M7GAT

M1GAT thru M7GAT SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIERS Forward Current-1.0A Reverse Voltage-50V to 1000V FEATURES   For surface mount applications  Glass passivated chip junction  Low profile package  ESD (HBM) ＞ 4KV  Lead free in comply with EU RoHS 2011/65/EU directives PINNING  PIN DESCRIPTION 1 Cathode 2 Anode 1 MECHANICAL DATA   Case: SMA molded plastic body  Terminals: Solderable per MIL-STD-750, Method 2026  Weight: Approximated 0.055 grams 2 Top View Marking Code: M1~M7 Simplified outline SMA and symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %. PARAMETER SYMBOL M1GAT M2GAT M3GAT M4GAT M5GAT M6GAT M7GAT UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 1.0 A Peak Forward Surge Current (Note1) IFSM 30 A Maximum Forward Voltage at 1.0 A VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage TA=25℃ IR 5 50 μA CJ 15 pF RθJA 75 ℃/W TJ,TSTG -55 to +150 ℃ TA=125℃ Typical Junction Capacitance (Note2) Typical Thermal Resistance (Note3) Operating and Storage Temperature Range Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method). 2. Measured at 1MHz and applied reverse voltage of 4 V D.C. 3. P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/4 Dated: 08/2017 Rev:2.0 M1GAT thru M7GAT RATINGS AND CHARACTERISTIC CURVES Fig.2 Typical Instaneous Reverse Characteristics Fig.1 Forward Current Derating Curve Instaneous Reverse Current (μA) Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 175 100 T J =150°C 10 T J =125°C T J =100°C 1.0 T J =75°C 0.1 T J =25°C 0.01 0 Junction Capacitance (pF) TJ = 2 5° C 00 =1 TJ =1 25 °C °C 0.5 TJ Instaneous Forward Current (A) 1.0 0.8 0.9 400 600 800 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 0.2 0.1 0.6 200 Instaneous Reverse Voltage (V) Case Temperature (°C) 100 T J =25°C 10 1 0.7 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surge Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surge Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/4 Dated: 08/2017 Rev:2.0 M1GAT thru M7GAT PACKAGE OUTLINE SMA g g A E D C a HE A D E HE C e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil a 0.3 12 ORDERING INFORMATION Device Package Shipping M1GAT thru M7GAT SMA 5,000/Tape & Reel (13 inches) AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/4 Dated: 08/2017 Rev:2.0 M1GAT thru M7GAT CONDITIONS OF SOLDERING AND STORAGE  RECOMMENDED CONDITIONS OF REFLOW SOLDERING Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters: Time length of peak temperature (longer) Time length of soldering (longer) Thickness of solder paste (thicker)     Marking Condition of hand soldering Type number Temperature: 370 OC Time: 3s max. Times: one time M1GAT M1 M2GAT M2 M3GAT M3 M4GAT M4 M5GAT M5 M6GAT M6 M7GAT M7     STORAGE CONDITIONS  Temperature Marking code 5 to 40 OC  Humidity 30 to 80% RH  Pad size Recommended period One yaer after manufacturing 2.4 (94) 1.8 (71) 1.8 (71) 1.8 (71)  MSL  mm Unit ： (mil) 1 Level AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/4 Dated: 08/2017 Rev:2.0