PMEG4010EGW
40 V, 1 A low VF MEGA Schottky barrier rectifier
7 December 2016
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
Forward current: IF ≤ 1 A
Reverse voltage: VR ≤ 40 V
Low forward voltage typ. VF = 540 mV
Low reverse current typ. IR = 30 µA
Small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tsp ≤ 55 °C
-
-
1
A
VR
reverse voltage
Tj = 25 °C
-
-
40
V
VF
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
540
640
mV
IR
reverse current
VR = 40 V; pulsed; Tj = 25 °C
-
30
100
µA
[1]
Very short test pulse to prevent junction self-heating.
[1]
PMEG4010EGW
Nexperia
40 V, 1 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
[1]
Simplified outline
Graphic symbol
[1]
1
2
SOD123
1
2
sym001
The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
Type number
PMEG4010EGW
Package
Name
Description
Version
SOD123
Plastic surface-mounted package; 2 leads
SOD123
7. Marking
Table 4. Marking codes
Type number
Marking code
PMEG4010EGW
G5
PMEG4010EGW
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40 V, 1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
40
V
IF
forward current
Tsp ≤ 55 °C
-
1
A
-
1
A
δ = 0.5 ; f = 20 kHz; Tsp ≤ 130 °C; square
wave
-
1
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 60 °C; square
wave
[1]
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ ≤ 0.25
-
7
A
IFSM
non-repetitive peak
forward current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
9
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
400
mW
[1]
-
660
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Rth(j-a)
Rth(j-sp)
[1]
[2]
[3]
[4]
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1] [2]
-
-
310
K/W
[1] [3]
-
-
190
K/W
[4]
-
-
29
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
PMEG4010EGW
Product data sheet
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40 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-024913
103
Rth(j-a)
(K/W
102
duty cycle = 1
0.50
0.25
0.10
10
0.02
0.75
0.33
0.20
0.05
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-024914
103
Rth(j-a)
(K/W
102
duty cycle = 1
0.50
0.25
0.10
0.75
0.33
0.20
0.05
10
0
0.01
1
10-3
0.02
10-2
10-1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
10
102
tp (s)
2
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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40 V, 1 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
40
-
-
V
VF
forward voltage
IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
95
130
mV
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
155
210
mV
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
220
270
mV
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
295
350
mV
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
420
470
mV
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
540
640
mV
IR
reverse current
Cd
[1]
diode capacitance
VR = 10 V; pulsed; Tj = 25 °C
[1]
-
7
20
µA
VR = 40 V; pulsed; Tj = 25 °C
[1]
-
30
100
µA
-
43
50
pF
VR = 1 V; f = 1 MHz; Tj = 25 °C
Very short test pulse to prevent junction self-heating.
006aaa253
103
IF
(mA)
102
IR
(µA)
006aaa254
105
(1)
104
(2)
103
(1)
10
(2)
(3)
(4)
(3)
102
(5)
(4)
10
1
1
10- 1
10- 1
(5)
10- 2
10- 2
0
0.1
0.2
0.3
0.4
0.5
0.6
VF (V)
10- 3
Forward current as a function of forward
voltage; typical values
PMEG4010EGW
Product data sheet
10
20
30
VR (V)
40
pulsed condition
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
pulsed condition
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = -40 °C
Fig. 3.
0
Fig. 4.
Reverse current as a function of reverse
voltage; typical values
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40 V, 1 A low VF MEGA Schottky barrier rectifier
006aaa255
100
Cd
(pF)
80
60
40
20
0
0
10
20
30
VR (V)
40
f = 1 MHz; Tamb = 25 °C
Fig. 5.
Diode capacitance as a function of reverse voltage; typical values
11. Test information
P
tcy
duty cycle δ =
tp
tcy
tp
t
006aac658
Fig. 6.
Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS
defined as RMS current.
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PMEG4010EGW
Product data sheet
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40 V, 1 A low VF MEGA Schottky barrier rectifier
12. Package outline
3.75
3.45
2.80
2.55
1.3
1.0
1
2
1.7
1.5
Dimensions in mm
Fig. 7.
16-10-13
Package outline SOD123
13. Soldering
SOD123
4.58
3.27
3.1
2.1 1.62
1.12 1.22 1.42
0.81
0.91
0.81
2.36
0.91
4.18
1.11
occupied area
solder resist
Cu pad
solder paste
Dimensions in mm
Fig. 8.
1.11
16-05-10
16-08-31
sod123_fr
Reflow soldering footprint for SOD123
PMEG4010EGW
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40 V, 1 A low VF MEGA Schottky barrier rectifier
SOD123
7.5
2.65
2.5
2
4.5
3.5 2.55 2.4
1.2
occupied area
solder resist
solder land
glue dot
Dimensions in mm
Fig. 9.
0.33
1.2
16-09-02
16-09-06
sod123_fw
Wave soldering footprint for SOD123
PMEG4010EGW
Product data sheet
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40 V, 1 A low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG4010EGW v.1
20161207
Product data sheet
-
-
PMEG4010EGW
Product data sheet
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40 V, 1 A low VF MEGA Schottky barrier rectifier
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15. Legal information
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Data sheet status
Document
[1] [2]
status
Product
[3]
status
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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PMEG4010EGW
Product data sheet
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40 V, 1 A low VF MEGA Schottky barrier rectifier
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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40 V, 1 A low VF MEGA Schottky barrier rectifier
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 5
11. Test information......................................................... 6
12. Package outline.......................................................... 7
13. Soldering..................................................................... 7
14. Revision history..........................................................9
15. Legal information..................................................... 10
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Nexperia B.V. 2017. All rights reserved
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Date of release: 07 December 2016
PMEG4010EGW
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