2 pF [2] ATC100B multilayer ceramic chip capacitor 470 nF [4] AVX C8, C12 multilayer ceramic chip capacitor 10 F [5] TDK C9 electrolytic capacitor 470 F R1 chip resistor 820  [6] Philips 0603 chip resistor 2K2  [6] Philips 0603 R3 chip resistor 22  [6] Philips 0603 R4, R6 chip resistor 10  [6] Philips 0603 R5 chip resistor 33  [6] Philips 0603 R2 Product data sheet Value [2] C7 BLF7G27L-200PB#3 Description [1] Murata or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 100A or capacitor of same quality. [4] AVX or capacitor of same quality. [5] TDK or capacitor of same quality. [6] Philips or resistor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 14 BLF7G27L-200PB Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 8 leads SOT1110A D A F L D1 U1 B q C H1 6 w2 1 c D 7 2 a U2 p Z E1 E H 5 A 8 3 9 4 b1 b w3 e w1 Q A B w3 Z a 5.97 64° 5.72 62° 0.25 0 5 0.235 64° 10 mm 0.01 scale 0.225 62° Dimensions Unit(1) mm A max 5.36 nom min 3.99 b b1 c D e D1 1.14 11.81 0.18 31.55 31.52 0.89 11.56 0.10 30.94 30.96 p Q(2) 9.50 9.53 1.75 17.12 25.53 2.67 3.30 2.26 9.30 9.27 1.50 16.10 25.27 2.41 3.05 2.01 E E1 F H H1 L 13.72 q References JEDEC w1 JEITA w2 0.25 0.51 41.02 10.03 1.625 0.405 0.01 0.02 1.4 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. 3. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. IEC U2 35.56 max 0.211 0.045 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.105 0.13 0.089 0.540 inches nom min 0.157 0.035 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.095 0.12 0.079 Outline version U1 41.28 10.29 1.615 0.395 sot1110a_po European projection Issue date 10-02-02 12-02-20 SOT1110A Fig 16. Package outline SOT1110A BLF7G27L-200PB#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 14 BLF7G27L-200PB Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. BLF7G27L-200PB#3 Product data sheet Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 14 BLF7G27L-200PB Power LDMOS transistor 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G27L-200PB#3 20150901 Product data sheet - BLF7G27L-200PB v.2 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF7G27L-200PB v.2 20120220 Product data sheet BLF7G27L-200PB_27LS-200PB v.1 20110405 Objective data sheet - BLF7G27L-200PB#3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 - BLF7G27L-200PB_ 27LS-200PB v.1 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 14 BLF7G27L-200PB Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF7G27L-200PB#3 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 14 BLF7G27L-200PB Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF7G27L-200PB#3 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 14 BLF7G27L-200PB Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF7G27L-200PB#3