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RS13N50F

RS13N50F

  • 厂商:

    REASUNOS(瑞森半导体)

  • 封装:

    TO220F-3

  • 描述:

    MOS管 N-Channel VDS=500V VGS=±30V ID=13A RDS(ON)=0.39Ω TO220F-3

  • 数据手册
  • 价格&库存
RS13N50F 数据手册
RS13N50F N Channel MOSFET ID RDS(ON)(Typ ) VDSS 13A 0.39Ω 500V Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability Ordering Information Part Number Package Marking Packing Qty. RS13N50F T0-220F RS13N50F Tube 50 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS13N50F Units V VDSS Drain-to-Source Voltage 500 ID Continuous Drain Current TC=25℃ 13 IDM Pulsed Drain Current (Note*1) 52 PD Power Dissipation 49 W VGS Gate- to- Source Voltage ±30 V EAS Single Pulse Avalanche Engergy L = 10mH, VDD = 50V, RG = 25 Ω 352 mJ A Maximum Temperature for Soldering TL TPKG TJ and TSTG 300 260 Leads at 0.063in(1.6mm)from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range ℃ -55 to 150 * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause permanent damage to the device. www.reasunos.com 1 /9 Copyright Reasunos RS13N50F N Channel MOSFET Thermal Resistance Symbol RθJC RθJA Parameter RS13N50F Junction-to-Case Junction-toAmbient Units Test Conditions ℃/ W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of + 1 5 0 ℃ 2.55 62.5 1 cubic foot chamber,free air. OFF Characteristics TJ= 25℃ unless otherwise specified Symbol BVDSS IDSS IGSS Parameter Min. Typ. Max. Units 500 -- -- V -- -- 1 µA -- -- 100 -- -- -100 Min. Typ. Max. Units Static Drain- to- Source OnResistance(Note*2) -- 0.39 0.46 Ω Gate Threshold Voltage 3 -- 4 V Drain- to- source Breakdown Voltage Drain- to- Source Leakage Current Gate- to- Source Forward Leakage Gate- to- Source Reverse Leakage nA Test Conditions VGS=0V,ID=250µ A VDS=500V,VGS= 0V VGS=30V ,VDS=0 V VGS=-30V ,VDS= 0V ON Characteristics TJ=25℃ unless otherwise specified Symbol RDS(on) VGS(TH ) Parameter Test Conditions VGS=10V,ID=6.5 A VGS=VDS,ID=25 0µA Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. td(ON) Turn- on Delay Time -- 43.2 -- trise Rise Time -- 24.8 -- td(OFF) Turn- OFF Delay Time -- 131. 8 -- tfall Fall Time -- 42.6 -- www.reasunos.com 2 /9 Units nS Test Conditions VDS=250V ID=13A RG=25Ω Copyright Reasunos RS13N50F N Channel MOSFET Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Units Test Conditions Ciss Input Capacitance -- 1569 -pF VGS=0V VDS=25V f=1.0MHz Coss Output Capacitance -- 171 -- Crss Reverse Transfer Capacitance -- 5 -- Qg Total Gate Charge -- 30.9 -- Qgs Gate- to- Source Charge -- 7.8 -- nC VDS=400V ID=13A VGS=10V Qgd Gate-to-Drain(" Miller") Charge -- 10.6 -- Min. Typ. Max. Units Test Conditions Source- Drain Diode Characteristics Symbol Parameter IS Continuous Source Current -- -- 13 A ISM Maximum Pulsed Current -- -- 52 A Integral pn- diode in MOSFET VSD Diode Forward Voltage -- -- 1.4 V IS=6.5A,VGS=0V trr Reverse Recovery Time -- 307 -- nS Qrr Reverse Recovery Charge -- 3.5 -- µC VGS=0V IS=13A,di/dt=100 A/µs Notes: * 1. Repetitive rating,pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% www.reasunos.com 3 /9 Copyright Reasunos RS13N50F N Channel MOSFET Typical Feature Curve www.reasunos.com 4 /9 Copyright Reasunos RS13N50F N Channel MOSFET www.reasunos.com 5 /9 Copyright Reasunos RS13N50F N Channel MOSFET Test Circuits and Waveforms www.reasunos.com 6 /9 Copyright Reasunos RS13N50F N Channel MOSFET Test Circuits and Waveforms www.reasunos.com 7 /9 Copyright Reasunos RS13N50F N Channel MOSFET Package outline drawing(TO-220F Unit: mm ) www.reasunos.com 8 /9 Copyright Reasunos RS13N50F N Channel MOSFET Disclaimers: Reasunos Semiconductor Technology Co.Ltd (Reasunos) reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of orderacknowledgement. Reasunos Semiconductor Technology Co.Ltd warrants performance of its hardware products to the speciffications at the time of sale.Testing,reliability and quality control are used to the extene Reasunos deems necessary to support this warrantee. Except where agreed upon by contr- actual agreement,testing of all parameters of each product is not necessarily performed. Reasunos Semiconductor Technology Co.Ltd does not assume any liability arising from the use of any product or circuit designs described herein.Customers are responsible for their products and applications using Reasunos's components.To minimize risk,customers must provide adequate design and operating safeguards. Reasunos Semiconductor Technology Co.Ltd does not warrant or convey any license eith- er expressed or implied under its patent rights,nor the rights of others.Reproduction of inform- ation in Reasunos's data sheeets or data books is permissible only if reproduction is without modification oralteration.Reproduction of this information with any alteration is an unfair and deceptive business practice. Reasunos Semiconductor Technology Co.Ltd is not responsi- ble or liable for such altered documentation. Resale of Reasunos's products with statements different from or beyond the parameters stated by Reasunos Semiconductor Technology Co.Ltd for that product or service voids all exp- ress or implied warrantees for the associated Reasunos's product or service and is unfair and deceptive business practice. Reasunos Semiconductor Technology Co.Ltd is not responsi- ble or liable for such statements. Life Support Policy: Reasunos Semiconductor Technology Co.Ltd's Products are not authorized for use as cri- tical components in life support devices or systems without the expressed written approval of Reasunos Semiconductor Technology Co.Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a.are intended for surgical implant into the human body, b.support or sustain life, c.whose failuer to when properly used in accordance with instructions for used provided in the laeling,can be reasonably expected to result in significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness. www.reasunos.com 9 /9 Copyright Reasunos
RS13N50F 价格&库存

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RS13N50F
  •  国内价格
  • 1+1.66400
  • 10+1.53600
  • 30+1.51040
  • 100+1.43360

库存:0