HGB027N10A

HGB027N10A HGP027N10A , P-1 HGK027N10A 100V N-Ch Power MOSFET Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free VDS RDS(on),typ TO-263 RDS(on),typ TO-247 RDS(on),typ TO-220 ID (Sillicon Limited) Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit TO-263 ◇ DC/DC in Telecoms and Inductrial VGS=10V VGS=10V VGS=10V V mW mW mW A 100 2.2 2.4 2.5 248 Drain Pin2 TO-220 Gate Pin 1 Part Number HGB027N10A HGK027N10A HGP027N10A Package Marking TO-263 GB027N10A TO-247 GK027N10A TO-220 GP027N10A TO-247 Absolute Maximum Ratings at T j=25℃ (unless otherwise specified) Parameter Continuous Drain Current (Silicon Limited) Src Pin3 Symbol ID Continuous Drain Current (Package Limited) Drain to Source Voltage VDS Gate to Source Voltage VGS Pulsed Drain Current IDM Avalanche Energy, Single Pulse EAS Power Dissipation PD Operating and Storage Temperature TJ, Tstg Conditions TC=25℃ TC=100℃ TC=25℃ L=0.4mH, TC=25℃ TC=25℃ - Value 248 176 180 100 Unit A ±20 800 720 341 -55 to175 V V A mJ W ℃ Max 60 0.44 Unit ℃/W ℃/W Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Ver 1.0 Symbol RqJA RqJC Apr. 2020 HGB027N10A HGP027N10A , P-2 HGK027N10A Electrical Characteristics at T j=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Conditions Value min typ max Unit Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250mA 100 - - Gate Threshold Voltage VGS(th) VGS=VDS, ID=250mA 2.0 3.0 4.0 Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=100V, Tj=25℃ - - 1 VGS=0V, VDS=100V, Tj=100℃ - - 100 Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V Drain to Source on Resistance Drain to Source on Resistance ±100 nA 2.7 mW 2.9 mW V mA - - RDS(on) VGS=10V, ID=20A TO-263 - 2.2 RDS(on) VGS=10V, ID=20A TO-247 - 2.4 Drain to Source on Resistance RDS(on) VGS=10V, ID=20A TO-220 - 2.5 3 Transconductance gfs VDS=5V, ID=20A - 75 - mW S Gate Resistance RG VGS=0V, VDS Open, f=1MHz - 1.5 - W - 7684 - - 114 - - 21 - - 106 - - 24 - 22 - Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg(10V) Gate to Source Charge Qgs VGS=0V, VDS=50V, f=1MHz VDD=50V, ID=20A, VGS=10V pF nC Gate to Drain (Miller) Charge Qgd - Turn on Delay Time td(on) - 28 - Rise time tr - 22 - Turn off Delay Time td(off) - 52 - Fall Time tf - 13 - - 0.9 1.2 V - 65 - ns - 455 - nC VDD=50V, ID=20A, VGS=10V, RG=10W, ns Reverse Diode Characteristics Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Ver 1.0 VGS=0V, IF=20A VR=50V, IF=20A, dIF/dt=500A/ms Apr. 2020 HGB027N10A HGP027N10A , Fig 1. Typical Output Characteristics P-3 HGK027N10A Figure 2. On-Resistance vs. Gate-Source Voltage 8 120 10V 5V ID=20A 100 4.5V 6 80 RDS(ON) (mW) 125°C ID (A) 60 40 4 2 25°C Vgs=4V 20 0 0 0 1 2 2 3 4 6 8 10 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 5 2.2 ID=20A 2 Normalized On-Resistance 4 VGS=6V RDS(ON) (mW) 3 VGS=10V 2 1 VGS=10V 1.8 1.6 1.4 VGS=6V 1.2 1 0 0.8 0 5 10 15 20 0 25 50 ID (A) 75 100 125 150 175 Temperature (°C) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage 20 1.E+02 VDS=5V 1.E+01 15 125°C 1.E+00 125℃ ID(A) 25℃ IS (A) 10 25°C 1.E-01 5 1.E-02 0 1.E-03 2 3 4 VGS(V) Ver 1.0 5 0.2 0.4 0.6 0.8 1.0 VSD (V) Apr. 2020 HGB027N10A HGP027N10A , Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage P-4 HGK027N10A Figure 8. Typical Capacitance vs. Drain-to-Source Voltage 10000 10 VDS=50V ID=20A Ciss 8 Capacitance (pF) 1000 VGS (V) 6 4 Coss 100 Crss 10 2 0 1 0 25 50 75 100 125 0 20 40 80 100 VDS (V) Qg (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximun Drain Current vs. Case Temperature 1000.0 300 RDS(ON) limited 10ms 100.0 Current rating ID(A) 100ms 1ms 10.0 10ms ID (Amps) 60 DC 10s TJ(Max)=175°C TC=25°C 1.0 0.1 Silicon Limited 200 Package Limited 100 0 0.0 0.01 0.1 1 10 100 1000 0 25 VDS (V) 50 75 100 125 150 175 TAmbient(℃) Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient Duty=Ton/T Peak TJ=TC+PDM.ZqJC.RqJC RqJC=0.44℃/W 1 Duty=0.5 ZqJA Normalized Transient Thermal Resistance 0.3 0.1 0.05 0.1 0.01 0.03 0.01 single pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Ver 1.0 Apr. 2020 HGB027N10A HGP027N10A , HGK027N10A P-5 Inductive switching Test Gate Charge Test Uclamped Inductive Switching (UIS) Test Diode Recovery Test Ver 1.0 Apr. 2020 HGB027N10A HGP027N10A , HGK027N10A P-6 Package Outline TO-220, 3 leads Ver 1.0 Apr. 2020 HGB027N10A HGP027N10A , HGK027N10A P-6 Package Outline TO-263, 3 leads Ver 1.0 Apr. 2020 HGB027N10A HGP027N10A , HGK027N10A P-6 Package Outline TO-247, 3 leads Ver 1.0 Apr. 2020