RS30N100D

RS30N100D Lead Free Package and Finish N-Channel Trench Power MOSFET General Description The RS30N100D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features ● VDS = 30V,ID =100A RDS(ON) < 4mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● ● ● TO-252(DPAK) top view PWM applications Load switch Power management 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity RS30N100D RS30N100D TO-252 325mm 16mm 2500 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 30 V VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(T c=25℃) 100 A Drain Current-Continuous(T c=100℃) 70 A Drain Current-Continuous@ Current-Pulsed (Note 1) 400 A Maximum Power Dissipation(T c=25℃) 88 W Maximum Power Dissipation(T c=100℃) 44 W Avalanche energy (Note 2) 320 mJ -55 To 175 ℃ ID IDM (pluse) PD EAS TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 2.EAS condition: T J=25℃,VDD=20V,VG=10V, RG=25Ω Table 2. Thermal Characteristic Symbol Parameter RJC Thermal Resistance, Junction-to-Case Copyright Reasunos http://www.reasunos.com Typ Max Unit - 1.7 ℃/W REV:A5 Apr.2019 Page 1 of 7 RS30N100D Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,V GS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 2.5 V VGS(th) gFS RDS(ON) Forward Transconductance Drain-Source On-State Resistance 30 1 V 1.5 VDS=5V,ID=15A 30 S VGS=10V, ID=20A 3.1 4 mΩ VGS=5V, ID=15A 4.2 7 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2600 pF 412 pF 300 pF 3.3 Ω 13 nS 16 nS Turn-Off Delay Time 40 nS tf Turn-Off Fall Time 14 nS Qg Total Gate Charge 58 nC Q gs Gate-Source Charge 7 nC Qgd Gate-Drain Charge 18 nC VDS=15V,VGS=0V, f=1.0MHz VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, VDS=15V, RL=0.75,RGEN=3 VGS=10V, VDS=15V, ID=14A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage(Note 1) VGS=0V,IS=20A 100 A 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 2 of 7 RS30N100D Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 3 of 7 RS30N100D TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 2. Transfer Characteristics Id (A) Id (A) Figure 1. Output Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 4. Drain Current Id (A) Normalized BVDSS Figure 3. Max BVDSS vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 6. RDS(ON) vs Junction Temperature Normalized Vth Normalized Rdson Figure 5. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) Copyright Reasunos http://www.reasunos.com TJ-Junction Temperature(℃) REV:A5 Apr.2019 Page 4 of 7 RS30N100D Figure 8. Capacitance Vgs (V) C Capacitance(pF) Figure 7. Gate Charge Waveforms Qg(nC) VDS Drain-to-Source Voltage(V) Figure 10. Maximum Safe Operating Area Is (A) Id (A) Figure 9. Body-Diode Characteristics Vsd (V) VDS Drain-to-Source Voltage(V) R(t), Normalized Effective Transient Thermal Impedance Figure 11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 5 of 7 RS30N100D TO-252 Package Information Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 6 of 7 RS30N100D Disclaimers: Reasunos Semiconductor Technology CO.,LTD(Reasunos)reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of order acknowledgement. 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Life Support Policy: Reasunos Semiconductor Technology CO.,LTD's Products are not authorized for use as critical components in life support devices or systems without the expressed written approval of Reasunos Semiconductor Technology CO.,LTD. As used herein: 1.Life support devices or systems are devices or systems which: a.are intended for surgical implant into the human body, b.support or sustain life, c.whose failuer to when properly used in accordance with instructions for used provided in the laeling,can be reasonably expected to result in significant injury to the user. system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness. Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 7 of 7