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RSS08065A

RSS08065A

  • 厂商:

    REASUNOS(瑞森半导体)

  • 封装:

    TO-220-2

  • 描述:

    肖特基二极管 VR=650V IF=31A IR=200μA CT=530pF TO220-2

  • 详情介绍
  • 数据手册
  • 价格&库存
RSS08065A 数据手册
RSS08065A Silicon Carbide Schottky Diode VRRM IF ( TC≤135℃) QC 650V 11A 23nC Applications: • Switch Mode Power Supplies • Power Factor Correction • Motor drive, PV Inverter, Wind Power Station Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Positive Temperature Coefficient on VF • Temperature-independent Switching • 175°C Operating Junction Temperature Benefits: • Replace Bipolar with Unipolar Device • Reduction of Heat Sink Size • Parallel Devices Without Thermal Runaway • Essentially No Switching Losses Ordering Information Part Number Package Marking Packing Qty. RSS08065A TO-220-2 RSS08065A Tube 50 PCS www.reasunos.com 1 /6 Copyright Reasunos RSS08065A Silicon Carbide Schottky Diode Maximum Ratings(TJ= 25℃ unless otherwise specified) Symbo Parameter l Valu e Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V TC = 25℃ VRSM Surge Peak Reverse Voltage 650 V TC = 25℃ VR DC Blocking Voltage 650 V TC = 25℃ IF Forward Current 25 11 8 A IFSM Non-Repetitive Forward Surge Current 76 68 A IFRM Repetitive Peak Forward Surge Current 67 A Ptot Power Dissipation 100 W TC Maximum Case Temperature 154 ℃ TJ,TST G Operating Junction and Storage Temperature -55 to17 5 ℃ Not e TC ≤ 25℃ TC ≤ 135℃ TC ≤ 154℃ TC = 25℃, tp = 10ms, Half Sine Wave TC = 110℃, tp = 10ms, Half Sine Wave TC = 25℃, tp = 10ms, Half Sine Wave TC = 25℃ Fig. 3 Fig. 4 Electrical Characteristics (TJ= 25℃ unless otherwise specified) Symbo Parameter l Typ. VF Forward Voltage 1.39 1.74 Max . 1.6 - IR Reverse Current 6 12 60 - C Total Capacitance 338 44 43 QC Total Capacitive Charge 23 Ec Capacitance Stored Energy 3.7 Unit Test Conditions Note IF = 8A, TJ = 25℃ IF = 8A, TJ = 175℃ Fig.1 µA VR = 650V, TJ = 25℃ VR = 650V, TJ = 175℃ Fig.2 / pF VR = 1V, TJ = 25℃, f = 1MHz VR = 200V, TJ = 25℃, f = 1MHz Fig.5 VR = 400V, TJ = 25℃, f = 1MHz / nC VR =400V, Fig.6 uJ VR =400V, Fig.7 V Thermal Characteristics (TJ= 25℃ unless otherwise specified) Symbol Parameter Typ. Unit Note RθJC Thermal Resistance from Junction to Case 1.495 ℃/W Fig.8 www.reasunos.com 2 /6 Copyright Reasunos RSS08065A Silicon Carbide Schottky Diode Typical Feature Curve www.reasunos.com 3 /6 Copyright Reasunos RSS08065A Silicon Carbide Schottky Diode www.reasunos.com 4 /6 Copyright Reasunos RSS08065A Silicon Carbide Schottky Diode Package outline drawing(TO-220 Unit: mm ) www.reasunos.com 5 /6 Copyright Reasunos RSS08065A Silicon Carbide Schottky Diode Disclaimers: Reasunos Semiconductor Technology Co.Ltd (Reasunos) reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of orderacknowledgement. Reasunos Semiconductor Technology Co.Ltd warrants performance of its hardware products to the speciffications at the time of sale.Testing,reliability and quality control are used to the extene Reasunos deems necessary to support this warrantee. Except where agreed upon by contr- actual agreement,testing of all parameters of each product is not necessarily performed. Reasunos Semiconductor Technology Co.Ltd does not assume any liability arising from the use of any product or circuit designs described herein.Customers are responsible for their products and applications using Reasunos's components.To minimize risk,customers must provide adequate design and operating safeguards. Reasunos Semiconductor Technology Co.Ltd does not warrant or convey any license eith- er expressed or implied under its patent rights,nor the rights of others.Reproduction of inform- ation in Reasunos's data sheeets or data books is permissible only if reproduction is without modification oralteration.Reproduction of this information with any alteration is an unfair and deceptive business practice. Reasunos Semiconductor Technology Co.Ltd is not responsi- ble or liable for such altered documentation. Resale of Reasunos's products with statements different from or beyond the parameters stated by Reasunos Semiconductor Technology Co.Ltd for that product or service voids all exp- ress or implied warrantees for the associated Reasunos's product or service and is unfair and deceptive business practice. Reasunos Semiconductor Technology Co.Ltd is not responsi- ble or liable for such statements. Life Support Policy: Reasunos Semiconductor Technology Co.Ltd's Products are not authorized for use as cri- tical components in life support devices or systems without the expressed written approval of Reasunos Semiconductor Technology Co.Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a.are intended for surgical implant into the human body, b.support or sustain life, c.whose failuer to when properly used in accordance with instructions for used provided in the laeling,can be reasonably expected to result in significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness. www.reasunos.com 6 /6 Copyright Reasunos
RSS08065A
物料型号:RSS08065A 器件简介:瑞森半导体生产的SiC肖特基二极管,具有零反向恢复电流、零正向恢复电压、正向电压温度系数、温度无关的开关特性。

引脚分配:1号引脚为阳极,2号引脚为阴极。

参数特性:重复峰值反向电压VRRM 650V,正向电流IF 11A@Tc=135°C,电容电荷QC 23nC。

功能详解:该二极管适用于开关电源、功率因数校正、电机驱动、光伏逆变器、风力发电等应用,具有零反向恢复电流、零正向恢复电压、正向电压温度系数、温度无关的开关特性。

应用信息:适用于开关电源、功率因数校正、电机驱动、光伏逆变器、风力发电站等。

封装信息:TO-220-2封装,标记为RSS08065A,每管装50PCS。
RSS08065A 价格&库存

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RSS08065A
  •  国内价格
  • 1+5.83794
  • 10+4.94532
  • 50+4.46310
  • 100+3.90906
  • 500+3.67308
  • 1000+3.56022

库存:119

RSS08065A
  •  国内价格
  • 1+4.31600
  • 10+3.98400
  • 30+3.91760
  • 100+3.71840

库存:0