RSU12N65F

RSU12N65F Multi-Epi Super Junction MOSFETs Lead Free Package and Finish Applications: RDS(ON)(Max.) ID 12A 420mΩ VDSS 650V RSU12N65F Units 650 12 7 44 31 ±30 V IDM PD VGS Drain-to-Source Voltage Continuous Drain Current (TC = 25℃) Continuous Drain Current (TC = 100℃) Pulsed Drain Current (Note*1) Power Dissipation(Tc=25℃) Gate-to-Source Voltage W V EAS Single Pulse Avalanche Engergy 120 mJ IAR Avalanche Current EAR Repetitive Avalanche Engergy •Switch Mode Power Supply(SMPS) •Uninterruptible Power Supply(UPS) •PFC stages for server & telecom •Consumer Features: •New revolutionary high voltage technology •Better RDS(on) in TO-220F •Ultra Low Gate Charge cause lower driving requirements •Periodic avalanche rated •Ultra low effective capacitances Ordering Information Not to Scale Part Number Package RSU12N65F TO-220F Marking RSU12N65F Absolute Maximun Ratings Tc=25℃ unless otherwise specified Symbol VDSS ID Parameter (Note*2) (Note*1) (Note*1) A 1.8 A 0.32 mJ Maximum Temperature for Soldering TL TPKG TJ and TSTG 300 260 Leads at 0.063in(1.6mm)from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range ℃ -55 to 150 *Drain Current Limited by Maximum Junction Temperature Caution:Stresses greater than those listed in the“Absolute Maximum Ratings”Table may cause permanent damage to the device. Thermal Resistance Symbol Parameter RSU12N65F RθJC Junction-to-Case 4 RθJA Junction-to-Ambient 78 Copyright Reasunos http://www.reasunos.com Units Test Conditions Drain lead soldered to water cooled heatsink,PD ℃/W REV:A6 Nov.2019 Adjusted for a peak junction temperature of +150℃. 1 cubic foot chamber,free air. Page 1 of 8 RSU12N65F OFF Characteristics TJ=25 ℃ unless otherwise specified Symbol BVDSS IDSS IGSS Parameter Min. Typ. Max. Units 650 -- -- V -- 650 -- V Drain-to-Source Leakage Current -- -- 1.0 µA Gate-to-Source Forward Leakage -- -- 100 Gate-to-Source Reverse Leakage -- -- -100 Drain-to-source Breakdown Voltage nA Test Conditions VGS = 0V, ID = 250µA, TJ= 25℃ VGS = 0V, ID = 250µA, TJ= 150℃ VDS=650V,VGS=0V VGS=+30V VDS=0V VGS=-30V VDS=0V ON Characteristics TJ=25 ℃ unless otherwise specified Symbol Parameter RDS(on) Static Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage gfs Transconductance Min. Typ. Max. Units -- 380 420 mΩ VGS=10V,ID=6A 3.5 4 4.5 V VGS=VDS,ID=250µA S VDS=20V,ID=6A 40 Test Conditions Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Units td(ON) Turn-on Delay Time -- 21 -- trise Rise Time -- 20 -- td(OFF) Turn-OFF Delay Time -- 51 tfall Fall Time -- 40 ns Test Conditions VDS=400V ID=6A RG=25Ω VGS=10V Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Units Ciss Input Capacitance -- 850 -- Coss Output Capacitance -- 35 -- Crss Reverse Transfer Capacitance -- 5 -- Qg Total Gate Charge -- 19 -- Qgs Gate-to-Source Charge -- 6 -- Qgd Gate-to-Drain("Miller"）Charge -- 6 -- Copyright Reasunos http://www.reasunos.com REV:A6 Nov.2019 Test Conditions pF VGS=0V VDS=100V f=1.0MHz nC VDS=520V ID=12A VGS=10V Page 2 of 8 RSU12N65F Source-Drain Diode Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current -- -- 12 A ISM Maximum Pulsed Current -- -- 44 A Integral pn-diode in MOSFET VSD Diode Forward Voltage -- 0.9 1.2 V IS=12A,VGS=0V Tj=25℃ trr Reverse Recovery Time -- 212 -- nS Qrr Reverse Recovery Charge -- 2.28 -- µC VR=400V,VGS=0V IS=12A,di/dt=100A/µs Notes: *1.Repetitive rating;pulse width limited by maximum junction temperature. *2. IAS = 1.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°CPulse width tp limited by Tj,max Typical Feature curve TJ=25℃, unless otherwise noted Copyright Reasunos http://www.reasunos.com REV:A6 Nov.2019 Page 3 of 8 RSU12N65F Copyright Reasunos http://www.reasunos.com REV:A6 Nov.2019 Page 4 of 8 RSU12N65F Copyright Reasunos http://www.reasunos.com REV:A6 Nov.2019 Page 5 of 8 RSU12N65F Test Circuits and Waveforms # # Copyright Reasunos http://www.reasunos.com REV:A6 Nov.2019 Page 6 of 8 RSU12N65F Package outline drawing Unit:mm Copyright Reasunos http://www.reasunos.com REV:A6 Nov.2019 Page 7 of 8 RSU12N65F Disclaimers: Reasunos Semiconductor Technology CO.,LTD(Reasunos)reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of order acknowledgement. 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Life Support Policy: Reasunos Semiconductor Technology CO.,LTD's Products are not authorized for use as critical components in life support devices or systems without the expressed written approval of Reasunos Semiconductor Technology CO.,LTD. As used herein: 1.Life support devices or systems are devices or systems which: a.are intended for surgical implant into the human body, b.support or sustain life, c.whose failuer to when properly used in accordance with instructions for used provided in the laeling,can be reasonably expected to result in significant injury to the user. system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness. Copyright Reasunos http://www.reasunos.com REV:A6 Nov.2019 Page 8 of 8