TPH3206LSB

TPH3206L Series Not recommended for new designs –see TP65H150LSG 650V GaN FET PQFN Series Description Features The TPH3206L Series 650V, 150mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing Product Series and Ordering Information Part Number* Package Package Configuration TPH3206LDGB** 8x8 PQFN Drain TPH3206LSB 8x8 PQFN Source TPH3206LSB 8x8 PQFN (bottom view) S D D S G Benefits  Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost  Achieves increased efficiency in both hard- and softswitched circuits  Easy to drive with commonly-used gate drivers Applications     * Add “-TR” suffix for tape and reel; see page 14 ** LDGB package offers larger gate pad TPH3206LDGB 8x8 PQFN (bottom view)  JEDEC qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability  Very low QRR  Reduced crossover loss  RoHS compliant and Halogen-free packaging G Datacom Broad industrial PV inverter Servo motor Key Specifications VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mΩ) max* 180 QRR (nC) typ 52 QG (nC) typ 6.2 * Dynamic on-resistance; see Figures 19 and 20 Cascode Schematic Symbol February 14, 2019 tph3206l.6 Cascode Device Structure © 2018 Transphorm Inc. Subject to change without notice. 1 TPH3206L Series Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS V(TR)DSS VGSS PD ID IDM Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±18 Maximum power dissipation @TC=25°C 81 W Continuous drain current @TC=25°C b 16 A Continuous drain current @TC=100°C b 10 A Pulsed drain current (pulse width: 10µs) 60 A V (di/dt)RDMC Reverse diode di/dt, repetitive c 1200 A/µs (di/dt)RDMT Reverse diode di/dt, transient d 2400 A/µs Case -55 to +150 °C Junction -55 to +150 °C -55 to +150 °C 260 °C Typical Unit 1.55 °C/W 45 °C/W TC TJ TS TSOLD Operating temperature Storage temperature Soldering peak temperature e Notes: a. In off-state, spike duty cycle D