FH3400C

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD FH3400C N-Channel Enhancement Mode MOSFET Description General Features The FH3400C uses advanced trench technology to provide excellent RDS(ON), low gate charge and high  density cell Design for ultra low on resistance. This device is suitable for use as a load switch or in PWM applications. - Application  PWM applications  Load switch Schematic diagram VDS =30V，ID =4.7A RDS(ON) (Typ.)=27mΩ RDS(ON) (Typ.)=30mΩ RDS(ON) (Typ.)=39mΩ @V GS = 10V @VGS = 4.5V @VGS = 2.5V  High power and current handing capability  Lead free product is acquired  Surface mount package SOT-23 top view Marking and Pin Assignment Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted) symbol limit unit Drain-source voltage VDS 30 V Gate -source voltage V GS ±12 V Drain current-continuousa@Tj=125℃ -pulse db ID 4.7 A IDM 19 A Drain-source Diode forward current Is 2 A Maximum power dissipation PD 1.4 W Operating junction Temperature range Tj -55 — 150 ℃ parameter Thermal Characteristics Thermal Resistance junction-to ambient www.xfhong.com Rth JA 109 1/6 ℃/W Ver1.0 FH3400C N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 30 - - V Zero gate voltage drain current IDSS VDS=30V, VGS=0V - - 1 µA Gate-body leakage IGSS VDS=0V, VGS=±12V - - ±100 nA VGS(th) VDS=VGS, ID=250µA 0.6 0.9 1.5 V VGS= 10V, ID=4A - 27 35 VGS=4.5V, ID =4A - 30 36 39 52 - 35 - - 490 - - 66 - - 42 - - 3 - - 2.5 - - 25 - - 4 - - 6 - - 1.3 - - 1.8 - - 0.76 1.16 ON Characteristics Gate threshold voltage Drain-source on-state resistance RDS(ON) VGS=2.5V, ID=2A Forward transconductance gfs VGS=5V, ID =4.7A mΩ S Dynamic Characteristics Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS VDS=15V ,VGS=0V f=1.0MHz pF Switching Characteristics Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge tD(ON) tr tD(OFF) tf VDS=15V VGS=10V RL=2.6 ohm R GEN=3ohm Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=15V,ID =4.7 AVGS=4.5V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage VSD VGS=0V,Is=1A V Notes: a. surface mounted on FR4 board,t≤10sec b. pulse test: pulse width≤300μs,duty≤2% c. guaranteed by design, not subject to production testing www.xfhong.com 2/6 Ver1.0 FH3400C N-Channel Enhancement Mode MOSFET Typical Performance Characteristics www.xfhong.com 3/6 Ver1.0 FH3400C www.xfhong.com N-Channel Enhancement Mode MOSFET 4/6 Ver1.0 FH3400C www.xfhong.com N-Channel Enhancement Mode MOSFET 5/6 Ver1.0 FH3400C N-Channel Enhancement Mode MOSFET Package Information : SOT-23 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.xfhong.com Dimensions In Millimeters Min. Max. 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.150 0.100 1.050 0.500 0.150 3.000 1.400 2.550 Dimensions In Inches Min. Max. 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.950 TYP. 1.800 0.037 TYP. 2.000 0.071 0.550 REF. 0.300 0° 0.045 0.004 0.041 0.020 0.006 0.118 0.055 0.100 0.079 0.022 REF. 0.500 8° 6/6 0.012 0° 0.020 8° Ver1.0