LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* AC input response
* High input current
( IF : MAX. 150mA )
* High input-output isolation voltage
( Viso = 5,000Vrms )
* Low collector dark current
( ICEO : MAX. 10-7A at VCE = 20V )
* Current transfer ratio
( CTR : MIN. 20% at IF = ±100mA, VCE = 2V )
* Dual-in-line package :
LTV-814H : 1-channel type
LTV-824H : 2-channel type
LTV-844H : 4-channel type
* Wide lead spacing package :
LTV-814HM : 1-channel type
LTV-824HM : 2-channel type
LTV-844HM : 4-channel type
* Surface mounting package :
LTV-814HS : 1-channel type
LTV-824HS : 2-channel type
LTV-844HS : 4-channel type
* Tape and reel packaging :
LTV-814HS-TA1, LTV-824HS-TA1
* UL approved ( No. E113898 ) only 814H
* TUV approved ( No. R9653630 )
* CSA approved ( No. CA91533 )
* VDE approved ( No. 094722 ) only 814H
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
1 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-814H :
LTV-824H :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
2 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-844H :
LTV-814HM :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
3 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-824HM :
LTV-844HM :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
4 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-814HS :
LTV-824HS :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
5 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-844HS :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
6 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
LTV-814HS-TA1 :
LTV-824HS-TA1 :
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Symbol
W
P0
F
P2
P1
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Dimensions in mm ( inches )
16 ± 0.3 ( .63 )
4 ± 0.1 ( .15 )
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
12 ± 0.1 ( .472 )
Page :
7 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
SYMBOL
RATING
UNIT
Forward Current
IF
±150
mA
Power Dissipation
P
230
mW
Collector - Emitter Voltage
VCEO
35
V
Emitter - Collector Voltage
VECO
6
V
Collector Current
IC
80
mA
Collector Power Dissipation
PC
160
mW
Ptot
320
mW
Viso
5,000
Vrms
Operating Temperature
Topr
-30 ~ +100
°C
Storage Temperature
Tstg
-55 ~ +125
°C
Tsol
260
°C
INPUT
OUTPUT
Total Power Dissipation
*1 Isolation Voltage
*2 Soldering Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
8 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
CONDITIONS
Forward Voltage
VF
—
1.4
1.7
V
IF=±100mA
Terminal Capacitance
Ct
—
50
400
pF
V=0, f=1KHz
Collector Dark Current
ICEO
—
—
100
nA
VCE=20V, IF=0
Collector-Emitter
Breakdown Voltage
BVCEO
35
—
—
V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Voltage
BVECO
6
—
—
V
IE=10µA
IF=0
IC
20
—
80
mA
CTR
20
—
80
%
Collector-Emitter
Saturation Voltage
VCE(sat)
—
0.1
0.2
V
IF=±100mA
IC=1mA
Isolation Resistance
Riso
—
Ω
DC500V
40 ~ 60% R.H.
Floating Capacitance
Cf
—
0.6
1
pF
V=0, f=1MHz
Cut-Off Frequency
fc
15
80
—
KHz
Response Time (Rise)
tr
—
4
18
µs
Response Time (Fall)
tf
—
3
18
µs
INPUT
OUTPUT
Collector Current
* Current Transfer Ratio
TRANSFER
CHARACTERISTICS
* CTR =
5×1010 1×1011
IF=±100mA
VCE=2V
VCE=5V, IC=2mA
RL=100Ω, -3dB
VCE=2V, IC=2mA
RL=100Ω
IC
× 100%
IF
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
9 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current
vs. Ambient Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation Pc (mW)
Forward current I F(mA)
200
150
100
50
0
-30
0
25
50
75
100
125
200
160
150
100
50
0
-30
0
Ambient temperature Ta ( C)
4
40mA
30mA
20mA
2
Ta= 75 C
o
50 C
200
100
50
20
10
5
2
0
20
40
60
80
100
0
0.5
Forward current IF (mA)
1.0
1.5
2.0
2.5
3.0
Forward voltage VF (V)
Fig.5 Current Transfer Ratio
vs. Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
80
5
VCE = 5V
o
Ta= 25 C
70
60
50
40
30
20
o
Ta= 25 C
Collector current Ic (mA)
Current transfer ratio CTR (%)
o
25 oC
0C
o
-25 C
1
0
40
I F = 150mA
Pc(MAX.)
30
100mA
20
50mA
10
20mA
10
0
0.1
0
0.5 1 2
5
20 50
200
Forward current IF (mA)
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
125
o
Forward current IF(mA)
Collector-emitter saturation voltage
VCE (sat) (V)
Ic= 1mA
2mA
3mA
5mA
7mA
10mA
100
500
o
6
75
Fig.4 Forward Current vs. Forward
Voltage
Ta= 25 C
8
50
Ambient temperature Ta ( C)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
10
25
o
o
0
1
2
3
4
5
6
10mA
7 8
9 10
Collector-emitter voltage VCE (V)
Page : 10 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
160
Collector-emitter saturation voltage
VCE (sat) (V)
Relative current transfer ratio (%)
150
I F= 10mA
VCE= 5V
I F= 100mA
Ic= 1mA
140
120
100
100
50
0
-25
0
25
50
75
80
60
40
20
0
-25
100
0
Ambient temperature Ta ( C)
75
100
Fig.10 Response Time vs. Load
Resistance
-5
200
10
VCE = 10V
100
50
-6
Response time ( s)
10
-7
10
-8
10
-9
10
VCE= 2V
Ic= 2mA
Ta= 25 C
o
tr
20
10
5
tf
td
2
1
ts
0.5
-10
10
0.2
0.1
0.03
-11
10
-25
0
25
50
75
100
o
Ambient temperature Ta ( C)
0.1 0.2 0.5 1
5
10
Test Circuit for Response Time
Vcc
VCE= 5V
Ic= 2mA
Ta= 25 C
0
2
Load resistance R L(k )
Fig.11 Frequency Response
Voltage gain Av (dB)
50
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current
vs. Ambient Temperature
Collector dark current ICEO (A)
25
o
o
Input
RD
RL
Input
Output
Output
10%
o
90%
-5
ts
td
-10
RL= 1k
1k
tr
100
-15
tf
Test Circuit for Frequency Response
Vcc
-20
RD
1
2
5 10 20
100
RL
Output
500 1000
Frequency f (kHz)
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page : 11 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
4 PIN
8 PIN
16 PIN
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 )
BNS-OD-C131/A4
Page : 12 of 12
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