RSM120080Z

RSM120080Z N-Channel SiC Power MOSFET VDS RDS(on) ID@25℃ 1200V 80mΩ 36A Applications: • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC Converters • EV Charging • Motor Drives Features: • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness Benefits: • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Ordering Information Part Number Package Marking Packing Qty. RSM120080Z TO-247-4 RSM120080Z Tube 30 PCS Maximum Ratings（TJ= 25℃ unless otherwise specified） Symbol Parameter VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage VGSop Gate - Source Voltage Value Unit 1200 V VGS=0V,ID =100μA V Absolute maximum values V Recommended operational values -10/+2 5 -5/+20 Test Conditions Continuous Drain 36 Current 24 ID(pulse) Pulsed Drain Current 80 A Pulse width tp limited by TJmax PD Power Dissipation 192 W TC =25℃, TJ =150℃ TL Solder Temperature 260 ℃ ID TJ, Tstg Operating Junction and -40 to StorageTemperature + 150 www.reasunos.com A Note VGS=18V, TC =25℃ VGS=18V, TC =100℃ ℃ 1 /8 Copyright Reasunos RSM120080Z N-Channel SiC Power MOSFET Electrical Characteristics （TJ= 25℃ unless otherwise specified） Symbol Parameter V(BR)D Drain-Source SS Breakdown Voltage VGS(th) IDSS IGSS RDS(on) Ciss Coss Crss EON Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source on-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Switching Energy Min. Typ. 120 2.0 2.4 V V Note VGS=0V,ID =100μA VGS= VDS, IDS=5mA, TC =25℃ VGS= VDS, IDS=5mA, TC =150℃ 100 μA VDS= 1200V, VGS=0V 10 250 nA VGS=25V, VDS= 0V 80 98 mΩ VGS=20V, ID =20A, TC =25℃ VGS=20V, ID =20A, 140 TC =150℃ 147 5 VGS=0V, VDS=1000 V, 94 pF f=1MHz，VAC=25 mV 11 VDS =800V, VGS =-5/20V, 564 td(on) Turn-On Delay Time 9.3 tr Rise Time 9.5 td(off) Turn-Off Delay Time 18 tf Fall Time 7.6 μJ ID = 20A, RG(ext) = 2.5Ω, L= 200μH VDS =800V, VGS =-5/20 V ns ID = 20A, RG(ext) =2. 5 Ω , RL =40Ω 3.1 Ω Qgs Gate to Source Charge 24 nC Qgd Gate to Drain Charge 15 nC Qg Total Gate Charge 79 www.reasunos.com Test Conditions 1 260 Resistance 4.0 1.8 Turn-Off Energy Internal Gate Unit V 0 EOFF RG(int) Max. 2 /8 f=1 MHz, VAC=25mV VDS=800V, VGS=-5/20V ID =20A Copyright Reasunos RSM120080Z N-Channel SiC Power MOSFET Reverse Diode Characteristics （TJ= 25℃ unless otherwise specified） Symbol VSD IS Parameter Typ. Max Unit 3.6 V 3.3 V Diode Forward Voltage Continuous Diode Forward 44 Current A trr Reverse Recovery time 35 ns Qrr Reverse Recovery Charge 91 nC 4.5 A Irrm Peak Reverse Recovery Current Test Conditions Note VGS=-5V, ISD = 10 A, TJ = 25℃ VGS=-5V, ISD= 10 A, TJ= 150℃ VGS=-5V,TC= 25℃ ISD= 20 A, VR = 800V Thermal Characteristics （TJ= 25℃ unless otherwise specified） Symbol Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.6 Unit Test Conditions Note ℃/W RθJA Thermal Resistance From Junction to Ambient www.reasunos.com 3 /8 40 Copyright Reasunos RSM120080Z N-Channel SiC Power MOSFET Typical Feature Curve www.reasunos.com 4 /8 Copyright Reasunos RSM120080Z N-Channel SiC Power MOSFET www.reasunos.com 5 /8 Copyright Reasunos RSM120080Z N-Channel SiC Power MOSFET www.reasunos.com 6 /8 Copyright Reasunos RSM120080Z N-Channel SiC Power MOSFET Package outline drawing(TO-247-4 Unit: mm ) www.reasunos.com 7 /8 Copyright Reasunos RSM120080Z N-Channel SiC Power MOSFET Disclaimers: Reasunos Semiconductor Technology Co.Ltd (Reasunos) reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of orderacknowledgement. Reasunos Semiconductor Technology Co.Ltd warrants performance of its hardware products to the speciffications at the time of sale.Testing,reliability and quality control are used to the extene Reasunos deems necessary to support this warrantee. Except where agreed upon by contr- actual agreement,testing of all parameters of each product is not necessarily performed. Reasunos Semiconductor Technology Co.Ltd does not assume any liability arising from the use of any product or circuit designs described herein.Customers are responsible for their products and applications using Reasunos's components.To minimize risk,customers must provide adequate design and operating safeguards. Reasunos Semiconductor Technology Co.Ltd does not warrant or convey any license eith- er expressed or implied under its patent rights,nor the rights of others.Reproduction of inform- ation in Reasunos's data sheeets or data books is permissible only if reproduction is without modification oralteration.Reproduction of this information with any alteration is an unfair and deceptive business practice. Reasunos Semiconductor Technology Co.Ltd is not responsi- ble or liable for such altered documentation. Resale of Reasunos's products with statements different from or beyond the parameters stated by Reasunos Semiconductor Technology Co.Ltd for that product or service voids all exp- ress or implied warrantees for the associated Reasunos's product or service and is unfair and deceptive business practice. Reasunos Semiconductor Technology Co.Ltd is not responsi- ble or liable for such statements. Life Support Policy: Reasunos Semiconductor Technology Co.Ltd's Products are not authorized for use as cri- tical components in life support devices or systems without the expressed written approval of Reasunos Semiconductor Technology Co.Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a.are intended for surgical implant into the human body, b.support or sustain life, c.whose failuer to when properly used in accordance with instructions for used provided in the laeling,can be reasonably expected to result in significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness. www.reasunos.com 8 /8 Copyright Reasunos