SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
Any frequency between 1 MHz and 80 MHz with 6 decimal places of
accuracy
Telecom clock synchronization, instrumentation
Low bandwidth analog PLL, jitter cleaner, clock recovery, audio
100% pin-to-pin drop-in replacement to quartz-based VCXO
Video, 3G/HD-SDI, FPGA, broadband and networking
Frequency stability as tight as ±10 ppm
Widest pull range options from ±25 ppm to ±1600 ppm
Industrial or extended commercial temperature range
Superior pull range linearity of ≤1%, 10 times better than quartz
LVCMOS/LVTTL compatible output
Four industry-standard packages: 2.5 mm x 2.0 mm (4-pin),
3.2 mm x 2.5mm (4-pin), 5.0 mm x 3.2 mm (6-pin), 7.0 mm x 5.0 mm
(6-pin)
Instant samples with Time Machine II and field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Electrical Specifications
Table 1. Electrical Characteristics[1, 2, 3]
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
1
–
80
MHz
Frequency Stability and Aging
Frequency Stability
Aging
Operating Temperature Range
F_stab
-10
–
+10
ppm
-25
–
+25
ppm
Inclusive of Initial tolerance[4] at 25 °C, and variation over
temperature, rated supply voltage and load.
-50
–
+50
ppm
F_aging
-5
–
+5
ppm
T_use
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial
10 years, 25°C
Supply Voltage and Current Consumption
Supply Voltage
Current Consumption
Standby Current
Vdd
Idd
I_std
1.71
1.8
1.89
V
2.25
2.5
2.75
V
2.52
2.8
3.08
V
2.97
3.3
3.63
V
–
31
33
mA
–
29
31
mA
No load condition, f = 20 MHz, Vdd = 1.8V
–
–
70
A
Vdd = 2.5V, 2.8V, 3.3V, ST = GND, output is Weakly Pulled Down
–
10
A
Vdd = 1.8V, ST = GND, output is Weakly Pulled Down
–
Additional supply voltages between 2.5V and 3.3V can be
supported. Contact SiTime for additional information.
No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
VCXO Characteristics
Pull Range[5, 6]
Upper Control Voltage
PR
VC_U
±25, ±50, ±100, ±150, ±200,
±400, ±800, ±1600
ppm
1.7
–
–
V
Vdd = 1.8V, Voltage at which maximum deviation is guaranteed.
2.4
–
–
V
Vdd = 2.5V, Voltage at which maximum deviation is guaranteed.
2.7
–
–
V
Vdd = 2.8V, Voltage at which maximum deviation is guaranteed.
3.2
–
–
V
Vdd = 3.3V, Voltage at which maximum deviation is guaranteed.
Voltage at which minimum deviation is guaranteed.
Lower Control Voltage
VC_L
–
–
0.1
V
Control Voltage Input Impedance
Z_in
100
–
–
kΩ
Control Voltage Input Capacitance
C_in
–
5
–
pF
Lin
–
0.1
1
%
–
kHz
Linearity
Frequency Change Polarity
Control Voltage Bandwidth (-3dB)
SiTime Corporation
Rev. 1.01
–
V_BW
See the Absolute Pull Range and APR table on page 10
Positive slope
–
8
–
990 Almanor Avenue, Sunnyvale, CA 94085
Contact SiTime for 16 kHz and other high bandwidth options
(408) 328-4400
www.sitime.com
Revised January 8, 2015
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Electrical Specifications (continued)
Table 1. Electrical Characteristics[1, 2, 3]
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
55
%
All Vdds. Refer to Note 11 for definition of Duty Cycle
Rise/Fall Time
Tr, Tf
–
1.5
2
ns
Vdd = 1.8V, 2.5v, 2.8V or 3.3V, 10% - 90% Vdd level
Output High Voltage
VOH
90%
–
–
Vdd
IOH = -7 mA (Vdd = 3.0V or 3.3V)
IOH = -4 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage
VOL
–
–
10%
Vdd
IOL = 7 mA (Vdd = 3.0V or 3.3V)
IOL = 4 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input Pull-up Impedance
Z_in
–
100
250
kΩ
For the OE/ST pin for 6-pin devices
Input Capacitance
C_in
–
5
–
pF
For the OE/ST pin for 6-pin devices
T_start
–
–
10
ms
See Figure 7 for startup resume timing diagram
T_oe
–
–
180
ns
f = 40 MHz, all Vdds. For other freq, T_oe = 100 ns + 3 clock
periods
T_resume
–
7
10
ms
See Figure 8 for resume timing diagram
f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
Input Characteristics
Startup and Resume Timing
Startup Time
OE Enable/Disable Time
Resume Time
Jitter
RMS Period Jitter
RMS Phase Jitter (random)
T_jitt
T_phj
–
1.5
2
ps
–
2
3
ps
f = 20 MHz, Vdd = 1.8V
–
0.5
1
ps
f = 20 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at
25°C temperature.
3. All max and min specifications are guaranteed across rated voltage variations and operating temperature ranges, unless specified otherwise
4. Initial tolerance is measured at Vin = Vdd/2
5. Absolute Pull Range (APR) is defined as the guaranteed pull range over temperature and voltage.
6. APR = pull range (PR) - frequency stability (F_stab) - Aging (F_aging)
Rev. 1.01
Page 2 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Table 2. Pin Description. 4-Pin Configuration
(For 2.5 x 2.0 mm and 3.2 x 2.5 mm packages)
Top View
Pin
Symbol
1
VIN
Input
Functionality
2
GND
Power
Electrical ground
3
CLK
Output
Oscillator output
4
VDD
Power
Power supply voltage[7]
0-Vdd: produces voltage dependent frequency change
VIN
1
4
VDD
GND
2
3
CLK
Note:
7. A capacitor value of 0.1 µF between VDD and GND is recommended.
Figure 1.
Table 3. Pin Description. 6-Pin Configuration
(For 5.0 x 3.2 mm and 7.0 x 5.0 mm packages)
Pin
Symbol
1
VIN
Functionality
Input
No
Connect
2
NC/OE/ ST
Top View
0-Vdd: produces voltage dependent frequency change
H or L or Open: No effect on output frequency or other device
functions
Output
Enable
H or Open[8]: specified frequency output
L: output is high
Standby
H or Open[8]: specified frequency output
L: output is low (weak pull down)[9]. Oscillation stops
3
GND
Power
4
CLK
Output
5
NC
No
Connect
6
VDD
Power
Electrical ground
VIN
1
6
VDD
NC/OE/ST
2
5
NC
GND
3
4
CLK
Oscillator output
H or L or Open: No effect on output frequency or other device
functions
Figure 2.
Power supply voltage[10]
Notes:
8. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 2 in the 6-pin package is not externally driven. If pin 2 needs to be left floating, use
the NC option
9. Typical value of the weak pull-down impedance is 5 mΩ
10. A capacitor value of 0.1 µF between VDD and GND is recommended.
Table 4. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Min.
Max.
Unit
Storage Temperature
Parameter
-65
150
°C
VDD
-0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
Table 5. Thermal Consideration
JA, 4 Layer Board
JA, 2 Layer Board
JC, Bottom
7050
191
263
30
5032
97
199
24
3225
109
212
27
2520
117
222
26
Parameter
(°C/W)
(°C/W)
(°C/W)
Table 6. Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
Rev. 1.01
Page 3 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Phase Noise Plot
-100
Phase Noise (dBc/Hz)
-110
Integrated random phase jitter (RMS, 12kHz-5MHz): 0.52ps
-120
-130
-140
-150
-160
-170 3
10
4
5
10
6
10
Frequency Offset (Hz)
10
Figure 3. Phase Noise, 10 MHz, 3.3V, LVCMOS Output
Test Circuit and Waveform
Power
Supply
0.1µF
Vdd
Vout
4
3
1
Vout
Test
Point
Power
Supply
15pF
(including probe
and fixture
capacitance)
2
OE/ST Function
0.1µF
6
5
4
1
2
3
Test
Point
15pF
(including probe
and fixture
capacitance)
OE/ST Function
Vc
Vc
Figure 4. Test Circuit (4-Pin Device)
Vdd
Figure 5. Test Circuit (6-Pin Device)
tr
tf
90% Vdd
50%
10% Vdd
High Pulse
(TH)
Low Pulse
(TL)
Period
Figure 6. Waveform
Note:
11. Duty Cycle is computed as Duty Cycle = TH/Period.
12. SiT3808 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime.
Rev. 1.01
Page 4 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Timing Diagram
80% Vdd, 2.5/2.8/3.3V devices
80% Vdd, 1.8V devices
Vdd
Vdd
50% Vdd
Pin 4 Voltage
T_start
ST Voltage
No Glitch
during start up
T_resume
CLK Output
CLK Output
T_start: Time to start from power-off
Figure 7. Startup Timing (OE/ST Mode)
T_resume: Time to resume from ST
Figure 8. Standby Resume Timing (ST Mode Only)
u
Vdd
Vdd
50% Vdd
OE Voltage
OE Voltage
50% Vdd
T_oe
T_oe
CLK Output
CLK Output
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 9. OE Enable Timing (OE Mode Only)
Figure 10. OE Disable Timing (OE Mode Only)
Notes:
13. SiT3808 supports “no runt” pulses and “no glitch” output during startup or resume.
14. SiT3808 supports gated output which is accurate within rated frequency stability from the first cycle.
Rev. 1.01
Page 5 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Programmable Drive Strength
The SiT3808 includes a programmable drive strength feature
to provide a simple, flexible tool to optimize the clock rise/fall
time for specific applications. Benefits from the programmable
drive strength feature are:
• Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time.
• Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time.
• Ability to drive large capacitive loads while maintaining full
swing with sharp edge rates.
For more detailed information about rise/fall time control and
drive strength selection, see the SiTime Application Notes
section; http://www.sitime.com/support/application-notes.
EMI Reduction by Slowing Rise/Fall Time
Figure 11 shows the harmonic power reduction as the rise/fall
times are increased (slowed down). The rise/fall times are
expressed as a ratio of the clock period. For the ratio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45,
the signal is very close to near-triangular waveform. These
results, for example, show that the 11th clock harmonic can be
reduced by 35 dB if the rise/fall edge is increased from 5% of
the period to 45% of the period.
trise=0.05
trise=0.1
trise=0.15
trise=0.2
trise=0.25
trise=0.3
10
Harmonic amplitude (dB)
0
-10
increasing the drive strength setting to “P” (reference to the
drive strength code in Table 10) on the SiT3808.
The SiT3808 can support up to 60 pF maximum capacitive
loads. Refer to the Rise/Tall Time Tables to determine the
proper drive strength for the desired combination of output
load vs. rise/fall time.
SiT3808 Drive Strength Selection
Tables 7 through 10 define the rise/fall times for a given capacitive load and supply voltage.
1. Select the table that matches the SiT3808 nominal supply
voltage (1.8V, 2.5V, 2.8V, 3.3V).
2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF)
3. Under the capacitive load column, select the desired
rise/fall times.
4. The left-most column represents the part number code for
the corresponding drive strength.
5. Add the drive strength code to the part number for ordering
purposes.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 7 through
10, the maximum frequency the oscillator can operate with
guaranteed full swing of the output voltage over temperature
can be calculated as follows:
Max Frequency =
trise=0.35
trise=0.4
-20
trise=0.45
1
6 x Trf_10/90
-30
Where Trf_10/90 is the typical rise/fall time at 10% to 90% Vdd.
-40
-50
Example 1
-60
Calculate fMAX for the following condition:
-70
-80
1
3
5
7
9
11
Harm onic num ber
Figure 11. Harmonic EMI reduction as a Function of
Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
increase rise/fall time (edge rate) of the input clock. Some
chipsets would require faster rise/fall time in order to reduce
their sensitivity to this type of jitter. Refer to the Rise/Fall Time
Tables to determine the proper drive strength.
• Vdd = 3.3V (Table 10)
• Capacitive Load: 30 pF
• Typical Tr/f time = 1.66 ns (drive strength part number code
= G)
Part number for the above example:
SiT3808AIGG2-33EH-49.152000
Drive strength code is inserted here. Default setting is “-”
High Output Load Capability
The rise/fall time of the input clock varies as a function of the
actual capacitive load the clock drives. At any given drive
strength, the rise/fall time becomes slower as the output load
increases. As an example, for a 3.3V SiT3808 device with
default drive strength setting, the typical rise/fall time is
1.15 ns for 15 pF output load. The typical rise/fall time slows
down to 2.72 ns when the output load increases to 45 pF. One
can choose to speed up the rise/fall time to 1.41 ns by then
Rev. 1.01
Page 6 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Rise/Fall Time (10% to 90%) vs CLOAD Tables
Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD
Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
12.45
17.68
19.48
46.21
57.82
L
8.68
13.59
18.36
32.70
42.06
A
6.50
10.27
16.21
23.92
30.73
A
4.42
7.18
11.93
16.60
21.38
R
4.38
7.05
11.61
16.17
20.83
R
2.93
4.78
8.15
11.19
14.59
B
3.27
5.30
8.89
12.18
15.75
B
2.21
3.57
6.19
8.55
11.04
S
2.62
4.25
7.20
9.81
12.65
S
1.67
2.87
4.94
6.85
8.80
D
2.19
3.52
6.00
8.31
10.59
D
1.50
2.33
4.11
5.68
7.33
T
1.76
3.01
5.14
7.10
9.15
T
1.06
2.04
3.50
4.84
6.26
E
1.59
2.59
4.49
6.25
7.98
E
0.98
1.69
3.03
4.20
5.51
U
1.49
2.28
3.96
5.55
7.15
U
0.93
1.48
2.69
3.73
4.92
F
1.22
2.10
3.57
5.00
6.46
F
0.90
1.37
2.44
3.34
4.42
W
1.07
1.88
3.23
4.50
5.87
W
0.87
1.29
2.21
3.04
4.02
G
1.01
1.64
2.95
4.12
5.40
G or "-": Default
0.67
1.20
2.00
2.79
3.69
X
0.96
1.50
2.74
3.80
4.98
X
0.44
1.10
1.86
2.56
3.43
K
0.92
1.41
2.56
3.52
4.64
K
0.38
0.99
1.76
2.37
3.18
Y
0.88
1.34
2.39
3.25
4.32
Y
0.36
0.83
1.66
2.20
2.98
Q
0.86
1.29
2.24
3.04
4.06
Q
0.34
0.71
1.58
2.07
2.80
Z or "-": Default
0.82
1.24
2.07
2.89
3.82
Z
0.33
0.65
1.51
1.95
2.65
M
0.77
1.20
1.94
2.72
3.61
M
0.32
0.62
1.44
1.85
2.50
N
0.66
1.15
1.84
2.58
3.41
N
0.31
0.59
1.37
1.77
2.39
P
0.51
1.09
1.76
2.45
3.24
P
0.30
0.57
1.29
1.70
2.28
Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD
Table 10. Vdd = 3.3V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
7.93
12.69
17.94
30.10
38.89
L
7.18
11.59
17.24
27.57
35.57
A
4.06
6.66
11.04
15.31
19.80
A
3.61
6.02
10.19
13.98
18.10
R
2.68
4.40
7.53
10.29
13.37
R
2.31
3.95
6.88
9.42
12.24
B
2.00
3.25
5.66
7.84
10.11
B
1.65
2.92
5.12
7.10
9.17
S
1.59
2.57
4.54
6.27
8.07
S
1.43
2.26
4.09
5.66
7.34
D
1.19
2.14
3.76
5.21
6.72
D
1.01
1.91
3.38
4.69
6.14
T
1.00
1.79
3.20
4.43
5.77
T
0.94
1.51
2.86
3.97
5.25
E
0.94
1.51
2.78
3.84
5.06
E
0.90
1.36
2.50
3.46
4.58
U
0.90
1.38
2.48
3.40
4.50
U
0.86
1.25
2.21
3.03
4.07
F
0.87
1.29
2.21
3.03
4.05
F or "-": Default
0.48
1.15
1.95
2.72
3.65
W
0.62
1.19
1.99
2.76
3.68
W
0.38
1.04
1.77
2.47
3.31
G or "-": Default
0.41
1.08
1.84
2.52
3.36
G
0.36
0.87
1.66
2.23
3.03
X
0.37
0.96
1.72
2.33
3.15
X
0.34
0.70
1.56
2.04
2.80
K
0.35
0.78
1.63
2.15
2.92
K
0.33
0.63
1.48
1.89
2.61
Y
0.33
0.67
1.54
2.00
2.75
Y
0.32
0.60
1.40
1.79
2.43
Q
0.32
0.63
1.46
1.89
2.57
Q
0.32
0.58
1.31
1.69
2.28
Z
0.31
0.60
1.39
1.80
2.43
Z
0.30
0.56
1.22
1.62
2.17
M
0.30
0.57
1.31
1.72
2.30
M
0.30
0.55
1.12
1.54
2.07
N
0.30
0.56
1.22
1.63
2.22
N
0.30
0.54
1.02
1.47
1.97
P
0.29
0.54
1.13
1.55
2.13
P
0.29
0.52
0.95
1.41
1.90
Rev. 1.01
Page 7 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Instant Samples with Time Machine and
Field Programmable Oscillators
SiTime supports a field programmable version of the SiT3808
low power oscillator for fast prototyping and real time customization of features. The field programmable devices (FP
devices) are available for all four standard SiT3808 package
sizes and can be configured to one’s exact specification using
the Time Machine II, an USB powered MEMS oscillator
programmer.
For more information regarding SiTime’s field programmable
solutions, visit http://www.sitime.com/time-machine and
http://www.sitime.com/fp-devices.
SiT3808 is typically factory-programmed per customer
ordering codes for volume delivery.
Customizable Features of the SiT3808 FP Devices Include
• Any frequency between 1 and 80 MHz
• Three frequency stability options: ±10 ppm, ±25 ppm,
±50 ppm
• Two operating temperatures: -20 to 70°C or -40 to 85°C
• Four supply voltage options: 1.8V, 2.5V, 2.8V, and 3.3V
• Eight pull range options: ±25 ppm, ±50 ppm, ±100 ppm,
±150 ppm, ±200 ppm, ±400 ppm, ±800 ppm, ±1600 ppm
Rev. 1.01
Page 8 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[15]
Recommended Land Pattern (Unit: mm)
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)
1.9
1.25
1.5
YXXXX
0.50
1.00
2.4 ± 0.05
2.7 ± 0.05
1.0
0.85
0.75 ± 0.05
1.1
3.2 x 2.5 x 0.75 mm
3.2 ± 0.05
#3
1.9
#2
#1
0.9
0.75 ± 0.05
#2
1.2
#1
0.7
YXXXX
#4
0.9
#3
2.5 ± 0.05
#4
2.2
2.1
1.4
5.0 x 3.2 x 0.75 mm
#5
#4
#2
#3
#4
#5
#6
1.20
#6
YXXXX
#1
#3
#2
#1
0.75±0.05
7.0 x 5.0x 0.90 mm
7.0±0.10
#3
#3
#2
3.80
#6
#5
#1
1.60
#2
#4
1.10
YXXXX
#1
5.08
5.08
#4
2.60
#5
5.0±0.10
#6
0.90 ±0.10
1.40
1.60
Note:
15.Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
Rev. 1.01
Page 9 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Ordering Information
SiT3808AC -22-33EH-49.152000D
Packing Method
“T”: 12 mm Tape & Reel, 3ku reel
“Y”: 12 mm Tape & Reel, 1ku reel
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
Blank for Bulk
Part Family
“SiT3808”
Revision Letter
“A” is the revision
Temperature Range
Frequency
“C” Commercial, -20 to 70ºC
1.000000 to 80.000000 MHz
“I” Industrial, -40 to 85ºC
Pull Range Options
“M” for ±25 ppm
“B” for ±50 ppm
“E” for ±100 ppm
“G” for ±150 ppm
“H” for ±200 ppm
“X” for ±400 ppm
“Y” for ±800 ppm
“Z” for ±1600 ppm
Output Drive Strength
“–” Default (datasheet limits)
See rise/fall tables on page 7
“S”
“D”
“T”
“E”
“L”
“A”
“R”
“B”
“U”
“F”
“W”
“G”
“X”
“K”
“Y”
“Q”
“Z”
“M”
“N”
“P”
Feature Pin
“N” for No Connect in 6-pin devices,
Default value in 4-pin device
Package
“G” 2.5 x 2.0 mm x mm
“2” 4-pin, 3.2 x 2.5 mm x mm
“C” 6-pin, 5.0 x 3.2 mm x mm
“D” 6-pin, 7.0 x 5.0 mm x mm
“E” for Output Enable (6-pin only)
“S” for Standby (6-pin only)
Supply Voltage
Frequency Stability
“F” for ±10 ppm
“2” for ±25 ppm
“3” for ±50 ppm
“18” for 1.8 V ±5%
“25” for 2.5 V ±10%
“28” for 2.8 V ±10%
“33” for 3.3 V ±10%
Table 12. APR Definition
Absolute pull range (APR) = Norminal pull range (PR) - frequency stability (F_stab) - Aging (F_aging)
Frequency Stability
Nominal Pull Range
± 10
± 25
± 50
APR (PPM)
± 25
± 10
–
± 50
± 35
± 20
–
–
± 100
± 85
± 70
± 45
± 150
± 135
± 120
± 95
± 200
± 185
± 170
± 145
± 400
± 385
± 370
± 345
± 800
± 785
± 770
± 745
± 1600
± 1585
± 1570
± 1545
Table 13. Ordering Codes for Supported Tape & Reel Packing Method[16]
Device Size
12 mm T&R (3ku)
12 mm T&R (1ku)
8 mm T&R (3ku)
8 mm T&R 1ku)
2.5 x 2.0 mm
–
–
D
E
3.2 x 2.5 mm
–
–
D
E
5.0 x 3.2 mm
T
Y
–
–
7.0 x 5.0 mm
T
Y
–
–
Note:
16. “–” indicates “not available.”
Rev. 1.01
Page 10 of 11
www.sitime.com
SiT3808
1 MHz to 80 MHz High Performance MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Table 14. Additional Information
Document
Description
Download Link
Manufacturing
Notes
Tape & Reel dimension,
reflow profile and other
manufacturing related info
http://www.sitime.com/component/docman/doc_download/85-manufaturing-notes-for-sitime-oscillators
Qualification
Reports
RoHS report, reliability reports,
composition reports
http://www.sitime.com/support/quality-and-reliability
Performance
Reports
Additional performance data
such as phase noise, current
consumption and jitter for
selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination
Techniques
Termination design
recommendations
http://www.sitime.com/support/application-notes
Layout Techniques
Layout recommendations
http://www.sitime.com/support/application-notes
VCXO
Specifications
Definition of key VCXO
specifications such as
APR and Kv
http://www.sitime.com/support2/documents/AN10020_VCXO_SpecDefinitions_rev1.pdf
VCXO in PLL
Design
Selection of VCXO parameters
and trade-offs in PLL designs
http://www.sitime.com/support2/documents/AN10021_VCXO_PLL_Design_Guidelines_1v0.pdf
Revision History
Table 15. Datasheet Version and Change Log
Version
Release Date
0.6
1/24/2013
Change Summary
1.0
3/7/14
• Preliminary removed from title
• Updated features and application
• Updated electrical specifications table
• Updated figure 4,
• Added new 6-pin device for figure 5
• Updated timing diagrams
• Updated programmable drive strength section
• Updated ordering information drawing
• Updated APR table
• Updated ordering codes for tape and reel table
• Reformatted additional information table columns
1.01
1/8/15
•
•
Preliminary
Corrected CLK and VDD functionality description in Table 2
Revised VIN functionality description in Table 3
© SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
Rev. 1.01
Page 11 of 11
www.sitime.com
The Smart Timing Choice
The Smart Timing Choice
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
SiTime Corporation
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
SiTime Corporation
Silicon MEMS Outperforms Quartz Rev. 1.1
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised October 5, 2013
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
The Smart Timing Choice
Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
• Electrostatically driven MEMS resonator is more immune
to EMS
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Mean Time Between Failure (Million Hours)
- 30
- 39
500
IDT (Fox)
38
SiTime
20X Better
28
Epson
TXC
16
Pericom
14
Average Spurs (dB)
SiTime
- 40
- 40
- 42
- 43
- 45
- 50
- 60
SiTime
54X Better
- 70
- 73
- 80
- 90
200
0
Kyocera
600
400
Figure 1. Reliability Comparison[1]
Epson
TXC
CW
SiLabs
SiTime
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Aging
Best Power Supply Noise Rejection
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator
SiTime MEMS vs. Quartz Aging
10
SiTime MEMS Oscillator
Quartz Oscillator
8.0
Aging (±PPM)
8
SiTime
2X Better
6
4
2
0
3.0
3.5
1.5
1-Year
10-Year
Figure 2. Aging Comparison[2]
Silicon MEMS Outperforms Quartz Rev. 1.1
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• Best analog CMOS design expertise
Additive Integrated Phase Jitter per mVp-p
Injected Noise (ps/mv)
Why is SiTime Best in Class:
Power Supply Noise Rejection
SiTIme
5.0
NDK
Epson
Kyocera
4.0
3.0
2.0
SiTime
SiTime
3X Better
1.0
0.0
10
100
1,000
Power Supply Noise Frequency (kHz)
10,000
Figure 4. Power Supply Noise Rejection[4]
www.sitime.com
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
The Smart Timing Choice
Best Vibration Robustness
Best Shock Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Vibration Sensitivity (ppb/g)
TXC
Epson
Connor Winfield
Kyocera
SiLabs
100.00
10.00
1.00
SiTime
Up to 30x
Better
0.10
10
100
Vibration Frequency (Hz)
Figure 5. Vibration Robustness[5]
1000
Peak Frequency Deviation (PPM)
Vibration Sensitivity vs. Frequency
SiTime
16
14
Differential XO Shock Robustness - 500 g
14.3
12.6
12
10
8
SiTime
Up to 25x
Better
6
3.9
4
2.9
2.5
2
0.6
0
Kyocera
Epson
TXC
CW
SiLabs
SiTime
Figure 6. Shock Robustness[6]
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
Silicon MEMS Outperforms Quartz Rev. 1.1
www.sitime.com
Document Feedback Form
The Smart Timing Choice
The Smart Timing Choice
SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form
below to productsupport@sitime.com.
1. Does the Electrical Characteristics table provide complete information?
Yes
No
If No, what parameters are missing?
_________________________________________________________________________________________________
2. Is the organization of this document easy to follow?
Yes
No
If “No,” please suggest improvements that we can make:
_________________________________________________________________________________________________
3. Is there any application specific information that you would like to see in this document? (Check all that apply)
EMI
Termination recommendations
Shock and vibration performance
Other
If “Other,” please specify:
_________________________________________________________________________________________________
4. Are there any errors in this document?
Yes
No
If “Yes”, please specify (what and where):
_________________________________________________________________________________________________
5. Do you have additional recommendations for this document?
_________________________________________________________________________________________________
Name ________________________________________________________________________________
Title
________________________________________________________________________________
Company _________________________________________________________________________________________
Address _________________________________________________________________________________________
City / State or Province / Postal Code / Country ___________________________________________________________
Telephone __________________________________
Application ________________________________________________________________________________________
Would you like a reply?
Yes
No
Thank you for your feedback. Please click the email icon in your Adobe Reader tool bar and send to productsupport@sitime.com.
Or you may use our online feedback form.
Feedback Form Rev. 1.0
www.sitime.com
工商网监
湘ICP备2023018690号
