RS5N65D
N Channel MOSFET
ID
RDS(ON)(Typ )
VDSS
5A
1.8Ω
650V
Applications:
• Switch Mode Power Supply(SMPS)
• Adapter & Charger
• AC-DC Switching Power Supply
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
Part Number
Package
Marking
Packing
Qty.
RS5N65D
T0-252
RS5N65D
Tape&reel
2500 PCS
Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified
Symbol
Parameter
RS5N65D
Units
650
V
VDSS
Drain-to-Source Voltage
ID
Continuous Drain Current TC=25℃
5
IDM
Pulsed Drain Current (Note*1)
20
PD
Power Dissipation
90
W
VGS
Gate- to- Source Voltage
±30
V
105
mJ
EAS
Single Pulse Avalanche Engergy
L = 10mH, VDD = 50V, RG = 25 Ω
Maximum Temperature for Soldering
TL TPKG
Leads at 0.063in(1.6mm)from Case for 10 seconds
Package Body for 10 seconds
TJ and
Operating Junction and Storage
TSTG
Temperature Range
A
300
260
℃
-55 to 150
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause permanent
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damage to the device.
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RS5N65D
N Channel MOSFET
Thermal Resistance
Symbol
Parameter
RS5N65D
Units
Test Conditions
Drain lead soldered to water cooled
RθJC
Junction-to-Case
1.27
heatsink, PD adjusted for a peak
junction temperature of + 1 5 0 ℃
℃/ W
RθJA
Junction-toAmbient
62.5
1 cubic foot chamber,free air.
OFF Characteristics TJ= 25℃ unless otherwise specified
Symbol
BVDSS
IDSS
IGSS
Parameter
Min.
Typ.
Max.
Units
Test Conditions
650
--
--
V
VGS=0V,ID=250µA
Drain- to- Source Leakage Current
--
--
1
µA
Gate- to- Source Forward Leakage
--
--
100
Drain- to- source Breakdown
Voltage
Gate- to- Source Reverse Leakage
--
VDS=650V,VGS=0
V
VGS=30V ,VDS=0V
nA
VGS=-30V ,VDS=0
--
-100
Min.
Typ.
Max.
Units
Test Conditions
--
1.8
2.1
Ω
VGS=10V,ID=2.5A
3
--
4
V
V
ON Characteristics TJ=25℃ unless otherwise specified
Symbol
RDS(on)
VGS(TH)
Parameter
Static Drain- to- Source OnResistance(Note*2)
Gate Threshold Voltage
VGS=VDS,ID=250µ
A
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
td(ON)
Turn- on Delay Time
--
35
--
trise
Rise Time
--
8
--
td(OFF)
Turn- OFF Delay Time
--
60
--
tfall
Fall Time
--
25
--
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Units
Test Conditions
VDS=325V
nS
ID=5A
RG=25Ω
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RS5N65D
N Channel MOSFET
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Units
Ciss
Input Capacitance
--
665
--
Coss
Output Capacitance
--
64
--
Crss
Reverse Transfer Capacitance
--
6.5
--
Qg
Total Gate Charge
--
20
--
Qgs
Gate- to- Source Charge
--
3
--
Qgd
Gate-to-Drain(" Miller") Charge
--
11.5
--
Min.
Typ.
Max.
Units
Test Conditions
VGS=0V
pF
VDS=25V
f=1.0MHz
VDS=520V
nC
ID=5A
VGS=10V
Source- Drain Diode Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
--
--
5
A
ISM
Maximum Pulsed Current
--
--
20
A
VSD
Diode Forward Voltage
--
--
1.4
V
IS=2.5A,VGS=0V
trr
Reverse Recovery Time
--
320
--
nS
VGS=0V
Qrr
Reverse Recovery Charge
--
2.74
--
µC
Integral pn- diode
in MOSFET
IS=5A,di/dt=100A/
µs
Notes:
* 1. Repetitive rating, pulse width limited by maximum junction temperature.
* 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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RS5N65D
N Channel MOSFET
Typical Feature Curve
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RS5N65D
N Channel MOSFET
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RS5N65D
N Channel MOSFET
Test Circuits and Waveforms
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RS5N65D
N Channel MOSFET
Test Circuits and Waveforms
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RS5N65D
N Channel MOSFET
Package outline drawing(TO-252 Unit: mm )
尺寸
尺寸
符号
W
尺寸
符号
Min
Max
6.50
6.70
W1
(4.572)
符号
Min
Max
Min
Max
L1
0.80
1.20
T1
0.48
0.58
L2
0.60
1.00
T2
0.95
1.15
W2
0.6
0.8
L3
9.70
10.30
T3
0.48
0.58
W3
0.68
0.88
L4
1.30
1.70
T4
0.00
0.12
0
0
8
W4
L
(5.3)
6.00
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L5
6.20
T
(5.20)
2.20
8 /9
2.40
Copyright Reasunos
RS5N65D
N Channel MOSFET
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speciffications at the time of sale.Testing,reliability and quality control are used to the extene Reasunos
deems necessary to support this warrantee. Except where agreed upon by contr- actual
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product or circuit designs described herein.Customers are responsible for their products and applications
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Reasunos Semiconductor Technology Co.Ltd's Products are not authorized for use as cri- tical
components in life support devices or systems without the expressed written approval of Reasunos
Semiconductor Technology Co.Ltd.
As used herein:
1. Life support devices or systems are devices or systems which: a.are intended for surgical implant into
the human body, b.support or sustain life,
c.whose failuer to when properly used in accordance with instructions for used provided in the laeling,can
be reasonably expected to result in significant injury to the user.
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