74HCT1G125GW,165

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 74HC1G125; 74HCT1G125 Bus buffer/line driver; 3-state Rev. 05 — 23 December 2005 Product data sheet 1. General description The 74HC1G125; 74HCT1G125 is a high-speed, Si-gate CMOS device. The 74HC1G125; 74HCT1G125 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (pin OE). A HIGH level at pin OE causes the output to assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC125 and 74HCT125. 2. Features ■ ■ ■ ■ ■ ■ Wide supply voltage range from 2.0 V to 6.0 V Symmetrical output impedance High noise immunity Low power consumption Balanced propagation delays ESD protection: ◆ HBM EIA/JESD22-A114-C exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ■ Very small 5 pins packages ■ Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. Symbol Parameter Conditions Min Typ Max Unit - 9 - ns 74HC1G125 tPHL, tPLH propagation delay A to Y VCC = 5 V; CL = 15 pF Ci input capacitance CPD power dissipation capacitance VI = GND to VCC [1] - 1.5 - pF - 30 - pF 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state Table 1: Quick reference data …continued GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. Symbol Parameter Conditions Min Typ Max Unit - 10 - ns - 1.5 - pF - 27 - pF 74HCT1G125 tPHL, tPLH propagation delay A to Y VCC = 5 V; CL = 15 pF Ci input capacitance power dissipation capacitance CPD [1] VI = GND to VCC − 1.5 V [1] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. 4. Ordering information Table 2: Ordering information Type number Package Temperature range Name Description Version 74HC1G125GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 74HC1G125GV −40 °C to +125 °C SC-74A plastic surface mounted package; 5 leads SOT753 74HCT1G125GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 74HCT1G125GV −40 °C to +125 °C SC-74A plastic surface mounted package; 5 leads SOT753 74HC1G125 74HCT1G125 5. Marking Table 3: Marking Type number Marking code 74HC1G125GW HM 74HC1G125GV H25 74HCT1G125GW TM 74HCT1G125GV T25 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 2 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 6. Functional diagram 2 A Y 4 2 4 1 1 OE EN mna119 mna118 Fig 1. Logic symbol Fig 2. IEC logic symbol Y A OE mna120 Fig 3. Logic diagram 7. Pinning information 7.1 Pinning 74HC1G125GV 74HCT1G125GV 74HC1G125GW 74HCT1G125GW OE 1 A 2 GND 3 5 4 VCC Y OE 1 A 2 GND 3 5 VCC 4 Y 001aad949 001aad948 Fig 4. Pin configuration TSSOP5 Fig 5. Pin configuration SC-74A 7.2 Pin description Table 4: Pin description Symbol Pin Description OE 1 output enable input (active LOW) A 2 data input GND 3 ground (0 V) Y 4 data output VCC 5 supply voltage 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 3 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 8. Functional description 8.1 Function table Table 5: Function table [1] Control Input Output OE A Y L L L L H H H X Z [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. 9. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VI < −0.5 V or VI > VCC + 0.5 V Unit −0.5 +7.0 V - ±20 mA [1] - ±20 mA [1] - ±35 mA IIK input clamping current IOK output clamping current VO < −0.5 V or VO > VCC + 0.5 V IO output current ICC quiescent supply current - 70 mA IGND ground current - −70 mA Tstg storage temperature −65 +150 °C - 200 mW Ptot total power dissipation VO = −0.5 V to (VCC + 0.5 V) Tamb = −40 °C to +125 °C [2] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] Above 55 °C the value of Ptot derates linearly with 2.5 mW/K. 74HC_HCT1G125_5 Product data sheet Max [1] supply voltage VCC Min © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 4 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 10. Recommended operating conditions Table 7: Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit 2.0 5.0 6.0 V 74HC1G125 VCC supply voltage VI input voltage 0 - VCC V VO output voltage 0 - VCC V Tamb ambient temperature −40 +25 +125 °C tr, tf input rise and fall times VCC = 2.0 V - - 1000 ns VCC = 4.5 V - - 500 ns VCC = 6.0 V - - 400 ns 4.5 5.0 5.5 V 74HCT1G125 VCC supply voltage VI input voltage 0 - VCC V VO output voltage 0 - VCC V Tamb ambient temperature −40 +25 +125 °C tr, tf input rise and fall times - - 500 ns VCC = 4.5 V 11. Static characteristics Table 8: Static characteristics 74HC1G125 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = −40 °C to +85 VIH VIL VOH VOL Conditions Min Typ Max Unit VCC = 2.0 V 1.5 1.2 - V VCC = 4.5 V 3.15 2.4 - V VCC = 6.0 V 4.2 3.2 - V VCC = 2.0 V - 0.8 0.5 V VCC = 4.5 V - 2.1 1.35 V VCC = 6.0 V - 2.8 1.8 V IO = −20 µA; VCC = 2.0 V 1.9 2.0 - V IO = −20 µA; VCC = 4.5 V 4.4 4.5 - V °C [1] HIGH-state input voltage LOW-state input voltage HIGH-state output voltage LOW-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 6.0 V 5.9 6.0 - V IO = −6.0 mA; VCC = 4.5 V 3.84 4.32 - V IO = −7.8 mA; VCC = 6.0 V 5.34 5.81 - V IO = 20 µA; VCC = 2.0 V - 0 0.1 V IO = 20 µA; VCC = 4.5 V - 0 0.1 V IO = 20 µA; VCC = 6.0 V - 0 0.1 V IO = 6.0 mA; VCC = 4.5 V - 0.15 0.33 V IO = 7.8 mA; VCC = 6.0 V - 0.16 0.33 V VI = VIH or VIL 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 5 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state Table 8: Static characteristics 74HC1G125 …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit ILI input leakage current VI = VCC or GND; VCC = 6.0 V - - 1.0 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 6.0 V - - 5 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 10 µA Ci input capacitance - 1.5 - pF VCC = 2.0 V 1.5 - - V VCC = 4.5 V 3.15 - - V VCC = 6.0 V 4.2 - - V VCC = 2.0 V - - 0.5 V VCC = 4.5 V - - 1.35 V VCC = 6.0 V - - 1.8 V Tamb = −40 °C to +125 °C HIGH-state input voltage VIH LOW-state input voltage VIL VOH VOL HIGH-state output voltage LOW-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 2.0 V 1.9 - - V IO = −20 µA; VCC = 4.5 V 4.4 - - V IO = −20 µA; VCC = 6.0 V 5.9 - - V IO = −6.0 mA; VCC = 4.5 V 3.7 - - V IO = −7.8 mA; VCC = 6.0 V 5.2 - - V IO = 20 µA; VCC = 2.0 V - - 0.1 V IO = 20 µA; VCC = 4.5 V - - 0.1 V VI = VIH or VIL IO = 20 µA; VCC = 6.0 V - - 0.1 V IO = 6.0 mA; VCC = 4.5 V - - 0.4 V IO = 7.8 mA; VCC = 6.0 V - - 0.4 V ILI input leakage current VI = VCC or GND; VCC = 6.0 V - - 1.0 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 6.0 V - - 10 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 20 µA [1] All typical values are measured at Tamb = 25 °C. 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 6 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state Table 9: Static characteristics 74HCT1G125 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = −40 °C to +85 Conditions Min Typ Max Unit °C [1] VIH HIGH-state input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - V VIL LOW-state input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 V VOH HIGH-state output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA 4.4 4.5 - V IO = −6.0 mA 3.84 4.32 - V IO = 20 µA - 0 0.1 V IO = 6.0 mA LOW-state output voltage VOL VI = VIH or VIL; VCC = 4.5 V - 0.16 0.33 V ILI input leakage current VI = VCC or GND; VCC = 5.5 V - - 1.0 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 5.5 V - - 5 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 10 µA ∆ICC additional quiescent supply VI = VCC − 2.1 V; IO = 0 A; current VCC = 4.5 V to 5.5 V - - 500 µA Ci input capacitance - 1.5 - pF Tamb = −40 °C to +125 °C VIH HIGH-state input voltage VCC = 4.5 V to 5.5 V 2.0 - - V VIL LOW-state input voltage VCC = 4.5 V to 5.5 V - - 0.8 V VOH HIGH-state output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA 4.4 - - V IO = −6.0 mA 3.7 - - V LOW-state output voltage VOL VI = VIH or VIL; VCC = 4.5 V IO = 20 µA - - 0.1 V IO = 6.0 mA - - 0.4 V ILI input leakage current VI = VCC or GND; VCC = 5.5 V - - 1.0 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 5.5 V - - 10 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 20 µA ∆ICC additional quiescent supply VI = VCC − 2.1 V; IO = 0 A; current VCC = 4.5 V to 5.5 V - - 850 µA [1] All typical values are measured at Tamb = 25 °C. 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 7 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 12. Dynamic characteristics Table 10: Dynamic characteristics 74HC1G125 Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 8 Symbol Parameter Tamb = −40 °C to +85 tPHL, tPLH tPZH, tPZL tPHZ, tPLZ Conditions Min Typ Max Unit VCC = 2.0 V - 24 125 ns VCC = 4.5 V - 10 25 ns VCC = 5 V; CL = 15 pF - 9 - ns VCC = 6.0 V - 8 21 ns °C [1] propagation delay A to Y 3-state output enable time OE to Y 3-state output disable time OE to Y see Figure 6 see Figure 7 VCC = 2.0 V - 19 155 ns VCC = 4.5 V - 9 31 ns VCC = 6.0 V - 7 26 ns VCC = 2.0 V - 18 155 ns VCC = 4.5 V - 12 31 ns - 11 26 ns - 30 - pF VCC = 2.0 V - - 150 ns VCC = 4.5 V - - 30 ns VCC = 6.0 V - - 26 ns VCC = 2.0 V - - 190 ns VCC = 4.5 V - - 38 ns VCC = 6.0 V - - 32 ns VCC = 2.0 V - - 190 ns VCC = 4.5 V - - 38 ns VCC = 6.0 V - - 32 ns see Figure 7 VCC = 6.0 V power dissipation capacitance CPD [2] VI = GND to VCC Tamb = −40 °C to +125 °C tPHL, tPLH tPZH, tPZL tPHZ, tPLZ propagation delay A to Y 3-state output enable time OE to Y 3-state output disable time OE to Y see Figure 6 see Figure 7 see Figure 7 [1] All typical values are measured at Tamb = 25 °C. [2] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 8 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state Table 11: Dynamic characteristics 74HCT1G125 Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 8 Symbol Parameter Conditions Min Typ Max Unit VCC = 4.5 V - 11 30 ns Tamb = −40 °C to +85 °C [1] tPHL, tPLH propagation delay A to Y see Figure 6 VCC = 5 V; CL = 15 pF - 10 - ns tPZH, tPZL 3-state output enable time OE to Y VCC = 4.5 V; see Figure 7 - 10 35 ns tPHZ, tPLZ 3-state output disable time OE to Y VCC = 4.5 V; see Figure 7 - 11 31 ns CPD power dissipation capacitance VI = GND to VCC − 1.5 V - 27 - pF [2] Tamb = −40 °C to +125 °C tPHL, tPLH propagation delay A to Y VCC = 4.5 V; see Figure 6 - - 36 ns tPZH, tPZL 3-state output enable time OE to Y VCC = 4.5 V; see Figure 7 - - 42 ns tPHZ, tPLZ 3-state output disable time OE to Y VCC = 4.5 V; see Figure 7 - - 38 ns [1] All typical values are measured at Tamb = 25 °C. [2] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 9 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 13. Waveforms VI VM A input GND t PLH t PHL Y output VM 001aad070 Measurement points are given in Table 12. Fig 6. Propagation delay data input (A) to output (Y) VI OE input VM GND tPLZ tPZL VCC output LOW-to-OFF OFF-to-LOW VM VX VOL tPHZ VOH tPZH VY output HIGH-to-OFF OFF-to-HIGH VM GND outputs enabled outputs disabled outputs enabled mna644 Measurement points are given in Table 12. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 7. Enable and disable times Table 12: Measurement points Type Input Output VM VM VX VY 74HC1G125 0.5VCC 0.5VCC VOL + 0.3 V VOH − 0.3 V 74HCT1G125 1.3 V 1.3 V VOL + 0.3 V VOH − 0.3 V 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 10 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state VI tW 90 % negative pulse VM 0V tf tr tr tf VI 90 % positive pulse 0V VM 10 % VM VM 10 % tW VCC VCC PULSE GENERATOR VI VO RL S1 open DUT RT CL 001aad983 Test data is given in Table 13. Definitions for test circuit: RT = Termination resistance should be equal to the output impedance Zo of the pulse generator CL = Load capacitance including jig and probe capacitance RL = Load resistor S1 = Test selection switch Fig 8. Load circuitry for measuring switching times Table 13: Test data Type Input Load VI tr, tf CL RL tPLH, tPHL tPZH, tPHZ tPZL, tPLZ 74HC1G125 VCC 6 ns 15 pF, 50 pF 1 kΩ open GND VCC 74HCT1G125 3V 6 ns 15 pF, 50 pF 1 kΩ open GND VCC 74HC_HCT1G125_5 Product data sheet S1 position © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 11 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 14. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm E D SOT353-1 A X c y HE v M A Z 5 4 A2 A (A3) A1 θ 1 Lp 3 L e w M bp detail X e1 0 1.5 3 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e e1 HE L Lp v w y Z(1) θ mm 1.1 0.1 0 1.0 0.8 0.15 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 1.3 2.25 2.0 0.425 0.46 0.21 0.3 0.1 0.1 0.60 0.15 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC JEITA MO-203 SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 9. Package outline SOT353-1 (TSSOP5) 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 12 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state Plastic surface mounted package; 5 leads SOT753 D E B y A X HE 5 v M A 4 Q A A1 c 1 2 3 Lp detail X bp e w M B 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.100 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT753 JEITA SC-74A EUROPEAN PROJECTION ISSUE DATE 02-04-16 Fig 10. Package outline SOT753 (SC-74A) 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 13 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 15. Abbreviations Table 14: Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model TTL Transistor-Transistor Logic MM Machine Model 16. Revision history Table 15: Revision history Document ID Release date 74HC_HCT1G125_5 20051223 Modifications: • • Data sheet status Change notice Doc. number Supersedes Product data sheet ECN05_085 - 74HC_HCT1G125_4 The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. In Table 6 “Limiting values” – IO: changed max value ±12.5 into ±35 – ICC: changed max value 25 into 70 – IGND: changed max value −25 into −70 • In Table 8 “Static characteristics 74HC1G125”; Tamb = −40 °C to +85 °C – VOH: changed condition IO = −2.0 mA into IO = −6.0 mA and min value from 4.13 into 3.84 – VOH: changed condition IO = −2.6 mA into IO = −7.8 mA and min value from 5.63 into 5.34 – VOL: changed condition IO = 2.0 mA into IO = 6.0 mA – VOL: changed condition IO = 2.6 mA into IO = 7.8 mA • In Table 8 “Static characteristics 74HC1G125”; Tamb = −40 °C to +125 °C – VOH: changed condition IO = −2.0 mA into IO = −6.0 mA – VOL: changed condition IO = 2.0 mA into IO = 6.0 mA • In Table 9 “Static characteristics 74HCT1G125”; Tamb = −40 °C to +85 °C – VOH: changed condition IO = −2.0 mA into IO = −6.0 mA and min value from 4.13 into 3.84 – VOL: changed condition IO = 2.0 mA into IO = 6.0 mA and typ value from 0.15 into 0.16 • In Table 9 “Static characteristics 74HCT1G125”; Tamb = −40 °C to +125 °C – VOH: changed condition IO = −2.0 mA into IO = −6.0 mA – VOL: changed condition IO = 2.0 mA into IO = 6.0 mA 74HC_HCT1G125_4 20040727 Product specification - 9397 750 13725 74HC_HCT1G125_3 74HC_HCT1G125_3 20020517 Product specification - 9397 750 09718 74HC_HCT1G125_2 74HC_HCT1G125_2 20010302 Product specification - 9397 750 07966 74HC_HCT1G125_1 74HC_HCT1G125_1 19981110 Product specification - 9397 750 03693 - 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 14 of 16 74HC1G125; 74HCT1G125 Philips Semiconductors Bus buffer/line driver; 3-state 17. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 18. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 20. Trademarks 19. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 21. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 74HC_HCT1G125_5 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 05 — 23 December 2005 15 of 16 Philips Semiconductors 74HC1G125; 74HCT1G125 Bus buffer/line driver; 3-state 22. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 9 10 11 12 13 14 15 16 17 18 19 20 21 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 December 2005 Document number: 74HC_HCT1G125_5 Published in The Netherlands