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MMA-121633-R5EVB

MMA-121633-R5EVB

  • 厂商:

    MWT

  • 封装:

    -

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
MMA-121633-R5EVB 数据手册
MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Old package not recommended for new design Features: • • • • • • • • • Frequency Range: 12.5 – 15.5 GHz P1dB: 32 dBm IM3 Level -44dBc @Po=20dBm/tone Gain: 23.5 dB Vdd =4 to 6 V Ids = 1200 to 2500 mA Input and Output Fully Matched to 50 Ω Integrated RF power detector Surface Mount QFN 5x5mm Package Applications: • • • Communication systems Microwave instrumentations Point to Point Radios Functional Block Diagram Description: The MMA-121633 is a GaAs MMIC linear power amplifier with 2-Watt output power and high gain over full 12.5 to 15.5GHz frequency range. This amplifier was optimally designed for high linearity applications at 5dB back-off from P-1 condition. Absolute Maximum Ratings: SYMBOL PARAMETERS (Ta= 25 °C)* UNITS Min. Max. Vds Drain-Source Voltage V 6.5 Vg Gate-Source Voltage V -2.1 0 Ig First Gate Current mA -17 17 Pd Power Dissipation W 16.8 Pin max Toper RF Input Power Operating Temperature dBm ºC 20 -40 to +85 Tch Channel Temperature ºC +150 Tstg Storage Temperature ºC -55 to +150 Tmax Max. Assembly Temp (20 sec max) ºC +250 *Operation of this device above any one of these parameters may cause permanent damage. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 1 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Electrical Specifications: Vds=6V,Vg=-0.9V, Ids=1400mA, Ta=25 °C Z0=50 ohm Parameter Units Typical Data Frequency Range Gain (Typ / Min) Gain Flatness (Typ / Max) Input RL(Typ/Max) Output RL(Typ/Max) Output P1dB(Typ/Min) IM3 Level @Po=20dBm/tone Output Psat(Typ/Min) Operating Current at P1dB (Typ/Max) Thermal Resistance GHz dB +/-dB dB dB dBm dBc dBm 12.5 - 15.5 23.5 / 22 1.5 / 2 10/8 10/8 32/31 -44 34/33 mA 2000 / 2300 °C /W 3.8 (1) Output IM3 is measured with two tones at output power of 20 dBm/tone separated by 20 MHz. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 2 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Typical RF Performance: Vds=6V, Vg=-0.9V, Ids=1400mA, Z0=50 ohm, Ta=25 ºC 35 DB(|S(1,1)|) MEAS 30 DB(|S(2,1)|) MEAS S11, S21, and S22 (dB) 25 DB(|S(2,2)|) MEAS 20 15 10 5 0 -5 -10 -15 -20 8 9 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 21 S11[dB], S21[dB], and S22[dB] vs. Frequency IM3 Level [dBc] vs. output power/tone [dBm] P-1 and Psat vs. Frequency Pout[dBm], and Ids[mA] vs. Input power [dBm] MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 3 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Typical Bias dependent RF Performance: Vds=4V Bias dependent P1 vs. Frequency @Vds=4V, Idsq=1400mA Bias dependent P-3 vs. Frequency @Vds=4V, Idsq=2000mA S11, S21, and S22 (dB) 35 30 DB(|S(1,1)|) MEAS 25 DB(|S(2,1)|) MEAS DB(|S(2,2)|) MEAS 20 15 10 5 0 -5 -10 -15 -20 8 9 10 11 12 13 14 15 16 Frequency (GHz) 17 18 Vds=4V, Ids=1400mA 19 20 21 @Vds=4V, Idsq=2500mA MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 4 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Typical Bias dependent RF Performance: Vds=5V Bias dependent P1 vs. Frequency @Vds=5V, Idsq=1400mA Bias dependent P-3 vs. Frequency @Vds=5V, Idsq=2000mA S11, S21, and S22 (dB) 35 30 DB(|S(1,1)|) MEAS 25 DB(|S(2,1)|) MEAS DB(|S(2,2)|) MEAS 20 15 10 5 0 -5 -10 -15 -20 8 9 10 11 12 13 14 15 16 Frequency (GHz) 17 18 Vds=5V, Ids=1400mA 19 20 21 @Vds=5V, Idsq=2500mA MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 5 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Typical Bias dependent RF Performance: Vds=6V Bias dependent P1 vs. Frequency @Vds=6V, Idsq=1400mA Bias dependent P-3 vs. Frequency @Vds=6V, Idsq=2000mA S11, S21, and S22 (dB) 35 30 DB(|S(1,1)|) MEAS 25 DB(|S(2,1)|) MEAS DB(|S(2,2)|) MEAS 20 15 10 5 0 -5 -10 -15 -20 8 9 10 11 12 13 14 15 16 Frequency (GHz) 17 Vds=6V, Ids=2000mA 18 19 20 21 @Vds=6V, Idsq=2500mA MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 6 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Typical Over Temperature Performance: Vds=6V, Ids=1400mA, Z0=50 ohm, Ta=-40, 25, and 85 ºC 30 DB(|S(2,1)|) sp_6V1440mA_25C 28 DB(|S(2,1)|) sp_6V1440mA_n40C 26 DB(|S(2,1)|) sp_6V1440mA_85C S21 (dB) 24 22 20 18 16 14 12 10 8 9 10 P1 over temperature 11 12 13 14 15 16 17 Frequency (GHz) 18 19 20 21 22 S21(dB) over temperature 0 -2 -4 S11 (dB) -6 -8 -10 -12 DB(|S(1,1)|) sp_6V1440mA_25C -14 -16 DB(|S(1,1)|) sp_6V1440mA_n40C -18 DB(|S(1,1)|) sp_6V1440mA_85C -20 8 9 10 11 12 13 14 15 16 17 Frequency (GHz) 18 19 20 21 22 S11(dB) over temperature P-3 over temperature 0 -2 -4 S22 (dB) -6 -8 -10 -12 -14 DB(|S(2,2)|) sp_6V1440mA_25C -16 DB(|S(2,2)|) sp_6V1440mA_n40C -18 DB(|S(2,2)|) sp_6V1440mA_85C -20 8 9 10 11 12 13 14 15 16 17 Frequency (GHz) 18 S22(dB) over Voltage MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 7 of 14, Updated July 2017 19 20 21 22 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Typical Power Detector Voltages: Vds=6V, Idsq=1.4A, Frequency=13GHz Detector Voltages (DET_O and DET_R) vs. Output RF power Vdelta axis is Log-scale. +5V 100KΩ 100KΩ 10KΩ 10KΩ DET_O +5V DET_R Vout=DET_R – DET_O 10KΩ + 10KΩ -5V MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 8 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Applications The MMA-121633-R5 MMIC power amplifier is designed for use as a power stage amplifier in microwave transmitters. It is ideally suited for 12.7 to 15.4GHz band point to point radio applications requiring a flat gain response and excellent linearity performance. This amplifier is provided as a 5x5mm QFN package, and the packaged amplifier is fully compatible with industry standard high volume surface mount PCB assembly processes. Biasing and Operation The recommended bias conditions for best performance for the MMA-121633-R5 are VDD = 6.0V, Idsq = 1400mA. Performance improvements are possible depending on applications. The drain bias voltage range is 4 to 6V and the quiescent drain current biasing range is 1200mA to 2500mA. A single DC gate supply connected to Vg will bias all the amplifier stages. Muting can be accomplished by setting Vg to the pinch-off voltage (Vp=-2V). The gate voltage (Vg) should be applied prior to the drain voltages (Vd1, Vd2, and Vd3) during power up and removed after the drain voltages during power down. The RF input port is connected internally to the ground for ESD protection purpose; therefore, an input decoupling capacitor is needed if the preceding output stage has DC present. The RF output is DC decoupled internally. Typical DC supply connection with bi-passing capacitors for the MMA-121633-R5 is shown in following pages. MMA-121633-R5 contains optional temperature compensated output power detectors. Typical detection voltage vs. output power is shown in previous page. To obtain over temperature compensation, a recommended differential amplifier is required. Assembly Techniques GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 9 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Package Pin-out: Pin 4 21 10 31 28 15, 26 18 23 1, 3, 5, 8 ,9, 16, 17, 20, 22, 24, 25, 32, 33 2, 6, 7, 11, 12, 13, 14, 19, 27, 29, 30 Description RF Input RF Output Vg Vd1 Vd2 Vd3 DET_Rreference DET_Output Ground N/C MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 10 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Mechanical Information: The units are in [mm]. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 11 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Application Circuit: Vd2 Vd1 Vd3 1uF DET_O 1uF 1uF 10Ω 10Ω 10Ω 0.01u 0.01u 25 26 27 28 29 30 6 19 7 18 8 17 RF Output GND RF OUT GND 16 20 15 5 14 21 13 22 4 9 GND 23 3 12 RF IN 24 2 11 GND 1 10 RF Input 31 32 0.01u 10Ω 10Ω 0.01u 10Ω 0.01u 0.01u 1uF 1uF Note: Vd3 pins must be biased from both sides. Vg Vd3 DET_R MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 12 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Recommended Application Board Design: Board Material is 10mil (Dielectric) thickness Rogers 4350B with 0.5oz cupper clads. Board is soldered on a gold plated solid cupper block and adequate heat-sinking is required for 16.8W total power dissipation. Vd1 Vd2 C1 C2 DET_O Vd3 C3 R2 C7 C6 R3 R1 C8 RF IN RF OUT C4 R5 R4 C10 C9 C5 Vg Part C1, C2, C3, C4, C5 C6, C7, C8, C9, C10 R1, R2, R3, R4, R5 Vd4 DET_R Description 1uF capacitor (0603) 0.01uF Capacitor (0402) 10Ω Resistor (0402) MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 13 of 14, Updated July 2017 MMA-121633-R5 12.5-15.5GHz, 2W Power Amplifier Data Sheet Recommended Application Board Design: Board Material is 10mil (Dielectric) thickness Rogers 4350B with 0.5oz cupper clads. The board material and mounting pattern, as defined in the data sheet, optimizes RF performance and is strongly recommended. An electronic drawing of the land pattern is available upon request from MwT Sales & Application Engineering. MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 14 of 14, Updated July 2017
MMA-121633-R5EVB
物料型号:MMA-121633-R5

器件简介: - MMA-121633是一款基于砷化镓(GaAs) MMIC的线性功率放大器,具有2瓦特的输出功率和在12.5至15.5GHz全频率范围内的高增益。该放大器针对5dB回退条件下的高线性应用进行了优化设计。

引脚分配: - RF输入:引脚4 - RF输出:引脚21 - 栅极电压(Vg):引脚10 - 漏极电压(Vd1, Vd2, Vd3):引脚31, 28, 15, 26 - 检测输出(DET_Output):引脚23 - 检测参考(DET_Rreference):引脚18 - 接地:引脚1, 3, 5, 8, 9, 16, 17, 20, 22, 24, 25, 32, 33

参数特性: - 工作频率范围:12.5 – 15.5 GHz - 增益:典型值23.5 dB,最小值22 dB - 输出1dB点(P1dB):典型值32 dBm,最小值31 dBm - 三阶交调(IM3)水平:在20 dBm/tone时为-44 dBc - 工作电流(Ids):1200到2500 mA - 电源电压(Vdd):4到6 V

功能详解: - 该放大器集成了射频功率检测器,并且采用表面贴装QFN 5x5mm封装。适用于通信系统、微波仪器和点对点无线电系统。

应用信息: - 该放大器适用于12.7至15.4GHz频段的点对点无线电应用,这些应用需要平坦的增益响应和出色的线性性能。

封装信息: - 封装类型:QFN - 封装尺寸:5x5mm

绝对最大额定值: - 漏源电压(Vds):最高6.5V - 栅源电压(Vg):-2.1V至0V - 栅电流(Ig):-17mA至17mA - 功率耗散(Pd):最高16.8W - 工作温度(Toper):-40至+85°C - 存储温度(Tstg):-55至+150°C - 最大组装温度(Tmax):最高+250°C(20秒最大)
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