TMB140N10A

TMB140N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES  High Density Cell Design for Ultra Low Rdson  Fully Characterized Avalanche Voltage and Current  Good Stability with High EAS  Excellent Package for Good Heat Dissipation APPLICATIONS  Power Switching Application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply Device Marking and Package Information Device Package Marking TMB140N10A TO-263 140N10A Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) Symbol Value Unit VDSS 100 V ID 130 A IDM 520 A VGSS ±20 V Continuous Drain Current (Package Limited) Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) EAS 1300 mJ Avalanche Current (note1) IAS 70 A PD 235 W TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.64 Thermal Resistance, Junction-to-Ambient RthJA 62.5 Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W V1.0 1 www.tsinghuaicwx.com TMB140N10A Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- VDS = 100V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 100V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 -- 4 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 30A -- 6.0 7.0 mΩ gfs VDS = 5V, ID = 20A 50 -- -- S -- 6320 -- -- 540 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 359 -- Total Gate Charge Qg -- 146 -- Gate-Source Charge Qgs -- 27 -- Gate-Drain Charge Qgd -- 54 -- Turn-on Delay Time td(on) -- 31.5 -- Turn-on Rise Time tr -- 33 -- Turn-off Delay Time td(off) -- 46 -- -- 17.5 -- -- -- 140 -- -- 560 -- -- 1.2 V -- 51 -- ns -- 61 -- nC Turn-off Fall Time VDD = 50V, ID = 20A, VGS = 10V VDD = 50V, ID = 2A, RG = 2.5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25ºC, ISD = 20A, VGS = 0V IF = 20A, diF/dt = 500A/μs A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. IAS = 70A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V1.0 2 www.tsinghuaicwx.com TMB140N10A Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 200 100 ID, Drain Current (A) 120 ID, Drain Current (A) 10V 8V 6V 5V 4.5V 4V 160 80 40 VDS = 5V 80 60 40 TJ = 150ºC TJ = 25ºC 20 0 0 0 1 2 3 4 5 0 1 VDS, Drain-to-Source Voltage (V) 2 Figure 3. On-Resistance vs. Drain Current 6 Figure 4. Capacitance VGS = 10V TJ = 25ºC Capacitance (pF) RDS(on), On-Resistance (mΩ) 5 105 6.5 6 104 Ciss 103 Coss 5.5 VGS = 0 f = 1MHz 102 5 0 30 60 90 0 120 10 ID, Drain Current (A) Crss 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 102 Is, Source Current (A) 10 VGS, Gate-to-Source Voltage (V) 4 VGS, Gate-to-Source Voltage (V) 7 8 6 VDD = 50V 4 2 101 TJ = 150ºC 100 TJ = 25ºC 10-1 10-2 10-3 0 10-4 0 20 40 60 80 100 120 140 160 0 Qg, Total Gate Charge (nC) V1.0 3 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) 3 www.tsinghuaicwx.com TMB140N10A Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Threshold Voltage vs. Junction Temperature 1 2.5 0.5 2 VGS(th), (Variance) RDS(on), (Normalized) VGS = 10V ID = 30A 1.5 1 ID = 250µA 0 -0.5 -1 0.5 -1.5 0 -50 0 50 100 -50 150 TJ, Junction Temperature (ºC) 0 50 100 150 TJ, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance ZthJC, Thermal Impedance (Normalized) 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 Tp, Pulse Width (s) V1.0 4 www.tsinghuaicwx.com TMB140N10A Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V1.0 5 www.tsinghuaicwx.com TMB140N10A Wuxi Unigroup Microelectronics Company TO-263 V1.0 6 www.tsinghuaicwx.com TMB140N10A Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. 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Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V1.0 7 www.tsinghuaicwx.com