74AHC1G14GW,165

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 74AHC1G14; 74AHCT1G14 Inverting Schmitt trigger Rev. 8 — 13 January 2016 Product data sheet 1. General description 74AHC1G14 and 74AHCT1G14 are high-speed Si-gate CMOS devices. They provide an inverting buffer function with Schmitt trigger action. These devices are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features and benefits  Symmetrical output impedance  High noise immunity  ESD protection:  HBM JESD22-A114E: exceeds 2000 V  MM JESD22-A115-A: exceeds 200 V  CDM JESD22-C101C: exceeds 1000 V  Low power dissipation  Balanced propagation delays  SOT353-1 and SOT753 package options  Specified from 40 C to +125 C 3. Applications  Wave and pulse shapers  Astable multivibrators  Monostable multivibrators 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74AHC1G14GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 40 C to +125 C SC-74A plastic surface-mounted package; 5 leads SOT753 74AHCT1G14GW 74AHC1G14GV 74AHCT1G14GV 74AHC1G14; 74AHCT1G14 NXP Semiconductors Inverting Schmitt trigger 5. Marking Table 2. Marking codes Type number Marking code[1] 74AHC1G14GW AF 74AHCT1G14GW CF 74AHC1G14GV A14 74AHCT1G14GV C14 [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram $  <    PQD Fig 1. Logic symbol $ < PQD PQD Fig 2. IEC logic symbol Fig 3. Logic diagram 7. Pinning information 7.1 Pinning $+&* $+&7* QF  $  *1'   9&&  < DDI Fig 4. Pin configuration 7.2 Pin description Table 3. Pin description Symbol Pin Description n.c. 1 not connected A 2 data input GND 3 ground (0 V) Y 4 data output VCC 5 supply voltage 74AHC_AHCT1G14 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 13 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 2 of 17 74AHC1G14; 74AHCT1G14 NXP Semiconductors Inverting Schmitt trigger 8. Functional description Table 4. Function table H = HIGH voltage level; L = LOW voltage level Input Output A Y L H H L 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC VI supply voltage 0.5 +7.0 V input voltage 0.5 +7.0 V IIK input clamping current VI < 0.5 V 20 - mA IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V - 20 mA 0.5 V < VO < VCC + 0.5 V [1] IO output current - 25 mA ICC supply current - 75 mA IGND ground current 75 - mA Tstg storage temperature 65 +150 C - 250 mW total power dissipation Ptot Tamb = 40 C to +125 C [2] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For both TSSOP5 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. 10. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74AHC1G14 74AHCT1G14 Unit Min Typ Max Min Typ Max 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 - 5.5 0 - 5.5 V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 +25 +125 40 +25 +125 C VCC supply voltage VI 74AHC_AHCT1G14 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 13 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 3 of 17 74AHC1G14; 74AHCT1G14 NXP Semiconductors Inverting Schmitt trigger 11. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max HIGH-level VI = VT+ or VT output voltage IO = 50 A; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = 50 A; VCC = 3.0 V 2.9 3.0 - 2.9 - 2.9 - V IO = 50 A; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = 4.0 mA; VCC = 3.0 V 2.58 - - 2.48 - 2.40 - V IO = 8.0 mA; VCC = 4.5 V 3.94 - - 3.8 - 3.70 - V LOW-level VI = VT+ or VT output voltage IO = 50 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 A; VCC = 3.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 3.0 V - - 0.36 - 0.44 - 0.55 V IO = 8.0 mA; VCC = 4.5 V - - 0.36 - 0.44 - 0.55 V - - 0.1 - 1.0 - 2.0 A For type 74AHC1G14 VOH VOL II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.0 - 10 - 40 A CI input capacitance - 1.5 10 - 10 - 10 pF 4.4 4.5 - 4.4 - 4.4 - V 3.94 - - 3.8 - 3.70 - V - 0 0.1 - 0.1 - 0.1 V - - 0.36 - 0.44 - 0.55 V - - 0.1 - 1.0 - 2.0 A For type 74AHCT1G14 VOH HIGH-level VI = VT+ or VT; VCC = 4.5 V output voltage IO = 50 A IO = 8.0 mA VOL LOW-level VI = VT+ or VT; VCC = 4.5 V output voltage IO = 50 A IO = 8.0 mA II input leakage current ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.0 - 10 - 40 A ICC additional per input pin; VI = 3.4 V; supply current other inputs at VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.35 - 1.5 - 1.5 mA CI input capacitance - 1.5 10 - 10 - 10 pF 74AHC_AHCT1G14 Product data sheet VI = 5.5 V or GND; VCC = 0 V to 5.5 V All information provided in this document is subject to legal disclaimers. Rev. 8 — 13 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 4 of 17 74AHC1G14; 74AHCT1G14 NXP Semiconductors Inverting Schmitt trigger 11.1 Transfer characteristics Table 8. Transfer characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). See Figure 7 and Figure 8. Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max VCC = 3.0 V - - 2.2 - 2.2 - 2.2 V VCC = 4.5 V - - 3.15 - 3.15 - 3.15 V For type 74AHC1G14 VT+ VT VH positive-going threshold voltage negative-going threshold voltage hysteresis voltage VCC = 5.5 V - - 3.85 - 3.85 - 3.85 V VCC = 3.0 V 0.9 - - 0.9 - 0.9 - V VCC = 4.5 V 1.35 - - 1.35 - 1.35 - V VCC = 5.5 V 1.65 - - 1.65 - 1.65 - V VCC = 3.0 V 0.3 - 1.2 0.3 1.2 0.25 1.2 V VCC = 4.5 V 0.4 - 1.4 0.4 1.4 0.35 1.4 V VCC = 5.5 V 0.5 - 1.6 0.5 1.6 0.45 1.6 V For type 74AHCT1G14 VT+ VT VH positive-going threshold voltage VCC = 4.5 V - - 2.0 - 2.0 - 2.0 V VCC = 5.5 V - - 2.0 - 2.0 - 2.0 V negative-going threshold voltage VCC = 4.5 V 0.5 - - 0.5 - 0.5 - V VCC = 5.5 V 0.6 - - 0.6 - 0.6 - V hysteresis voltage VCC = 4.5 V 0.4 - 1.4 0.4 1.4 0.35 1.4 V VCC = 5.5 V 0.4 - 1.6 0.4 1.6 0.35 1.6 V 74AHC_AHCT1G14 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 13 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 5 of 17 74AHC1G14; 74AHCT1G14 NXP Semiconductors Inverting Schmitt trigger 12. Dynamic characteristics Table 9. Dynamic characteristics GND = 0 V; tr = tf  3.0 ns. For waveform see Figure 5. For test circuit see Figure 6. Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max CL = 15 pF - 4.2 12.8 1.0 15.0 1.0 16.5 ns CL = 50 pF - 6.0 16.3 1.0 18.5 1.0 20.5 ns - 3.2 8.6 1.0 10.0 1.0 11.0 ns - 4.6 10.6 1.0 12.0 1.0 13.5 ns - 12 - - - - - pF - 4.1 7.0 1.0 8.0 1.0 9.0 ns - 5.9 8.5 1.0 10.0 1.0 11.0 ns - 13 - - - - - pF For type 74AHC1G14 tpd propagation delay [1] A to Y; VCC = 3.0 V to 3.6 V VCC = 4.5 V to 5.5 V [2] [3] CL = 15 pF CL = 50 pF CPD power dissipation capacitance per buffer; CL = 50 pF; f = 1 MHz; VI = GND to VCC [4] For type 74AHCT1G14 tpd propagation delay A to Y; VCC = 4.5 V to 5.5 V [1] [3] CL = 15 pF CL = 50 pF CPD power dissipation capacitance [4] per buffer; VI = GND to VCC [1] tpd is the same as tPLH and tPHL. [2] Typical values are measured at VCC = 3.3 V. [3] Typical values are measured at VCC = 5.0 V. [4] CPD is used to determine the dynamic power dissipation PD (W). PD = CPD  VCC2  fi + (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 74AHC_AHCT1G14 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 13 January 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 6 of 17 74AHC1G14; 74AHCT1G14 NXP Semiconductors Inverting Schmitt trigger 13. Waveforms 90 $LQSXW 9&& W3+/ W3/+ 9, 38/6( *(1(5$725 90