74AHCT1G04GW,165

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 74AHC1G04; 74AHCT1G04 Inverter Rev. 9 — 10 March 2015 Product data sheet 1. General description 74AHC1G04 and 74AHCT1G04 are high-speed Si-gate CMOS devices. They provide an inverting buffer. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features and benefits       Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Multiple package options ESD protection:  HBM JESD22-A114E: exceeds 2000 V  MM JESD22-A115-A: exceeds 200 V  CDM JESD22-C101C: exceeds 1000 V  Specified from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number 74AHC1G04GW Package Temperature range Name Description Version 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 40 C to +125 C SC-74A plastic surface-mounted package; 5 leads SOT753 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1  1.45  0.5 mm SOT886 74AHCT1G04GW 74AHC1G04GV 74AHCT1G04GV 74AHC1G04GM 74AHCT1G04GM 74AHC1G04; 74AHCT1G04 NXP Semiconductors Inverter 4. Marking Table 2. Marking codes Type number Marking[1] 74AHC1G04GW AC 74AHC1G04GV A04 74AHC1G04GM AC 74AHCT1G04GW CC 74AHCT1G04GV C04 74AHCT1G04GM CC [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram  $ <     < $ PQD Fig 1. PQD Logic symbol Fig 2. PQD IEC logic symbol Fig 3. Logic diagram 6. Pinning information 6.1 Pinning $+&* $+&7* $+&* $+&7* QF  $  *1'   9&&  < QF   9&& $   QF *1'   < DDD 7UDQVSDUHQWWRSYLHZ DDI Fig 4. Pin configuration SOT353-1 and SOT753 74AHC_AHCT1G04 Product data sheet Fig 5. Pin configuration SOT886 All information provided in this document is subject to legal disclaimers. Rev. 9 — 10 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 14 74AHC1G04; 74AHCT1G04 NXP Semiconductors Inverter 6.2 Pin description Table 3. Pin description Symbol Pin n.c. Description SOT353-1 and SOT753 SOT886 1 1 not connected A 2 2 data input GND 3 3 ground (0 V) Y 4 4 data output n.c. - 5 not connected VCC 5 6 supply voltage 7. Functional description Table 4. Function table H = HIGH voltage level; L = LOW voltage level Input Output A Y L H H L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC Conditions Min Max Unit supply voltage 0.5 +7.0 V VI input voltage 0.5 +7.0 V 20 - mA - 20 mA - 25 mA 75 mA IIK input clamping current VI < 0.5 V IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V IO output current 0.5 V < VO < VCC + 0.5 V ICC supply current - IGND ground current 75 - mA Tstg storage temperature 65 +150 C - 250 mW total power dissipation Ptot [1] [2] Tamb = 40 C to +125 C [1] [2] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For both TSSOP5 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 package: above 118 C the value of Ptot derates linearly with 7.8 mW/K. 74AHC_AHCT1G04 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 10 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 14 74AHC1G04; 74AHCT1G04 NXP Semiconductors Inverter 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74AHC1G04 Min Typ 74AHCT1G04 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V VI input voltage 0 - 5.5 0 - 5.5 V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 +25 +125 40 +25 +125 C t/V input transition rise and fall rate VCC = 3.3 V  0.3 V - - 100 - - - ns/V VCC = 5.0 V  0.5 V - - 20 - - 20 ns/V 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max VCC = 2.0 V 1.5 - - 1.5 - 1.5 - V VCC = 3.0 V 2.1 - - 2.1 - 2.1 - V VCC = 5.5 V 3.85 - - 3.85 - 3.85 - V VCC = 2.0 V - - 0.5 - 0.5 - 0.5 V VCC = 3.0 V - - 0.9 - 0.9 - 0.9 V VCC = 5.5 V - - 1.65 - 1.65 - 1.65 V HIGH-level VI = VIH or VIL output voltage IO = 50 A; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = 50 A; VCC = 3.0 V 2.9 3.0 - 2.9 - 2.9 - V IO = 50 A; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = 4.0 mA; VCC = 3.0 V 2.58 - - 2.48 - 2.40 - V IO = 8.0 mA; VCC = 4.5 V 74AHC1G04 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage 3.94 - - 3.8 - 3.70 - V LOW-level VI = VIH or VIL output voltage IO = 50 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 A; VCC = 3.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 3.0 V - - 0.36 - 0.44 - 0.55 V IO = 8.0 mA; VCC = 4.5 V - - 0.36 - 0.44 - 0.55 V - - 0.1 - 1.0 - 2.0 A II input leakage current ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.0 - 10 - 40 A CI input capacitance - 1.5 10 - 10 - 10 pF 74AHC_AHCT1G04 Product data sheet VI = 5.5 V or GND; VCC = 0 V to 5.5 V All information provided in this document is subject to legal disclaimers. Rev. 9 — 10 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 14 74AHC1G04; 74AHCT1G04 NXP Semiconductors Inverter Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max 74AHCT1G04 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V VOH HIGH-level VI = VIH or VIL; VCC = 4.5 V output voltage IO = 50 A 4.4 4.5 - 4.4 - 4.4 - V 3.94 - - 3.8 - 3.70 - V IO = 8.0 mA VOL LOW-level VI = VIH or VIL; VCC = 4.5 V output voltage IO = 50 A IO = 8.0 mA 0 0.1 - 0.1 - 0.1 V - 0.36 - 0.44 - 0.55 V - - 0.1 - 1.0 - 2.0 A II input leakage current ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.0 - 10 - 40 A ICC additional per input pin; VI = 3.4 V; supply current other inputs at VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.35 - 1.5 - 1.5 mA CI input capacitance - 1.5 10 - 10 - 10 pF 74AHC_AHCT1G04 Product data sheet VI = 5.5 V or GND; VCC = 0 V to 5.5 V - All information provided in this document is subject to legal disclaimers. Rev. 9 — 10 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 14 74AHC1G04; 74AHCT1G04 NXP Semiconductors Inverter 11. Dynamic characteristics Table 8. Dynamic characteristics GND = 0 V; tr = tf =  3.0 ns. For test circuit see Figure 7. Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max - 4.3 7.1 1.0 8.5 1.0 11.0 ns - 6.1 10.6 1.0 12 1.0 14.5 ns - 3.1 5.5 1.0 6.5 1.0 7.0 ns - 4.5 7.5 1.0 8.5 1.0 9.5 ns - 15 - - - - - pF - 3.4 6.7 1.0 7.5 1.0 8.5 ns - 4.9 7.7 1.0 8.5 1.0 10.0 ns - 16 - - - - - pF 74AHC1G04 tpd propagation delay A to Y; see Figure 6 VCC = 3.0 V to 3.6 V [1] [2] CL = 15 pF CL = 50 pF VCC = 4.5 V to 5.5 V [3] CL = 15 pF CL = 50 pF CPD power dissipation capacitance per buffer; CL = 50 pF; f = 1 MHz; VI = GND to VCC [4] A to Y; see Figure 6 [1] 74AHCT1G04 tpd propagation delay VCC = 4.5 V to 5.5 V [3] CL = 15 pF CL = 50 pF CPD power dissipation capacitance per buffer; CL = 50 pF; f = 1 MHz; VI = GND to VCC [1] tpd is the same as tPLH and tPHL. [2] Typical values are measured at VCC = 3.3 V. [4] [3] Typical values are measured at VCC = 5.0 V. [4] CPD is used to determine the dynamic power dissipation PD (W). PD = CPD  VCC2  fi +  (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; (CL  VCC2  fo) = sum of outputs. 74AHC_AHCT1G04 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 10 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 14 74AHC1G04; 74AHCT1G04 NXP Semiconductors Inverter 12. Waveforms $LQSXW 90 W3+/ W3/+ 90