RS10N65D

RS10N65D N Channel MOSFET ID RDS(ON)(Typ ) VDSS 10A 0.93Ω 650V Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability Ordering Information Part Number Package Marking Packing Qty. RS10N65D T0-252 RS10N65D Tape&reel 2500 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS10N65D Units V VDSS Drain-to-Source Voltage 650 ID Continuous Drain Current TC=25℃ 10 IDM Pulsed Drain Current (Note*1) 28 PD Power Dissipation 179 W VGS Gate- to- Source Voltage ±30 V EAS Single Pulse Avalanche Engergy L = 10mH, VDD = 50V, RG = 25 Ω 217 mJ A Maximum Temperature for Soldering 300 260 Leads at 0.063in(1.6mm)from Case for 10 seconds ℃ Package Body for 10 seconds TJ and Operating Junction and Storage -55 to 150 TSTG Temperature Range * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause permanent damage to the device. TL TPKG www.reasunos.com 1 /9 Copyright Reasunos RS10N65D N Channel MOSFET Thermal Resistance Symbol RθJC Parameter RS10N65D Junction-to-Case Units Test Conditions Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of + 1 5 0 ℃ 0.7 ℃/ W RθJA Junction-toAmbient 62.5 1 cubic foot chamber,free air. OFF Characteristics TJ= 25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Test Conditions 650 -- -- V VGS=0V,ID=250µA µA VDS=650V,VGS=0 V BVDSS Drain- to- source Breakdown Voltage IDSS Drain- to- Source Leakage Current -- -- 1 Gate- to- Source Forward Leakage -- -- 100 Gate- to- Source Reverse Leakage -- -- -100 Min. Typ. Max. Units IGSS nA VGS=30V ,VDS=0V VGS=-30V ,VDS=0 V ON Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Test Conditions RDS(on) Static Drain- to- Source OnResistance(Note*2) -- 0.93 1.05 Ω VGS=10V,ID=5A VGS(TH) Gate Threshold Voltage 3 -- 4 V VGS=VDS,ID=250µ A Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. td(ON) Turn- on Delay Time -- 43 -- trise Rise Time -- 16.5 -- td(OFF) Turn- OFF Delay Time -- 125 -- tfall Fall Time -- 37 -- www.reasunos.com 2 /9 Units nS Test Conditions VDS=325V ID=10A RG=25Ω Copyright Reasunos RS10N65D N Channel MOSFET Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Units Test Conditions Ciss Input Capacitance -- 1246 -- Coss Output Capacitance -- 104 -- pF VGS=0V VDS=25V f=1.0MHz Crss Reverse Transfer Capacitance -- 0.5 -- Qg Total Gate Charge -- 22 -nC VDS=520V ID=10A VGS=10V Qgs Gate- to- Source Charge -- 6 -- Qgd Gate-to-Drain(" Miller") Charge -- 8 -- Min. Typ. Max. Units Test Conditions Source- Drain Diode Characteristics Symbol Parameter IS Continuous Source Current -- -- 10 A ISM Maximum Pulsed Current -- -- 40 A Integral pn- diode in MOSFET VSD Diode Forward Voltage -- -- 1.4 V IS=5A,VGS=0V trr Reverse Recovery Time -- 360 -- nS Qrr Reverse Recovery Charge -- 3.9 -- µC VGS=0V IS=10A,di/dt=100A /µs Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% www.reasunos.com 3 /9 Copyright Reasunos RS10N65D N Channel MOSFET Typical Feature Curve www.reasunos.com 4 /9 Copyright Reasunos RS10N65D N Channel MOSFET www.reasunos.com 5 /9 Copyright Reasunos RS10N65D N Channel MOSFET Test Circuits and Waveforms www.reasunos.com 6 /9 Copyright Reasunos RS10N65D N Channel MOSFET Test Circuits and Waveforms www.reasunos.com 7 /9 Copyright Reasunos RS10N65D N Channel MOSFET Package outline drawing(TO-252 Unit: mm ) 尺寸 尺寸 符号 W 尺寸 符号 Min Max 6.50 6.70 W1 (4.572) 符号 Min Max Min Max L1 0.80 1.20 T1 0.48 0.58 L2 0.60 1.00 T2 0.95 1.15 W2 0.6 0.8 L3 9.70 10.30 T3 0.48 0.58 W3 0.68 0.88 L4 1.30 1.70 T4 0.00 0.12 0 0 8 W4 L (5.3) 6.00 www.reasunos.com L5 6.20 T (5.20) 2.20 8 /9 2.40 Copyright Reasunos RS10N65D N Channel MOSFET Disclaimers: Reasunos Semiconductor Technology Co.Ltd (Reasunos) reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of orderacknowledgement. 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