SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
FH3415S
Description
General Features
Trench Power LV MOSFET technology
High Power and Current handing capability
Low Gate Charge
Application
PWM applications
Power management
Load switch
Schematic diagram
DS
= - 20V ; ID = - 3.4A
RDS(ON)(Typ.)=
RDS(ON)(Typ.)=
RDS(ON)(Typ.)=
RDS(ON)(Typ.)=
40 mΩ
42 mΩ
55 mΩ
76 mΩ
@VGS = - 5V
@VGS = -4.5V
@VGS = -2.5V
@VGS = -2.5V
Logic Level Compatible
SMD Package (SOT-23)
Trench Technology
Fast Switching
Marking and Pin Assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)
Parameter
Symbol
Maximum
Drain-source Voltage
VDS
-20
V
Gate-source Voltage
VGS
±10
V
Drain Current
TA=25℃
ID
TA=70℃
-3.4
-2.7
Unit
A
Pulsed Drain Current A
IDM
-14
A
Total Power Dissipation @ TA=25℃
PD
1
W
Thermal Resistance Junction-to-Ambient B
RθJA
125
℃/ W
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
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1/5
Ver1.0
P-Channel Enhancement Mode MOSFET
FH3415S
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=-250μA
-20
-23
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V,TC=25℃
-1
μA
IGSS
VGS= ±10V, VDS=0V
±100
nA
VGS(th)
VDS= VGS, ID=-250μA
-0.62
-1.0
V
VGS= -5.0V, ID=- 2A
40
49
VGS= -4.5V, ID=-3.4A
42
51
VGS= -2.5V, ID=-2A
55
67
76
91
-0.8
-1.2
V
-3.4
A
Static Parameter
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
mΩ
VGS= -1.8V, ID=-2A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
-0.4
V
VSD
IS=-3.4A,VGS=0V
IS
Dynamic Parameters
Input Capacitance
Ciss
550
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
65
Total Gate Charge
Qg
4.3
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
1.1
Turn-on Delay Time
tD(on)
12
Turn-on Rise Time
tr
VDS=-10V,VGS=0V,f=1MHZ
89
pF
Switching Parameters
VGS=-4.5V,VDS=-10V,ID=-3.4A
0.8
54
VGS=-4.5V,VDD=-10V, ID=-1A,
RGEN=2.5Ω
Turn-off Delay Time
Turn-off Fall Time
nC
ns
tD(off)
15
tf
9
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
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2/5
Ver1.0
FH3415S
P-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
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Figure6. Drain-Source on Resistance
3/5
Ver1.0
FH3415S
P-Channel Enhancement Mode MOSFET
Figure7. Safe Operation Area
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Figure8. Switching wave
4/5
Ver1.0
P-Channel Enhancement Mode MOSFET
FH3415S
Package Information : SOT-23
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
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Dimensions In Millimeters
Min.
Max.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Dimensions In Inches
Min.
Max.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 TYP.
1.800
0.037 TYP.
2.000
0.071
0.550 REF.
0.300
0°
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
0.079
0.022 REF.
0.500
8°
5/5
0.012
0°
0.020
8°
Ver1.0
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