DF06S

www.msksemi.com DF005S-DF10S Semiconductor Compiance Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique .205(5.2) .335(8.50) . 195(5.0) High temperature soldering guaranteed: 260°/ 10 seconds at 5 lbs., (2.3kg) tension Small size, simple installation .307(7.8) + High surge current capability . 09 3 ( 2 . 3 5 ) .047( 1.20) .035(0.9) (2 ) .402( 10.2) ( ) - .382(9.70) .255(6 .5 ) Mechanical Data .014(0.35) .245(6 .2 ) .008(0.20) Case : JEDEC DBS Molded plastic body Terminals : Solder plated, solderable per MIL- STD- 75 0 , Method 2026 Polarity : Polarity symbol marking on case Mounting Position : 45 . 118(3.0) .008(0.20) .002(0.05) .060( 1 .53) ( 4 ~) ( 3 ~) .040( 1.02) Dimensions in inches and ( millimeters) Any Weight : 0 .02 ounce, 0 .4 grams REEL SPECIFICATION P/N PKG QTY DF005S-DF10S DBS 1500 Maximum Ratings And Electrical Characteristics Ratings at 2 5 ° C ambient temperature unless otherwisespecified. Single phase half- wave 6 0 Hz, resistive or inductive load, for capacitive load current derate by 2 0 % . Parameter Marking Code Maximum repetitive Maximum RMS Maximum DC peak reverse voltage voltage blocking voltage Maximum average forward rectified current at TC=40°C SYMBOL S DF005S V RRM V RMS V DC DF01S DF02S DF04S 50 100 200 35 50 70 100 140 200 DF10S UNITS DF06S DF08S 400 600 800 1000 V 280 400 420 600 560 800 700 1000 V V IF(AV) 1.0 A IFSM 50 A VF 1.1 V IR 10 500 µA µA TJ T STG -55 to + 150 -55 to + 150 °C °C Peak forward surge current, 8. 3 ms single half sine- wave superimposed on rated load ( JEDEC Method) Maximum instantaneous forward voltage drop per leg at 1 A Maximum DC reverse current at rated DC blocking voltage Operating temperature TA=25°C TA=100°C range storage temperature range NOTES:DBS for surface mount package. www.msksemi.com DF005S-DF10S Semiconductor FIG. FIG . 2 - MAXIMUM 1 - MAXIMUN DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 60 1.0 0.6 ''( 1 .5mm ) REPETITIVE C opper Pa uls .51 '' x 51'' ( 1 3 mmx1 3 mm) PEAK FORWARD TJ= 2 5* Sin g le s i ne w ave ( JED EC Meth od) 50 0.8 0.6 NON- SURGE CURRENT Compiance 40 30 0.4 20 S in gle 0.2 Phase Ha l f Wave 6 0 R e s istive in d u ctive or Hz 10 Load 0 20 40 60 80 100 120 AMBIENT TEMPERATURE, FIG. 140 150 0 1 2 C 4 6 10 20 40 NUMBER OF CYCLES AT 6 0 3 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT FIG. 10 60 100 Hz 4 - TYPICAL FORWARD CHARACTERISTICS PER BRIDGE ELEMNT 100 TJ= 1 1 2 * 5 10 1 1.0 0.1 0.1 T .10 J=25* T J= 25 * PULSE WIDTH : 300 * S 1 % DUT Y CYCLE 0 .01 .01 0 20 40 60 80 100 120 140 0.01 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 FORWARD VOLTAGE, ( V) PERCENT OF RATED PEAK REVERSE VOLTAGE . ( % ) FIG. 3 - TYPICAL JUNCTION CAPACITANCE PER BRIDGE ELEMENT 100 10 T J = 25 * f= 1 . 0 M Z H Vi sg=5 0 mV p p 1 1 10 100 REVERSE VOLTAGE. ( V) The curve above is for reference only. www.msksemi.com DF005S-DF10S Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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