RS3401E

RS3401E 30V P-Channel MOSFET Product Summary V(BR)DSS RDS(on)MAX SOT-23 ID 65mΩ@-10V -30V 75mΩ@-4.5V D -4.2A 90mΩ@-2.5V G Feature TrenchFET Power MOSFET Exceptional on-resistance and maximum DC current capability S Schematic diagram D Application DC/DC Converter Load Switch for Portable Devices Battery Switch MARKING: G S ABSOLUTE MAXIMUM RATINGS (Ta=25 Parameter unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient Copyright Reasunos http://www.reasunos.com REV:A0 AUG.2021 Page 1 of 6 MOSFET ELECTRICAL CHARACTERISTICS(Ta=25 Parameter Symbol RS3401E unless otherwise noted) Test Condition Min Type Max Unit Static Characteristics -30 V V(BR)DSS VGS = 0V, ID=-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA VGS(th) VDS =VGS , ID =-250µA -0.9 -1.3 V VGS=-10V, ID=-4.2A 50 65 VGS=-4.5V, ID=-4A 60 75 VGS =-2.5V, ID =-1A 70 90 VDS =-5V, ID =-4.2A 10 Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance(1) RDS(on) Forward tranconductance(1) gFS -0.7 mΩ S Dynamic characteristics(2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 954 VDS =-15V,VGS =0V,f =1MHz 115 pF 77 Switching characteristics(2) 6.3 td(on) Turn-on delay time Turn-on rise time tr td(off) Turn-off delay time VGS=-10V,VDS=-15V, 3.2 RL=3.6Ω,RGEN=6Ω 38.2 ns tf 12 IS -2 A Diode pulsed forward current ISM -25 A Diode Forward voltage( VDS -1.2 V Turn-off fall time Source-Drain Diode characteristics Diode forward current 1) VGS =0V, IS=-4.2A Notes: 1. Pulse test; pulse width≤300μs, duty cycle≤2%. 2. Guaranteed by design, not subject to production testing. Copyright Reasunos http://www.reasunos.com REV:A0 AUG.2021 Page 2 of 6 RS3401E Typical Electrical and Thermal Characteristics Output Characteristics -20 Transfer Characteristics -2.0 Ta=25℃ Pulsed V DS =-3V V GS=-3V,-4V,-5V,-6V,- 10V -15 Pulsed -1.5 V GS=-2.5V -10 Ta=125℃ -1.0 T =25℃ a VGS=-2V -5 0 -0.5 0 -1 -2 -3 0.0 0.0 -5 -4 DRAIN TO SOURCE VOLTAGE VDS(V) R DS(ON) 100 -0.5 -1.0 -1.5 -2.0 GATE TO SOURCE VOLTAGE VGS (V) ID RDS(ON) - VGS 180 Pulsed Ta=25℃ Pulsed ID =-4.2A 150 80 V GS =-2.5V 120 V =-4.5V GS 90 60 V =- 10V Ta =125℃ 60 GS Ta =25℃ 40 30 20 0 -2 -4 DRAIN CURRENT ID(A) IS- V -5 -6 -8 0 0 -2 -4 -6 -8 -10 GATE TO SOURCE VOLTAGE V GS (V) Threshold Voltage SD -1.5 Pulsed -1 -1.0 Ta=125℃ ID =-250uA - 0. 1 Ta=25℃ -0.5 - 0.01 -1E-3 0 .0 -0 .2 -0 .4 -0 .6 -0 .8 SOURCE TO DRAIN VOLTAGE V S(DV) -1 .0 - 1 .2 0.0 25 50 75 100 125 JUNCTION TEMPERATURE Tj (℃) 3 Copyright Reasunos http://www.reasunos.com REV:A0 AUG.2021 Page 3 of 6 RS3401E SOT-23 Package Information L1 D b e e1 Symbol Dimensions In Millimeters A Min. 0.90 Max. 1.15 A1 0.00 0.10 A2 0.90 1.05 b 0.30 0.50 c D 0.08 0.15 2.80 3.00 E 1.20 1.40 E1 2.25 2.55 0.95 REF. e Copyright Reasunos e1 L 1.80 L1 0.30 2.00 0.55 REF. http://www.reasunos.com 0.50 REV:A0 AUG.2021 Page 4 of 6 RS3401E SOT-23 Tape and Reel Copyright Reasunos http://www.reasunos.com REV:A0 AUG.2021 Page 5 of 6 RS3401E Disclaimers: Reasunos Semiconductor Technology CO.,LTD(Reasunos)reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of order acknowledgement. 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