AT25DF011
1-Mbit, 1.65V Minimum
SPI Serial Flash Memory with Dual-Read Support
Features
Single 1.65V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual Output Read
104MHz Maximum Operating Frequency
Clock-to-Output (tV) of 6 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Small (256-Byte) Page Erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
1.5ms Typical Page Program (256 Bytes) Time
50ms Typical 4-Kbyte Block Erase Time
350ms Typical 32-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
200nA Ultra Deep Power Down current (Typical)
5µA Deep Power-Down Current (Typical)
25uA Standby current (Typical)
4.5mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
8-lead TSSOP Package
8-ball WLCSP(1)
Note: 1. Contact factory for availability.
DS-25DF011–032F–5/2017
1.
Description
The Adesto® AT25DF011 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer
based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF011, with its page erase granularity it is ideal for data storage as well, eliminating the
need for additional data storage devices.
The erase block sizes of the AT25DF011 have been optimized to meet the needs of today's code and data storage applications.
By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules
and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that
occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space
efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device
density.
The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as
unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the AT25DF011 supports read, program, and erase operations with a
wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.
2.
Pin Descriptions and Pinouts
Table 2-1.
Symbol
CS
SCK
Pin Descriptions
Name and Function
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-Down
mode), and the SO pin will be in a high-impedance state. When the device is deselected, data
will not be accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation such as
a program or erase cycle, the device will not enter the standby mode until the completion of the
operation.
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow
of data to and from the device. Command, address, and input data present on the SI pin is
always latched in on the rising edge of SCK, while output data on the SO pin is always clocked
out on the falling edge of SCK.
Asserted
State
Type
Low
Input
-
Input
-
Input/
Output
-
Input/
Output
SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data
input including command and address sequences. Data on the SI pin is always latched in on the
rising edge of SCK.
SI (I/O0)
With the Dual-Output Read commands, the SI Pin becomes an output pin (I/O0) in conjunction
with other pins to allow two bits of data on (I/O1-0) to be clocked out on every falling edge of SCK.
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin will be referenced as the SI
pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O0.
Data present on the SI pin will be ignored whenever the device is deselected (CS is deasserted).
SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK.
SO (I/O1)
With the Dual-Output Read commands, the SO Pin remains an output pin (I/O1) in conjunction
with other pins to allow two bits of data on (I/O1-0) to be clocked out on every falling edge of SCK.
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin will be referenced as the
SO pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as
I/O1. The SO pin will be in a high-impedance state whenever the device is deselected (CS is
deasserted).
AT25DF011
DS-25DF011–032F–5/2017
2
Table 2-1.
Symbol
Pin Descriptions (Continued)
Name and Function
WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer
to “Protection Commands and Features” on page 12 for more details on protection features and
the WP pin.
WP
The WP pin is internally pulled-high and may be left floating if hardware controlled protection will
not be used. However, it is recommended that the WP pin also be externally connected to VCC
whenever possible.
Asserted
State
Type
Low
Input
Low
Input
-
Power
-
Power
HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or
resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the
SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold
condition to start. A Hold condition pauses serial communication only and does not have an
effect on internally self-timed operations such as a program or erase cycle. Please refer to
“Hold” on page 27 for additional details on the Hold operation.
HOLD
The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be
used. However, it is recommended that the HOLD pin also be externally connected to VCC
whenever possible.
DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.
VCC
Operations at invalid VCC voltages may produce spurious results and should not be attempted.
GROUND: The ground reference for the power supply. GND should be connected to the system
ground.
GND
Table 2-2.
Pinouts
Figure 2-1. 8-SOIC Top View
CS
SO
WP
GND
Figure 2-3. 8-UDFN (Top View)
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
1
8
2
7
3
6
4
5
Figure 2-4. WLCSP Bottom View(1)
Figure 2-2. 8-TSSOP Top View
SCK
CS
SO
WP
GND
1
2
3
4
VCC
HOLD
SCK
SI
8
7
6
5
VCC
HOLD
SCK
SI
WP
SI
SO
HOLD
GND
Vcc
CS
A1
Note: 1. Contact info@adestotech.com for manufacturing flow and availability
.
AT25DF011
DS-25DF011–032F–5/2017
3
Block Diagram
&21752/$1'
3527(&7,21 /2*,&
&6
6&.
6,,2
62
:3
+2/'
,2%8))(56
$1'/$7&+(6
65$0
'$7$
%8))(5
,17(5)$&(
&21752/
$1'
/2*,&
很抱歉,暂时无法提供与“AT25DF011-XMHNGU-B”相匹配的价格&库存,您可以联系我们找货
免费人工找货