RS30P65D

RS30P65D Lead Free Package and Finish P-Channel Trench Power MOSFET General Description The RS30P65D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V. This device is suitable for use as a wide variety of applications. Features ● VDS = -30V,ID =-65A RDS(ON) < 9mΩ @ VGS =-10V RDS(ON) < 16mΩ @ VGS =-5V Schematic Diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● DC-DC converter ● Load switch ● Power management TO-252 top view 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package RS30P65D RS30P65D TO-252 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit -30 V ±25 V Drain Current-Continuous(Tc=25℃) -65 A Drain Current-Continuous(Tc=100℃) -45 A -260 A 500 mJ Maximum Power Dissipation(Tc=25℃) 83 W Maximum Power Dissipation(Tc=100℃) 41 W -55 To 175 ℃ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) EAS Drain Current-Continuous@ Current-Pulsed Avalanche energy (Note 1) (Note 2) PD TJ,TSTG Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol RJC Parameter Thermal Resistance,Junction-to-Case Copyright Reasunos http://www.reasunos.com Typ Max Unit -- 1.8 ℃/W REV:A5 Apr.2019 Page 1 of 6 RS30P65D Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA IDSS Zero Gate Voltage Drain Current VDS=-30V,VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=-250μA -1 -1.8 -3 V VDS=-5V,ID=-10A 20 28 VGS(th) gFS RDS(ON) Forward Transconductance -30 V S VGS=-10V, ID=-20A 7.1 9 mΩ VGS=-5V, ID=-15A 10 16 mΩ Drain-Source On-State Resistance Dynamic Characteristics Ciss Input Capacitance VDS=-15V,VGS=0V, f=1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance 3570 pF 435 pF 175 pF 16 nS 14 nS 50 nS Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VDD=-15V,ID=-1A,RL=15Ω VGS=-10V,RG=2.5Ω Turn-Off Delay Time tf Turn-Off Fall Time 22 nS Qg Total Gate Charge 58 nC Qgs Gate-Source Charge 9 nC Qgd Gate-Drain Charge 14 nC VGS=-10V, VDS=-15V, ID=-10A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-10A -50 A -1.2 V Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 2.EAS condition: TJ=25℃,VDD=30V,VG=-10V, RG=25Ω Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 2 of 6 RS30P65D Switch Time Test Circuit and Switching Waveforms： TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure2. Drain Current -ID Drain Current(A) Power Dissipation(W) Figure1. Power Dissipation TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure4. Transfer Characteristics -Id Drain Current（A） -Id Drain Current（A） Figure3. Output Characteristics -Vds Drain-Source Voltage (V) Copyright Reasunos http://www.reasunos.com -Vgs Gate-Source Voltage (V) REV:A5 Apr.2019 Page 3 of 6 RS30P65D Figure6. RDS(ON) vs Junction Temperature C Capacitance(pF) Figure5. Capacitance -VDS Drain-to-Source Voltage(V) Figure7. Max BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature Figure10. Maximum Safe Operating Area -Vgs (V) -Id（Amds） Figure9. Gate Charge Waveforms -Vds（Vlots） Qg(nC) Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 4 of 6 RS30P65D Figure11. Normalized Maximum Transient Thermal Impedance TO-252 Package Information Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 5 of 6 RS30P65D Disclaimers: Reasunos Semiconductor Technology CO.,LTD(Reasunos)reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of order acknowledgement. Reasunos Semiconductor Technology CO.,LTD warrants performance of its hardware products to the speciffications at the time of sale.Testing,reliability and quality control are used to the extene Reasunos deems necessary to support this warrantee. Except where agreed upon by contractual agreement,testing of all parameters of each product is not necessarily performed. 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As used herein: 1.Life support devices or systems are devices or systems which: a.are intended for surgical implant into the human body, b.support or sustain life, c.whose failuer to when properly used in accordance with instructions for used provided in the laeling,can be reasonably expected to result in significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness. Copyright Reasunos http://www.reasunos.com REV:A5 Apr.2019 Page 6 of 6