MMBTA92

MMBTA92 PNP High Voltage Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES SOT-23 A z Epitaxial planar die construction. z Complementary NPN type available Min Max A 2.70 3.10 B 1.10 1.50 E K B C D (MMBTA42). Ideal for medium power amplification and switching. G APPLICATIONS z 0.4 Typical 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J H C 1.0 Typical E J D z Dim K 0.1 Typical 2.20 2.60 All Dimensions in mm High voltage driver applications. ORDERING INFORMATION Type No. Marking Package Code MMBTA92 2D SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage -300 V VCEO collector-emitter voltage -300 V VEBO emitter-base voltage -5 V IC collector current (DC) -0.5 A PC Collector dissipation 0.35 W Tj ,Tstg junction and storage temperature -55 to +150 °C ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBTA92 PNP High Voltage Amplifier ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX. UNIT V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0 -300 V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0 -300 V(BR)EBO Emitter-base breakdown voltage IE=-100μA,IC=0 -5 ICBO collector cut-off current IE = 0; VCB = -200V - -0.25 μA IEBO emitter cut-off current IC = 0; VEB = -3V - -0.1 μA hFE DC current gain VCE = -10V; IC= -1mA VCE = -10V;IC= -10mA VCE = -10V;IC= -30mA 25 40 25 VCE(sat) collector-emitter saturation voltage IC = -20mA; IB = -2mA - -0.5 V VBE(sat) base-emitter saturation voltage IC = -20mA; IB = -2mA - -0.9 V Cob Collector output capacitance VCB=-20V,f=1.0MHz - 6.0 pF fT transition frequency IC = -10mA; VCE = -20V; f = 100MHz 50 - MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBTA92 PNP High Voltage Amplifier Device Package Shipping MMBTA92 SOT-23 3000/Tape&Reel ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com