1N5819WT

1N5819WT Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE SOD-523 FEATURES     Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance MARKING: S4 S4 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit 40 V RMS Reverse Voltage 28 V Forward Continuous Current 350 mA IFSM Non-Repetitive Peak Forward Surge Current@t=8.3ms 2 A PD Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 667 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR VR(RMS) IFM RΘJA DC Blocking Voltage ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Reverse recovery time www.slkormicro.com Symbol V(BR) IR VF Ctot trr Test conditions IR=100μA Min Typ Max 40 Unit V VR=30V 5 VR=20V 2 VR=10V 1 IF=1mA 0.27 IF=5mA 0.32 IF=20mA 0.37 IF=200mA 0.6 μA V VR=0V,f=1MHz 50 pF IF= IR=200mA, Irr=0.1×IR, RL=100Ω 10 ns 1 1N5819WT Typical Characteristics Forward 1000 Characteristics Reverse 1000 Characteristics (uA) Ta=100℃ 100 REVERSE CURRENT IR FORWARD CURRENT IF (mA) Ta=100℃ Ta=25℃ 10 100 10 Ta=25℃ 1 1 100 200 300 FORWARD VOLTAGE 400 VF 500 0.1 600 10 20 30 REVERSE VOLTAGE (mV) Capacitance Characteristics 50 0 VR 40 (V) Power Derating Curve 200 Ta=25℃ (mW) 150 PD 40 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 30 20 100 50 10 0 0 5 10 15 REVERSE VOLTAGE www.slkormicro.com 20 VR 25 0 30 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta (℃ ) 125 1N5819WT SOD-523 Package Outline Dimensions 'LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.770 0.510 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7° REF 6\PERO A A1 b c D E E1 E2 L  SOD-523 Suggested Pad Layout www.slkormicro.com 3 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7° REF