FH3415S

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET FH3415S Description General Features  Trench Power LV MOSFET technology  High Power and Current handing capability  Low Gate Charge      Application      PWM applications  Power management  Load switch Schematic diagram DS = - 20V ; ID = - 3.4A RDS(ON)(Typ.)= RDS(ON)(Typ.)= RDS(ON)(Typ.)= RDS(ON)(Typ.)= 40 mΩ 42 mΩ 55 mΩ 76 mΩ @VGS = - 5V @VGS = -4.5V @VGS = -2.5V @VGS = -2.5V Logic Level Compatible SMD Package (SOT-23) Trench Technology Fast Switching Marking and Pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted) Parameter Symbol Maximum Drain-source Voltage VDS -20 V Gate-source Voltage VGS ±10 V Drain Current TA=25℃ ID TA=70℃ -3.4 -2.7 Unit A Pulsed Drain Current A IDM -14 A Total Power Dissipation @ TA=25℃ PD 1 W Thermal Resistance Junction-to-Ambient B RθJA 125 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ www.xfhong.com 1/5 Ver1.0 P-Channel Enhancement Mode MOSFET FH3415S Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -20 -23 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V,TC=25℃ -1 μA IGSS VGS= ±10V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=-250μA -0.62 -1.0 V VGS= -5.0V, ID=- 2A 40 49 VGS= -4.5V, ID=-3.4A 42 51 VGS= -2.5V, ID=-2A 55 67 76 91 -0.8 -1.2 V -3.4 A Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) mΩ VGS= -1.8V, ID=-2A Diode Forward Voltage Maximum Body-Diode Continuous Current -0.4 V VSD IS=-3.4A,VGS=0V IS Dynamic Parameters Input Capacitance Ciss 550 Output Capacitance Coss Reverse Transfer Capacitance Crss 65 Total Gate Charge Qg 4.3 Gate Source Charge Qgs Gate Drain Charge Qgd 1.1 Turn-on Delay Time tD(on) 12 Turn-on Rise Time tr VDS=-10V,VGS=0V,f=1MHZ 89 pF Switching Parameters VGS=-4.5V,VDS=-10V,ID=-3.4A 0.8 54 VGS=-4.5V,VDD=-10V, ID=-1A, RGEN=2.5Ω Turn-off Delay Time Turn-off Fall Time nC ns tD(off) 15 tf 9 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.xfhong.com 2/5 Ver1.0 FH3415S P-Channel Enhancement Mode MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance www.xfhong.com Figure6. Drain-Source on Resistance 3/5 Ver1.0 FH3415S P-Channel Enhancement Mode MOSFET Figure7. Safe Operation Area www.xfhong.com Figure8. Switching wave 4/5 Ver1.0 P-Channel Enhancement Mode MOSFET FH3415S Package Information : SOT-23 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.xfhong.com Dimensions In Millimeters Min. Max. 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.150 0.100 1.050 0.500 0.150 3.000 1.400 2.550 Dimensions In Inches Min. Max. 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.950 TYP. 1.800 0.037 TYP. 2.000 0.071 0.550 REF. 0.300 0° 0.045 0.004 0.041 0.020 0.006 0.118 0.055 0.100 0.079 0.022 REF. 0.500 8° 5/5 0.012 0° 0.020 8° Ver1.0