RSM1701K0W

RSM1701K0W N-Channel SiC Power MOSFET VDS RDS(on) ID@25℃ 1700V 1000mΩ 5A Applications: • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC Converters • EV Charging • Motor Drives Features: • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness Benefits: • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Ordering Information Part Number Package Marking Packing Qty. RSM1701K0W TO-247-3 RSM1701K0W Tube 30 PCS Maximum Ratings（TJ= 25℃ unless otherwise specified） Symbol Parameter Value Unit Test Conditions VDSmax Drain - Source Voltage 1700 V VGS=0V,ID =100μA VGSmax Gate - Source Voltage -10/+2 5 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current 5 3.5 A VGS=20V, TC =25℃ VGS=20V, TC =100℃ ID(pulse) Pulsed Drain Current 6 A Pulse width tp limited by TJmax PD Power Dissipation 69 W TC =25℃, TJ =150℃ TL Solder Temperature 260 ℃ TJ, Tstg Operating Junction and StorageTemperature -40 to + 150 ℃ www.reasunos.com 1 /8 Note Copyright Reasunos RSM1701K0W N-Channel SiC Power MOSFET Electrical Characteristics （TJ= 25℃ unless otherwise specified） Symbol Parameter Min. V(BR)D SS Drain-Source Breakdown Voltage 1700 VGS(th) IDSS IGSS RDS(on) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source on-state Resistance 2.5 Typ. 3.0 1 1000 V V Coss Output Capacitance 12 Note VGS=0V,ID =100μA VGS= VDS, IDS=1mA,TC =25℃ VGS= VDS, IDS=1mA,TC =150℃ μA VDS= 1700V, VGS=0V 250 nA VGS=25V, VDS= 0V 1300 mΩ VGS=20V, ID =2A, TC =25℃ VGS=20V, ID =2A, TC =150℃ VGS=0V, VDS=1000 V, pF f=1MHz，VAC=25 mV 1.6 48 μJ VDS =1200V, VGS =-5/20V,ID = 2A, RG(ext) = 2.5Ω, L= 1500μH ns VDS =1200V, VGS =-5/20 V ID = 2A, RG(ext) =2. 5 Ω , RL =600Ω f=1 MHz, VAC=25mV EOFF Turn-Off Energy 18 td(on) Turn-On Delay Time 5.2 tr Rise Time 9.4 td(off) Turn-Off Delay Time 13.2 tf Fall Time 22 RG(int) Internal Gate Resistance 22 Ω Qgs Gate to Source Charge 5.2 nC Qgd Gate to Drain Charge 7.3 nC Qg Total Gate Charge 21.8 www.reasunos.com Test Conditions 100 1500 186 EON 4.5 2.2 Input Capacitance Crss Unit V Ciss Reverse Transfer Capacitance Turn-On Switching Energy Max . 2 /8 VDS=1200V, VGS=-5/20V ID =2A Copyright Reasunos RSM1701K0W N-Channel SiC Power MOSFET Reverse Diode Characteristics （TJ= 25℃ unless otherwise specified） Symbol Parameter Typ. Max Unit Test Conditions 4.2 V VGS=-5V, ISD = 1 A, TJ = 25℃ 3.9 V VGS=-5V, ISD= 1 A, TJ= 150℃ A VGS=-5V,TC= 25℃ VSD Diode Forward Voltage IS Continuous Diode Forward Current trr Reverse Recovery time 25 ns Qrr Reverse Recovery Charge 15 nC Irrm Peak Reverse Recovery Current 2.8 A 4 Not e ISD= 2 A, VR = 1200V Thermal Characteristics （TJ= 25℃ unless otherwise specified） Symbol Parameter Typ. RθJC Thermal Resistance from Junction to Case 1.8 Unit Test Conditions Not e ℃/W RθJA Thermal Resistance From Junction to Ambient www.reasunos.com 3 /8 40 Copyright Reasunos RSM1701K0W N-Channel SiC Power MOSFET Typical Feature Curve www.reasunos.com 4 /8 Copyright Reasunos RSM1701K0W N-Channel SiC Power MOSFET www.reasunos.com 5 /8 Copyright Reasunos RSM1701K0W N-Channel SiC Power MOSFET www.reasunos.com 6 /8 Copyright Reasunos RSM1701K0W N-Channel SiC Power MOSFET Package outline drawing(TO-247-3 Unit: mm ) www.reasunos.com 7 /8 Copyright Reasunos RSM1701K0W N-Channel SiC Power MOSFET Disclaimers: Reasunos Semiconductor Technology Co.Ltd (Reasunos) reserves the right to make changes without notice in order to improve reliability,function or design and to discontinue any product or service without notice .Customers should obtain the latest relevant information before orders and should verify that such information in current and complete.All products are sold subject to Reasunos's terms and conditions supplied at the time of orderacknowledgement. 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