RS30N86D

RS30N86D N Channel MOSFET ID RDS(ON)(Typ ) VDSS 86A 4.7mΩ 30V Applications: • Load Switch • PWM Applications • Power Managment Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability Ordering Information Part Number Package Marking Packing Qty. RS30N86D T0-252 RS30N86D Tape&reel 2500 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS30N86D Units V VDSS Drain-to-Source Voltage 30 ID Continuous Drain Current TC=25℃ 86 ID Continuous Drain Current TC=100℃ 50 IDM Pulsed Drain Current 170 PD Power Dissipation 83 W VGS Gate- to- Source Voltage ±20 V 306 mJ EAS Single Pulse Avalanche Engergy L = 0.5mH,VDD = 15V, RG = 25Ω, Tj = 25℃ Maximum Temperature for Soldering TL TPKG Leads at 0.063in(1.6mm)from Case for 10 seconds Package Body for 10 seconds TJ and Operating Junction and Storage TSTG Temperature Range A 300 260 ℃ -55 to 150 * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause permanent damage to the device. www.reasunos.com 1 /9 Copyright Reasunos RS30N86D N Channel MOSFET Thermal Resistance Symbol Parameter RS30N86D Units Test Conditions Drain lead soldered to water cooled RθJC Junction-to-Case 1.8 heatsink, PD adjusted for a peak junction temperature of + 1 5 0 ℃ ℃/ W RθJA Junction-toAmbient 60 1 cubic foot chamber,free air. OFF Characteristics TJ= 25℃ unless otherwise specified Symbol BVDSS IDSS IGSS Parameter Min. Typ. Max. Units Test Conditions 30 -- -- V VGS=0V,ID=250µA Drain- to- Source Leakage Current -- -- 1 µA VDS=30V,VGS=0V Gate- to- Source Forward Leakage -- -- 100 Gate- to- Source Reverse Leakage -- -- -100 Min. Typ. Max. Units -- 4.7 5.5 mΩ VGS=10V,ID=30A -- 7.8 11 mΩ VGS=4.5V,ID=24A 1.0 1.5 3.0 V Drain- to- source Breakdown Voltage VGS=20V ,VDS=0V nA VGS=-20V ,VDS=0 V ON Characteristics TJ=25℃ unless otherwise specified Symbol RDS(on) VGS(TH) Parameter Static Drain- to- Source OnResistance Gate Threshold Voltage Test Conditions VGS=VDS,ID=250µ A Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. td(ON) Turn- on Delay Time -- 20 -- trise Rise Time -- 15 -- td(OFF) Turn- OFF Delay Time -- 60 -- tfall Fall Time -- 10 -- www.reasunos.com 2 /9 Units nS Test Conditions VDS=10V ID=30A RG=2.7Ω VGS=10V Copyright Reasunos RS30N86D N Channel MOSFET Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Units Ciss Input Capacitance -- 2330 -- Coss Output Capacitance -- 460 -- Crss Reverse Transfer Capacitance -- 230 -- Qg Total Gate Charge -- 51 -- Qgs Gate- to- Source Charge -- 14 -- Qgd Gate-to-Drain(" Miller") Charge -- 11 -- Min. Typ. Max. Units Test Conditions VGS= 0V pF VDS=15V f=1.0MHz VDS= 10V nC ID=30A VGS=10V Source- Drain Diode Characteristics Symbol Parameter Test Conditions IS Continuous Source Current -- -- 86 A ISM Maximum Pulsed Current -- -- 170 A VSD Diode Forward Voltage -- -- 1.2 V IS=24A,VGS=0V trr Reverse Recovery Time -- 32 50 nS VGS=0V Qrr Reverse Recovery Charge -- 12 20 nC di/dt=100A/µs Integral pn- diode in MOSFET IS=80A Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% www.reasunos.com 3 /9 Copyright Reasunos RS30N86D N Channel MOSFET Typical Feature Curve www.reasunos.com 4 /9 Copyright Reasunos RS30N86D N Channel MOSFET www.reasunos.com 5 /9 Copyright Reasunos RS30N86D N Channel MOSFET Test ircuits and Waveforms www.reasunos.com 6 /9 Copyright Reasunos RS30N86D N Channel MOSFET Test ircuits and Waveforms www.reasunos.com 7 /9 Copyright Reasunos RS30N86D N Channel MOSFET Package outline drawing(TO-252 Unit: mm ) 尺寸 尺寸 符号 W 尺寸 符号 Min Max 6.50 6.70 W1 (4.572) 符号 Min Max Min Max L1 0.80 1.20 T1 0.48 0.58 L2 0.60 1.00 T2 0.95 1.15 W2 0.6 0.8 L3 9.70 10.30 T3 0.48 0.58 W3 0.68 0.88 L4 1.30 1.70 T4 0.00 0.12 0 0 8 W4 L (5.3) 6.00 www.reasunos.com L5 6.20 T (5.20) 2.20 8 /9 2.40 Copyright Reasunos RS30N86D N Channel MOSFET Disclaimers: Reasunos Semiconductor Technology Co.Ltd (Reasunos) reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of orderacknowledgement. 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