HY1210D

HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature  Pin Description 100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available G D S (RoHS Compliant) G G TO-252-2L D D S S TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems N-Channel MOSFET Ordering and Marking Information Package Code D U HY1210 HY1210 YYXXXJWW G YYXXXJWW G V D: TO-252-2L HY1210 U: TO-251-3L V: TO-251-3S Date Code YYXXX WW YYXXXJWW G Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.1 HY1210D/U/V Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperture 150 °C -55 to 150 °C Tc=25°C 26 A Tc=25°C 100 A Tc=25°C 26 A Tc=100°C 17 A Tc=25°C 50 W Tc=100°C 20 W TJ TSTG Storage Temperture Range IS Drain Current-Continuous Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 2.5 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 110 °C/W EAS Single Pulsed-Avalanche Energy *** 108 mJ * ** *** L=0.3mH Repetitive rating ; pulse width limited by max junction temperature. Surface mounted on a square inches Cu board. Limited by TJmax , starting TJ=25°C, L = 0.3mH, VD= 80V, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY1210 Unit Min Typ Max VGS=0V,IDS=250uA 100 - - V VDS=100V, VGS=0V - - 1 uA - - 30 uA 3.0 V ±100 nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source LeakageCurrent VGS(th) IGSS RDS(ON)* TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250uA 1.0 2.0 Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=10V,IDS=10A - 32 36 mΩ VGS=4.5V,IDS=10A - 34 38 mΩ ISD=10A,VGS=0V - 0.8 1.3 V - 21 - ns - 52 - nC Drain-Source On-state Resistance Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=13A,dISD/dt=100A/us 2 V1.1 HY1210D/U/V Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY110 Min Typ Max Unit Dynamic Characteristics Ciss Input Capacitance VGS=0V,VDS=0V,F=1 MHz VGS=0V, Coss Output Capacitance VDS=25V, - 38 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 5.8 - td(ON) Turn-on Delay Time - 11 - RG Tr td(OFF) Tf Gate Resistance - 1.7 - - 2543 - Turn-on Rise Time VDD=50V,RG=3Ω, - 8 - Turn-off Delay Time IDS=13A,VGS=10V - 24 - - 13 - - 72 - - 8 - - 14 - Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =80V, VGS=10V， ID=13A, nC Note: *Pulse test; pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com 3 V1.1 HY1210D/U/V Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Thermal Zθjc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com ID-Drain Current(A) 4 V1.1 HY1210D/U/V Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com QG-Gate Charge (nC) 5 V1.1 HY1210D/U/V Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms www.hymexa.com 6 V1.1 HY1210D/U/V Device Per Unit Package Type Unit Quantity TO-252-2L TO-252-2L TO-251-3L TO-251-3S Tube 75 Reel Tube Tube 2500 75 75 Package Information TO-252-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 7 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 - - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° V1.1 HY1210D/U/V TO-251-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2' 0.00 0.04 0.10 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 8 V1.1 HY1210D/U/V TO-251-3S COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 2.286BSC H 10.00 11.22 11.44 L1 3.90 4.10 4.30 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 9 V1.1 HY1210D/U/V Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 10 V1.1 HY1210D/U/V Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness