RS3400E

RS3400E 30V N-Channel MOSFET Product Summary V(BR)DSS RDS(on)MAX SOT-23 ID 35mΩ@10V 30V 40mΩ@4.5V 5.8A 52mΩ@2.5V Feature TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge Schematic diagram Application DC/DC Converter Load Switch for Portable Devices Battery Switch MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25 Parameter unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Pulsed Drain Current(1) IDM 30 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ -55~ +150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient(2) Copyright Reasunos http://www.reasunos.com REV:A0 AUG.2021 Page 1 of 6 MOSFET ELECTRICAL CHARACTERISTICS(Ta=25 Parameter Symbol RS3400E unless otherwise noted) Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS VDS=24V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS , ID =250µA Gate threshold voltage Drain-source on-resistance(3) RDS(on) Forward tranconductance gFS 30 VGS = 0V, ID=250µA V 0.7 1 µA ±0. 1 µA 1.4 V VGS =10V, ID =5.8A 27 35 VGS =4.5V, ID =5A 29 40 VGS =2.5V, ID =4A 38 52 S 8 VDS =5V, ID =5A mΩ Dynamic characteristics(4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg 1050 VDS =15V,VGS =0V,f =1MHz 99 pF 77 VDS=0V,VGS=0V, f =1MHz 3.6 Ω Switching Characteristics (4) td(on) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time 5 tr VGS=10V,VDS=15V, 7 td(off) RL=2.7Ω,RGEN=3Ω 40 ns 6 tf Source-Drain Diode characteristics VDS Diode Forward voltage(3) VGS =0V, IS=1A 1 V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Copyright Reasunos http://www.reasunos.com REV:A0 AUG.2021 Page 2 of 6 RS3400E Typical Electrical and Thermal Characteristics Output Characteristics 20 Transfer Characteristics 2.0 V DS =2V Pulsed Ta=25℃ V =2.5V,3V,4.5V,10V Pulsed GS 1.6 16 1.2 12 Ta=25℃ 0.8 V =2.0V 8 GS 0.4 4 0 0 1 2 3 4 5 0.0 0.0 RDS(ON) ID 0.5 1.0 1.5 2.0 2.5 RDS(ON) - VGS 150 Pulsed Ta=25℃ ID =5.8A Pulsed 125 55 50 3.0 GATE TO SOURCE VOLTAGE VGS (V) DRAIN TO SOURCE VOLTAGE VDS (V) 60 Ta=125℃ 100 45 V GS =2.5V 75 40 50 35 T a =125℃ V GS =4.5V 30 25 25 Ta =25℃ V =10V GS 0 5 10 15 20 0 0 DRAIN CURRENT ID (A) 10 IS - V SD 2 4 6 8 GATE TO SOURCE VOLTAGE VGS (V) 10 Threshold Voltage 2.0 Pulsed 1.5 1 Ta =125℃ I =-250uA 1.0 T a =25℃ D 0.1 0.5 0.01 0 .0 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) Copyright Reasunos 1.2 1.4 25 http://www.reasunos.com 50 75 100 125 JUNCTION TEMPERATURE Tj(℃ ) REV:A0 AUG.2021 Page 3 of 6 RS3400E SOT-23 Package Information L L1 D b e e1 Symbol Dimensions In Millimeters Min. Max. A 0.90 1.15 A1 0.00 0.10 A2 0.90 1.05 b 0.30 0.50 c 0.08 0.15 D 2.80 3.00 E 1.20 1.40 E1 2.25 2.55 0.95 REF. e e1 1.80 0.55 REF. L L1 Copyright Reasunos 2.00 0.30 http://www.reasunos.com 0.50 REV:A0 AUG.2021 Page 4 of 6 RS3400E SOT-23 Tape and Reel Copyright Reasunos http://www.reasunos.com REV:A0 AUG.2021 Page 5 of 6 RS3400E Disclaimers: Reasunos Semiconductor Technology CO.,LTD(Reasunos)reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of order acknowledgement. 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