PJM12P20DF

PJM12P20DF P-Channel Enhancement Mode Power MOSFET Features DFN2x2-6L 1.D ⚫ Low gate charge and RDS(ON) 2.D 3.G ⚫ VDS= -20V,ID= -12A RDS(on)< 22mΩ @VGS= -4.5V S D PIN1 6.D 5.D 4.S Marking Code: 12P20 Applications Schematic Diagram ⚫ Load switch 1、2、5、6.Drain ⚫ PWM application 3.Gate 4.Source Absolute Maximum Ratings Ratings at 25℃ Case temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous -ID 12 A Drain Current-Pulsed Note1 -IDM 48 A Maximum Power Dissipation PD 4.5 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJC 27.8 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Case Note2 www.pingjingsemi.com Revision：2.0 Aug-2021 1/5 PJM12P20DF P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 20 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 0.4 0.7 1 V Drain-Source On-Resistance Note3 RDS(on) VGS=-4.5V,ID=-10A -- 17 22 mΩ VGS=-2.5V,ID=-5A -- 22 30 mΩ VDS=-5V,ID=-6.7A -- 18 -- S -- 2000 -- pF -- 242 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 231 -- pF Turn-on Delay Time td(on) -- 10 -- nS Turn-on Rise Time tr VDS=-10V, ID=-12A -- 31 -- nS Turn-off Delay Time td(off) VGEN=-4.5V,RG=2.5Ω -- 28 -- nS VDS=-10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 8 -- nS Total Gate Charge Qg -- 15.3 -- nC Gate-Source Charge Qgs -- 2.2 -- nC Gate-Drain Charge Qgd -- 4.4 -- nC -- -- 1.2 V -- -- 12 A VDS=-10V,ID=-6A, VGS=-4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 -VSD Diode Forward Current Note2 -IS VGS=0V,IS=-12A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Aug-2021 2/5 PJM12P20DF P-Channel Enhancement Mode Power MOSFET -ID Drain Current (A) 50 4.5V RDS(on) On-Resistance(mΩ) Typical Characteristic Curves 3V 40 30 2V 2.5V 20 10 0 0 1.5V 1 2 3 4 5 27 24 VGS =-2.5V 20 16 12 VGS =-4.5V 8 4 0 0 2 4 40 25℃ 125℃ 20 10 0 0 0.5 1.0 1.5 Normalized On-Resistance -ID Drain Current (A) TA=-55℃ 30 2.0 12 2.0 1.5 1.0 0.5 -100 -50 0 50 100 150 200 TJ Junction Temperature(℃) 104 1.3 C Capacitance (pF) Normalized Breakdown Voltage(V) 10 2.5 -VGS Gate-Source Voltage (V) 1.2 1.1 1.0 0.9 0 -100 8 -ID Drain Current (A) -VDS Drain-Source Voltage (V) 50 6 -50 0 50 100 150 TJ Junction Temperature(℃) www.pingjingsemi.com Revision：2.0 Aug-2021 200 Ciss 103 Coss Crss 102 101 0 3 6 9 12 15 18 -VDS Drain-Source Voltage (V) 3/5 5 4 VDS =-6V ID=-8A 3 2 1 0 0 5 10 15 20 25 30 Qg Gate Charge (nC) www.pingjingsemi.com Revision：2.0 Aug-2021 35 -IS Reverse Drain Current (A) -VGS Gate-Source Voltage (V) PJM12P20DF P-Channel Enhancement Mode Power MOSFET 10 TJ=150℃ 0.1 0.0 TJ=-50℃ TJ=-25℃ 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD Source-Drain Voltage (V) 4/5 PJM12P20DF P-Channel Enhancement Mode Power MOSFET Package Outline DFN2x2-6L-0001 Dimensions in mm 2 ±0.05 0.65 BSC PIN 1 0.9 ±0.1 0.3 ±0.1 0.25 +- 00..015 0.75±0.1 0.25±0.05 2± 0 .05 1±0.1 PIN1 0.27±0.07 BOTTOM VIEW 0.20 +-00..0052 0.75± 0 .05 TOP VIEW 0.02 +0.03 SIDE VIEW Ordering Information Device Package Shipping PJM12P20DF DFN2x2-6L 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Aug-2021 5/5