X0405MF

X0405MF Series 4A SCRs Sensitive Gate SCRs ShenZhenHanKingyuan Electronic CO.,Ltd ShenZhenHanKingyuan Electronic CO.,Ltd 1 2 SCRs X0405MF Series Sensitive Gate SCR 3 01. 1 2 TO-202-3 3 TO-251 2 1 Sensitive Gate SCR 3 1 2 3 TO-252 TO-126 1 2 3 TO-220B Non-Insulated FEATURES IT(RMS):4A VGT: 0.8V VDRM VRRM:600V APPLICATIONS Washing machine,vacuums, massager,solid state relay，AC Motor speed regulation and so on. www.scr-ky.com PAGE.01/06 SCRs X0405MF Series Sensitive Gate SCR ShenZhenHanKingyuan Electronic CO.,Ltd Absolute Maximum Ratings 02. (Tj=25°C unless otherwise specifed) Symbol Parameter Conditions Ratings Unit VDRM VRRM Repetitive Peak Off-State Voltage X0405 600 V IT(RMS) R.M.S On-State Current 4 A IT(AV) average On-State Current 2.5 A ITSM Surge On-State Current F=50Hz,tp=10ms 30 A I²t I²t for fusing Tp=10ms 4.5 A²s IGM Peak Gate Current tp=20uS,Tj=110°C 1.2 A PG(AV) Average Gate Power Dissipation Tj=110°C 0.2 W PGM Peak Gate Power Dissipation tp=20uS,Tj=110°C 1 W Tj Operating Junction Temperature ～40~125 °C TSTG Storage Temperature ～40~150 °C Value Unit Tc=25°C ≤5 uA Tc=110°C ≤100 uA Tc=25°C ≤5 uA Tc=110°C ≤100 uA Electrical Characteristics (Tj=25°C unless otherwise specifed) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current VTM Forward "on" voltage IT=8A tp=380us ≤1.7 V VGD Gate nontrigger voltage VD=VDRM,Tj=110°C,RGK=1KΩ ,RL=3.3KΩ ≥0.2 V IL Latching current IG=1.2IGT ≤6 mA IH Holding current VD=12V ,IGT=0.1A ≤5 mA VGT Gate trigger voltage VD=12V ≤0.8 V IGT Gate trigger current VD=12V,IT=0.1A ≤120 uA dv/dt Critical-rate of rise of commutation voltage VD=2/3VDRM,Tj=110°C,RGK=1KΩ ≥10 V/us www.scr-ky.com Test Conditions PAGE.02/06 SCRs X0405MF Series Sensitive Gate SCR ShenZhenHanKingyuan Electronic CO.,Ltd FIG1 03. FIG2 RMS on-state current versus case temperature Maximum power dissipation versus RMS on-state current IT(RMS) (A) P(w) 6 6 α=180° 5 4 TO-251/ TO-252 4 TO-220B (Non-Ins) 3 TO-126 2 2 1 0 0 1 2 IT(RMS) (A) 3 4 Tc (℃) 0 5 0 25 FIG3 75 100 125 FIG4 On-state characteristics (maximum values) Surge peak on-state current versus number of cycles 50 50 ITM (A) ITSM (A) 40 tp=10ms One cycle 40 Tj=Tjmax 10 30 20 1 Tj=25℃ 10 Number of cycles 0 1 10 100 1000 0.1 0 FIG5 0.5 1.0 1.5 VTM (V) 2.0 2.5 3.0 3.5 4.0 FIG6 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp