RSU4N65D

RSU4N65D Super Junction MOSFET ID RDS(ON)(Typ ) VDSS 4A 880mΩ 650V Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC-DC Switching Power Supply Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability Ordering Information Part Number Package Marking Packing Qty. RSU4N65D T0-252 RSU4N65D Tape&reel 2500 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified RSU4N65D Symbol Parameter VDSS Drain-to-Source Voltage ID Continuous Drain Current TC=25℃ 4 ID Continuous Drain Current TC=100℃ 2.5 IDM Pulsed Drain Current (Note*1) 12 PD Power Dissipation 37 W VGS Gate- to- Source Voltage ±30 V 80 mJ EAS 650 Single Pulse Avalanche Engergy L=10mH,VDS= 50V, RG = 25Ω，TC=25℃ Units V A dv/dt MOSFET dv/ dt ruggednessVDS = 0…400V 50 V/ns dv/dt Reverse diode dv/dt VDS = 0…400V, Tj = 25℃, ISD≤ID 15 V/ns Maximum Temperature for Soldering 300 Leads at 0.063in(1.6mm)from Case for 10 260 seconds ℃ Package Body for 10 seconds TJ and Operating Junction and Storage -55 to 150 TSTG Temperature Range * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause permanent damage to the device. TL TPKG www.reasunos.com 1 /8 Copyright Reasunos RSU4N65D Super Junction MOSFET Thermal Resistance Symbol RθJC RθJA Parameter RSU4N65D Junction-to-Case Junction-toAmbient Units Test Conditions ℃/ W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of + 1 5 0 ℃ 3.4 62 1 cubic foot chamber,free air. OFF Characteristics TJ= 25℃ unless otherwise specified Symbol BVDSS IDSS IGSS Parameter Drain- to- source Breakdown Voltage Drain- to- Source Leakage Current Gate- to- Source Forward Leakage Gate- to- Source Reverse Leakage Min. Typ. Max. Units 650 -- -- V -- -- 1 µA -- -- 100 -- -- -100 Min. Typ. Max. Units -- 880 1000 mΩ VGS=10V,ID=2A 2.5 -- 4 V VGS=VDS,ID=25 0µA nA Test Conditions VGS=0V,ID=250µ A VDS=650V,VGS= 0V VGS=30V ,VDS=0 V VGS=-30V ,VDS= 0V ON Characteristics TJ=25℃ unless otherwise specified Symbol RDS(on) VGS(TH ) Parameter Static Drain- to- Source OnResistance(Note*2) Gate Threshold Voltage Test Conditions Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. td(ON) Turn- on Delay Time -- 35 -- trise Rise Time -- 8 -- td(OFF) Turn- OFF Delay Time -- 62 -- tfall Fall Time -- 19 -- www.reasunos.com 2 /8 Units Test Conditions nS VDS=400V ID=2A RG=25Ω Copyright Reasunos RSU4N65D Super Junction MOSFET Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Units Test Conditions Ciss Input Capacitance -- 284 -pF VGS=0V VDS=100V f=1MHz Coss Output Capacitance -- 21 -- Crss Reverse Transfer Capacitance -- 9.5 -- Qg Total Gate Charge -- 8.7 -- Qgs Gate- to- Source Charge -- 1.2 -- nC VDS=520V ID=2A VGS=10V Qgd Gate-to-Drain(" Miller") Charge -- 3.7 -- Min. Typ. Max. Units Test Conditions Source- Drain Diode Characteristics Symbol Parameter IS Continuous Source Current -- -- 4 A ISM Maximum Pulsed Current -- -- 12 A Integral pn- diode in MOSFET VSD Diode Forward Voltage -- 0.85 1.2 V IS=2A,VGS=0V trr Reverse Recovery Time -- 112 -- nS Qrr Reverse Recovery Charge -- 0.51 -- µC VR=50V IS=2A,di/dt=100A /µs Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% www.reasunos.com 3 /8 Copyright Reasunos RSU4N65D Super Junction MOSFET Typical Feature Curve www.reasunos.com 4 /8 Copyright Reasunos RSU4N65D Super Junction MOSFET www.reasunos.com 5 /8 Copyright Reasunos RSU4N65D Super Junction MOSFET Test Circuits and Waveforms www.reasunos.com 6 /8 Copyright Reasunos RSU4N65D Super Junction MOSFET Package outline drawing(TO-252 Unit: mm ) 尺寸 尺寸 符号 W 尺寸 符号 Min Max 6.50 6.70 W1 (4.572) 符号 Min Max Min Max L1 0.80 1.20 T1 0.48 0.58 L2 0.60 1.00 T2 0.95 1.15 W2 0.6 0.8 L3 9.70 10.30 T3 0.48 0.58 W3 0.68 0.88 L4 1.30 1.70 T4 0.00 0.12 0 0 8 W4 L (5.3) 6.00 www.reasunos.com L5 6.20 T (5.20) 2.20 7 /8 2.40 Copyright Reasunos RSU4N65D Super Junction MOSFET Disclaimers: Reasunos Semiconductor Technology Co.Ltd (Reasunos) reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of orderacknowledgement. 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