BAS70-04

BAS70/-04/-05/-06 SOT-23 Plastic-Encapsulate Diodes SWITCHING DIODE FEATURES Low turn-on voltage z Fast switching z Also available in lead free version z BAS70 Marking: 73 SOT-23 BAS70-04 Marking: 74 BAS70-05 Marking: 75 BAS70-06 Marking: 76 MAXIMUM RATINGS @Ta=25℃ Symbol Parameter Value Unit VR DC Voltage 70 V IF Forward Continuous Current 70 mA PD Power Dissipation 200 mW RθJA Thermal Resistance from Junction to Ambient 500 ℃/W TJ Junction Temperature 125 ℃ Tstg Storage Temperature ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol V(BR) Test conditions Min IR= 10µA Max Unit 70 V Reverse voltage leakag e current IR VR=50V 120 nA Forward voltage VF IF=1mA IF=15mA 410 1000 mV Diode cap acitance CD VR=0V f=1MHz 2 pF Reveres recovery time trr 5 ns http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 IF=IR=10mA,Irr=0.1xIR, RL=100Ω Page 1 Document ID Issued Date Revised Date Revision A S-222645 2008/02/10 2010/03/10 B Page. 2 BAS70/-04/-05/-06 SOT-23 Plastic-Encapsulate Diodes SWITCHING DIODE Forward Characteristics Characteristics o o REVERSE CURRENT IR =1 00 a T T= a 2 5 o C 1 0.1 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE VF 2 1 REVERSE VOLTAGE http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 15 VR 0 10 20 30 40 (mW) 250 PD 200 20 50 VR Page 2 70 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE (V) 60 (V) Power Derating Curve 300 3 10 o Ta=25 C REVERSE VOLTAGE f=1MHz 5 0.1 (V) Ta=25℃ 0 1 0.01 1.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 0.8 Capacitance Characteristics 4 0 Ta=100 C (uA) 10 IF FORWARD CURRENT Reverse 10 C (mA) 100 Ta 125 150 (℃) Document ID Issued Date Revised Date Revision A S-222645 2008/02/10 2010/03/10 B Page. 2