TPA120R800A

TPA120R800A Wuxi Unigroup Microelectronics Company 1200V Super-Junction Power MOSFET DESCRIPTION 1200V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighting markets ， designed by Wuxi Unigroup Microelectronics Company. FEATURES APPLICATIONS  Very low FOM RDS(on)×Qg  Switch Mode Power Supply (SMPS)  100% avalanche tested  Uninterruptible Power Supply (UPS)   Power Factor Correction (PFC) RoHS compliant Device Marking and Package Information Device Package Marking TPA120R800A TO-220F 120R800A Parameter Value Unit VDS @ Tj,max 1200 V RDS(on),max 0.8 Ω ID 12 A Qg,typ 60 nC IDM 36 A Key Performance Parameters V1.0 1 www.tsinghuaicwx.com TPA120R800A Wuxi Unigroup Microelectronics Company Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) Continuous Drain Current TC = 25ºC Symbol Value Unit VDSS 1200 V 12 ID TC = 100ºC Pulsed Drain Current A 7.2 (note1) IDM 36 A VGSS ±30 V EAS 180 mJ Avalanche Current IAS 6 A Power Dissipation PD 34 W Continuous Body Diode Current IS 12 ISM 36 MOSFET dv/dt ruggedness, VDS = 0...960V dv/dt 50 V/ns Reverse diode dv/dt, VDS = 0…960V, ISD ≤ ID dv/dt 5 A/us TJ, Tstg -55~+150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 3.67 Thermal Resistance, Junction-to-Ambient RthJA 80 Gate-Source Voltage Single Pulse Avalanche Energy (note2) A Pulsed Diode Forward Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W V1.0 2 www.tsinghuaicwx.com TPA120R800A Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 1200 -- -- VDS = 1200V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 1200V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3A -- 0.62 0.8 Ω gfs VDS = 10V, ID = 4A -- 10 -- S -- 2573 -- -- 66 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 2.3 -- Total Gate Charge Qg -- 60 -- Gate-Source Charge Qgs -- 14 -- Gate-Drain Charge Qgd -- 22 -- Turn-on Delay Time td(on) -- 51 -- Turn-on Rise Time tr -- 71 -- Turn-off Delay Time td(off) -- 154 -- -- 67 -- -- 0.9 1.2 V -- 675 -- ns -- 9 -- μC -- 25 -- A Turn-off Fall Time VDD = 400V, ID = 4A, VGS = 10V VDD = 400V, ID = 4A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Body Diode Voltage Reverse Recovery Time VSD TJ = 25ºC, ISD = 4A, VGS = 0V trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm VR = 100V, IF = IS, diF/dt = 100A/μs Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V1.0 3 www.tsinghuaicwx.com TPA120R800A Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 18 20 15 VDS = 10V 16 20V 10V 8V 7V 6V 5V ID, Drain Current (A) ID, Drain Current (A) 25 10 TJ = 25ºC 14 12 10 8 6 TJ = 150ºC 4 5 2 0 0 0 5 10 15 0 20 2 VDS, Drain-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current Capacitance (pF) RDS(on), On-Resistance (Ω) 1 0.9 0.8 0.7 107 10 Ciss 106 105 Coss 104 Crss 103 0.6 VGS = 0 f = 1MHz 102 0 3 6 9 12 15 0 200 400 600 800 1000 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 12 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 8 108 VGS = 10V TJ = 25ºC 0.5 10 VDD = 400V 8 6 4 101 TJ = 150ºC TJ = 25ºC 100 2 0 10-1 0 10 20 30 40 50 60 0.2 Qg, Total Gate Charge (nC) V1.0 6 Figure 4. Capacitance 1.2 1.1 4 VGS, Gate-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) 4 www.tsinghuaicwx.com TPA120R800A Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Breakdown voltage vs. Junction Temperature Figure 7. On-Resistance vs. Junction Temperature 1.3 ID = 250µA 2.5 2 VBR(DSS), (Normalized) RDS(on), (Normalized) 3 VGS = 10V ID = 3A 1.5 1 0.5 0 -100 1.2 1.1 1 0.9 0.8 -50 0 50 100 150 200 -30 0 TJ, Junction Temperature (ºC) 90 120 150 Figure 10. Safe operation area for 101 102 ID, Drain Current(A) ZthJC, Thermal Impedance (K/W) 60 TJ, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 101 100 10-1 10-3 10-2 100 101 tp = 10us tp = 100us tp = 1ms tp = 10ms DC 101 102 103 VDS, Drain-Source Voltage(V) Tp, Pulse Width (s) V1.0 30 5 www.tsinghuaicwx.com TPA120R800A Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V1.0 6 www.tsinghuaicwx.com TPA120R800A Wuxi Unigroup Microelectronics Company TO-220F V1.0 7 www.tsinghuaicwx.com TPA120R800A Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V1.0 8 www.tsinghuaicwx.com