RS8N65F
N Channel MOSFET
ID
RDS(ON)(Typ )
VDSS
8A
0.95Ω
650V
Applications:
• Switch Mode Power Supply(SMPS)
• Uninterruptible Power Supply (UPS)
• Power Factor Correction (PFC)
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
Part Number
Package
Marking
Packing
Qty.
RS8N65F
T0-220F
RS8N65F
Tube
50 PCS
Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified
Symbol
Parameter
RS8N65F
Units
650
V
VDSS
Drain-to-Source Voltage
ID
Continuous Drain Current TC=25℃
8
IDM
Pulsed Drain Current (Note*1)
32
PD
Power Dissipation
35
W
VGS
Gate- to- Source Voltage
±30
V
EAS
Single Pulse Avalanche Engergy
L = 10mH, VDD = 50V, RG = 25 Ω
245
mJ
A
Maximum Temperature for Soldering
TL TPKG
TJ and
TSTG
300
260
Leads at 0.063in(1.6mm)from Case for 10
seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
℃
-55
to 150
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause
permanent damage to the device.
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RS8N65F
N Channel MOSFET
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-toAmbient
RS8N65F
Units
Test Conditions
℃/ W
Drain lead soldered to water cooled
heatsink, PD adjusted for a peak
junction temperature of + 1 5 0 ℃
1.95
62.5
1 cubic foot chamber,free air.
OFF Characteristics TJ= 25℃ unless otherwise specified
Symbol
BVDSS
IDSS
IGSS
Parameter
Min.
Typ.
Max.
Units
650
--
--
V
--
--
1
µA
--
--
100
--
--
-100
Min.
Typ.
Max.
Units
Static Drain- to- Source OnResistance(Note*2)
--
0.95
1.15
Ω
VGS=10V,ID=4A
Gate Threshold Voltage
3
--
4
V
VGS=VDS,ID=25
0µA
Drain- to- source Breakdown
Voltage
Drain- to- Source Leakage
Current
Gate- to- Source Forward
Leakage
Gate- to- Source Reverse
Leakage
nA
Test Conditions
VGS=0V,ID=250µ
A
VDS=650V,VGS=
0V
VGS=30V ,VDS=0
V
VGS=-30V ,VDS=
0V
ON Characteristics TJ=25℃ unless otherwise specified
Symbol
RDS(on)
VGS(TH
)
Parameter
Test Conditions
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
td(ON)
Turn- on Delay Time
--
39
--
trise
Rise Time
--
10
--
td(OFF)
Turn- OFF Delay Time
--
152
--
tfall
Fall Time
--
42
--
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Units
nS
Test Conditions
VDS=325V
ID=8A
RG=25Ω
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RS8N65F
N Channel MOSFET
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
Ciss
Input Capacitance
--
1110
-pF
VGS=0V
VDS=25V
f=1.0MHz
Coss
Output Capacitance
--
106
--
Crss
Reverse Transfer Capacitance
--
13
--
Qg
Total Gate Charge
--
37
--
Qgs
Gate- to- Source Charge
--
5
--
nC
VDS=520V
ID=8A
VGS=10V
Qgd
Gate-to-Drain(" Miller") Charge
--
24
--
Min.
Typ.
Max.
Units
Test Conditions
Source- Drain Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
--
--
8
A
ISM
Maximum Pulsed Current
--
--
32
A
Integral pn- diode
in MOSFET
VSD
Diode Forward Voltage
--
--
1.4
V
IS=4A,VGS=0V
trr
Reverse Recovery Time
--
601
--
nS
Qrr
Reverse Recovery Charge
--
2.3
--
µC
VGS=0V
IS=8A,di/dt=100A
/µs
Notes:
* 1. Repetitive rating, pulse width limited by maximum junction temperature.
* 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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RS8N65F
N Channel MOSFET
Typical Feature Curve
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RS8N65F
N Channel MOSFET
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RS8N65F
N Channel MOSFET
Test Circuits and Waveforms
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RS8N65F
N Channel MOSFET
Test Circuits and Waveforms
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RS8N65F
N Channel MOSFET
Package outline drawing(TO-220F Unit: mm )
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RS8N65F
N Channel MOSFET
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As used herein:
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be reasonably expected to result in significant injury to the user.
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