TPH3206PSB

TPH3206PSB 650V GaN FET in TO-220 (source tab) Description Features The TPH3206PSB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Package Package Configuration 3 lead TO-220 Source Part Number TPH3206PSB TPH3206PSB TO-220 (top view) S  JEDEC qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability  Very low QRR  Reduced crossover loss  RoHS compliant and Halogen-free packaging Benefits  Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost  Achieves increased efficiency in both hard- and softswitched circuits  Easy to drive with commonly-used gate drivers  GSD pin layout improves high speed design Applications     Datacom Broad industrial PV inverter Servo motor Key Specifications G S D VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mΩ) max* 180 QRR (nC) typ 52 QG (nC) typ 6.2 * Dynamic on-resistance; see Figures 19 and 20 Common Topology Power Recommendations Cascode Schematic Symbol November 22, 2017 tph3206p.2 Cascode Device Structure CCM bridgeless totem-pole* 1519W max Hard-switched inverter** 1717W max Conditions: FSW=45kHz; TJ=115°C; THEATSINK=90°C; insulator between device and heatsink (6 mil Sil-Pad® K-10); power de-rates at lower voltages with constant current * VIN=230VAC; VOUT=390VDC ** VIN=380VDC; VOUT=240VAC © 2017 Transphorm Inc. Subject to change without notice. 1 TPH3206PSB Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS V(TR)DSS VGSS PD ID IDM Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±18 Maximum power dissipation @TC=25°C 81 W Continuous drain current @TC=25°C b 16 A Continuous drain current @TC=100°C b 10 A Pulsed drain current (pulse width: 10µs) 60 A V (di/dt)RDMC Reverse diode di/dt, repetitive c 1200 A/µs (di/dt)RDMT Reverse diode di/dt, transient d 2400 A/µs Case -55 to +150 °C Junction -55 to +150 °C -55 to +150 °C 260 °C Typical Unit 1.55 °C/W 62 °C/W TC TJ TS TSOLD Operating temperature Storage temperature Soldering peak temperature e Notes: a. In off-state, spike duty cycle D