NSI1311-Q1SWVR

NSi1311-Q1 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.2 Product Overview VDD1 monitoring NSI1311-Q1 is a high-performance isolated amplifier with output separated from input based on the NOVOSENSE capacitive isolation technology. The device has a singleended input signal range from 0.1V to 2V. The high input impedance of NSI1311-Q1 makes it highly suitable for connection to high-voltage resistive dividers or other voltage signal sources with high output resistance. The device has a fixed gain of 1 and provides a differential analog output. The low offset and gain drift ensure the accuracy over the entire temperature range. The high common-mode transient immunity ensures that the device is able to provide accurate and reliable measurements even in the presence of high-power switching such as in motor control applications. The fail-safe function (missing VDD1 detection) simplifies system-level design and diagnostics.  Operation Temperature: -40℃~125℃  AEC-Q100 qualified for automotive applications  RoHS-Compliant Packages: Key Features SOP-8(300mil) Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011   CSA component notice 5A approval IEC60950-1 standard DIN VDE V 0884-11:2017-01 Applications  Bus voltage monitoring  AC motor controls  Power and solar inverters  Up to 5000Vrms Insulation voltage  Uninterruptible Power Suppliers  0.1~2V, High-Impedance Input Voltage Range  Automotive onboard chargers  Fixed Gain: 1  Low Offset Error and Drift: Device Information ±1.5mV (Max), -5~30μV/℃ (Max)  Low Gain Error and Drift: ±0.3% (Max), ±45ppm/℃ (Max)  Part Number NSI1311-Q1SWVR Package SOP8(300mil) Body Size 5.85mm × 7.50mm Functional Block Diagrams Low Nonlinearity and Drift: ±0.04% (Max), ±1ppm/℃ (Typ)  SNR: 82dB (Typ, BW=10kHz), 70dB (Typ, BW=100kHz)  Wide bandwidth: 400kHz (Typ)  High CMTI: 150kV/μs (Typ)  System-Level Diagnostic Feature: Figure 1. Block Diagram Copyright © 2020, NOVOSENSE Page 1 NSi1311 Datasheet (EN) 1.2 INDEX 1. PIN CONFIGURATION AND FUNCTIONS........................................................................................................................................ 3 2. ABSOLUTE MAXIMUM RATINGS................................................................................................................................................... 4 3. RECOMMENDED OPERATING CONDITIONS.................................................................................................................................. 4 4. THERMAL INFORMATION..............................................................................................................................................................4 5. SPECIFICATIONS.............................................................................................................................................................................4 5.1. 5.2. 5.3. ELECTRICAL CHARACTERISTICS................................................................................................................................................... 5 TYPICAL PERFORMANCE CHARACTERISTICS.................................................................................................................................. 6 PARAMETER MEASUREMENT INFORMATION................................................................................................................................ 8 6. HIGH VOLTAGE FEATURE DESCRIPTION.........................................................................................................................................8 6.1. 6.2. 6.3. INSULATION AND SAFETY RELATED SPECIFICATIONS....................................................................................................................... 8 DIN VDE V 0884-11 (VDE V 0884-11): 2017-01 INSULATION CHARACTERISTICS........................................................................8 REGULATORY INFORMATION....................................................................................................................................................10 7. FUNCTION DESCRIPTION.............................................................................................................................................................10 7.1. 7.2. 7.3. OVERVIEW...........................................................................................................................................................................10 ANALOG INPUT.................................................................................................................................................................... 11 ANALOG OUTPUT................................................................................................................................................................. 11 8. APPLICATION NOTE..................................................................................................................................................................... 12 8.1. 8.2. 8.3. TYPICAL APPLICATION CIRCUIT................................................................................................................................................ 12 SENSE RESISTOR SELECTION....................................................................................................................................................12 PCB LAYOUT........................................................................................................................................................................12 9. PACKAGE INFORMATION.............................................................................................................................................................13 10. ORDERING INFORMATION........................................................................................................................................................ 14 11. DOCUMENTATION SUPPORT.....................................................................................................................................................14 12. TAPE AND REEL INFORMATION.................................................................................................................................................15 13. REVISION HISTORY.................................................................................................................................................................... 16 Copyright © 2020, NOVOSENSE Page 2 NSi1311-Q1 Datasheet (EN) 1.2 1. Pin Configuration and Functions Figure 1.1 Package Table 1.1 Pin Configuration and Description NSi1311 PIN NO. SYMBOL FUNCTION 1 VDD1 Power supply for isolator side 1(3.0V to 5.5V) 2 VIN Analog input 3 SHTDN Shutdown input, active high, pulled up internally (typical resistor value: 100kΩ) 4 GND1 Ground 1, the ground reference for Isolator Side 1 5 GND2 Ground 2, the ground reference for Isolator Side 2 6 OUTN Negative output 7 OUTP Positive output 8 VDD2 Power supply for isolator side 2 (3.0V to 5.5V) Copyright © 2020, NOVOSENSE Page 3 NSi1311-Q1 Datasheet (EN) 1.2 2. Absolute Maximum Ratings Parameters Symbol Min VDD1, VDD2 -0.3 6.5 V VIN GND1-6 VDD1+0.5 V SHTDN GND1-0.5 VDD1+0.5 OUTP, OUTN GND2-0.5 VDD2+0.5 V Io -10 10 mA TOPR -40 125 ℃ Junction Temperature TJ -40 150 ℃ Storage Temperature TSTG -55 150 ℃ HBM (1) ±2000 V CDM (2) ±1000 V Power Supply Voltage Input Voltage Output Voltage Output current per Output Pin Operating Temperature Electrostatic discharge Typ Max Unit (1) Human body model (HBM), per AEC-Q100-002-RevD (2) Charged device model (CDM), per AEC-Q100-011-RevB 3. Recommended Operating Conditions Parameters Symbol Min Typ Max Side1 Power Supply VDD1 3.0 5.0 5.5 V Side2 Power Supply VDD2 3.0 3.3 5.5 V Differential input voltage before clipping output VClipping Linear differential input full scale voltage Digital input voltage Operating Ambient Temperature 2.56 Unit V VFSR 0.1 2 V SHTDN GND1 VDD1 TA -40 125 ℃ 4. Thermal Information Parameters Symbol SOP8(300mil) Unit Junction–to-ambient thermal resistance RθJA 86 ℃/W Junction-to-case (top) thermal resistance RθJC(top) 28 ℃/W Junction-to-board thermal resistance RθJB 42 ℃/W Junction–to-top characterization parameter ΨJT 4 ℃/W Junction-to-board characterization parameter ΨJB 42 ℃/W 5. Specifications Copyright © 2020, NOVOSENSE Page 4 NSi1311-Q1 Datasheet (EN) 1.2 5.1. Electrical Characteristics (VDD1 = 3.0V~5.5V, VDD2 = 3.0V~5.5V, VIN = 0.1V to 2V, and SHTDN = GND1 = 0V, TA = -40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 3.3V, TA = 25℃) Parameters Symbol Min Typ Max Unit Comments Side1 Supply Voltage VDD1 3.0 5.0 5.5 V Side2 Supply Voltage VDD2 3.0 3.3 5.5 V Side1 Supply Current IDD1 11.4 15.1 mA SHTDN = LOW μA SHTDN = HIGH Side2 Supply Current IDD2 Power Supply VDD1 undervoltage detection threshold voltage 1 6.3 8.4 mA VDD1UV 1.8 2.3 2.7 V VDD1 falling VOS -1.5 ±0.4 1.5 mV Input offset drift TCVOS -5 10 30 μV/℃ Input resistance RIN 1 GΩ Input capacitance CIN 7 pF fIN = 275kHz Input bias current IIB nA VIN = GND1 Analog Input Input offset voltage Input bias current drift -15 TCIIB 3.5 15 ±10 pA/℃ 1 V/V VIN = 1V Analog Output Nominal Gain Gain error Gain error thermal drift EG -0.3% ±0.05% 0.3% TCEG -45 ±5 45 -0.04% ±0.01% 0.04% Nonlinearity Nonlinearity drift Total harmonic distortion THD Output noise 78 Signal to noise ratio VCMout Failsafe differential output voltage Copyright © 2020, NOVOSENSE ±1 ppm/℃ -87 dB 210 µVRMS 82 dB VIN = 1.8V, fIN = 1kHz, BW = 10kHz 70 dB VIN = 1.8V, fIN = 10kHz, BW = 100kHz SNR Common-mode output voltage Output Bandwidth ppm/℃ 1.35 1.4 1.46 V VFAILSAFE -2.53 -2.44 V BW 400 VIN = 1.8V, fIN = 10kHz, BW = 100kHz VIN = 1V, BW = 100kHz SHTDN active, or VDD1 missing kHz Page 5 NSi1311-Q1 Parameters Datasheet (EN) 1.2 Symbol Min Typ Max Unit Comments PSRRdc -78 dB PSRR vs VDD1, at DC PSRRac -75 dB PSRR vs VDD1, 100mV and 10kHz ripple PSRRdc -82 dB PSRR vs VDD2, at DC PSRRac -74 dB PSRR vs VDD2, 100mV and 10kHz ripple Output resistance ROUT 600 V Material Group I Comments DIN EN 60112 (VDE 0303-11); IEC 60112 IEC 60664-1 6.2. Insulation Characteristics Description Test Condition Symbol Value Unit DIN VDE 0110 For Rated Mains Voltage ≤ 150Vrms For Rated Mains Voltage ≤ 300Vrms Copyright © 2020, NOVOSENSE I to IV I to IV Page 8 NSi1311-Q1 Description Datasheet (EN) 1.2 Test Condition Symbol For Rated Mains Voltage ≤ 400Vrms 40/125/21 Pollution Degree per DIN VDE 0110, 2 Table 1 Maximum repetitive isolation voltage Input to Output Test Voltage, Method B1 Unit I to IV Climatic Classification Maximum working isolation voltage Value VIORM AC Voltage DC Voltage VIORM × 1.875 = Vpd (m), 100% production test, 2121 VPEAK 1500 VRMS 2121 VDC V pd (m) 3977 VPEAK VIOWM tini = tm = 1 sec, partial discharge < 5 pC Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 VIORM × 1.6 = Vpd (m), tini = 60 sec, tm = 10 sec, partial discharge < 5 pC V pd (m) 3394 VPEAK After Input and /or Safety Test Subgroup 2 and Subgroup 3 VIORM × 1.2= Vpd (m), tini = 60 sec, tm = 10 sec, partial discharge < 5 pC V pd (m) 2545 VPEAK t = 60 sec VIOTM 8000 VPEAK Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM ×1.6 VIOSM 6250 VPEAK VIO =500V, Tamb=Ts RIO >109 Ω VIO =500V, 100℃ ≤ Tamb ≤ 125℃ RIO >1011 Ω f = 1MHz CIO 0.8 pF θJA = 86 ℃/W, VI = 5.5V, TJ = 150 ℃, TA = 25 ℃ Ps 1430 mW θJA = 86 ℃/W, VI = 5.5V, TJ = 150 ℃, TA = 25 ℃ Is 260 mA Ts 150 ℃ VISO 5000 VRMS Maximum transient isolation voltage Maximum Surge Isolation Voltage Isolation resistance Isolation capacitance Safety input, output, or total power Safety input, output, or supply current Maximum safety temperature UL1577 VTEST = VISO, t = 60 s (qualification), Insulation voltage per UL Copyright © 2020, NOVOSENSE VTEST = 1.2 × VISO, t = 1 s (100% production test) Page 9 NSi1311-Q1 Datasheet (EN) 1.2 Figure 6.1 NSi1311 Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 6.3. Regulatory Information The NSi1311 are approved or pending approval by the organizations listed in table. UL VDE CQC Certified by CQC11-4715432012 UL 1577 Component Recognition Program Approved under CSA Component Acceptance Notice 5A DIN VDE V 0884-11(VDE V 0884-11):2017-01 Single Protection, 5000Vrms Isolation voltage Single Protection, 5000Vrms Isolation voltage Reinforce Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation Certificate No.E500602 Certificate No.E500602 Certificate No.40052820 CQC20001264938 GB4943.1-2011 7. Function Description 7.1. Overview The NSI1311 is a high performance isolated amplifier with a high input impedance that accept wide range single-ended input. The singled-ended input is suited to bus voltage monitoring in high voltage applications where isolation is required. The analog input is continuously sampled by a second-order Σ-Δ modulator in the device. With the internal voltage reference and clock generator, the modulator convert the analog input signal to a digital bitstream. The output of the modulator is transferred by the drivers (called TX in the Functional Block Diagram) across the isolation barrier that separates the isolated side1 and side2 voltage. The received bitstream and clock are synchronized and processed, as shown in the Functional Block Diagram, by a fourth-order analog filter on the side2 and has a differential output. SHTDN pin is used to disable the conversion. Since SHTDN is an active high signal and is pulled up by a 100kΩ (typical) internally, it should be connected to GND1 or logic LOW in normal operation. Copyright © 2020, NOVOSENSE Page 10 NSi1311-Q1 Datasheet (EN) 1.2 Figure 7.1 Function Block Diagram 7.2. Analog Input There are two restrictions on the analog input signal (VIN).  If the input voltage exceeds the range GND1 – 6 V to VDD1 + 0.5 V, the input current must be limited to 10 mA because the device input electrostatic discharge (ESD) diodes turn on.  The linearity and noise performance of the device are ensured only when the analog input voltage remains within the specified linear full-scale range (FSR). 7.3. Analog Output For linear input range, NSI1311 provides an analog differential output which has a fixed gain of 1. If a full-scale input signal is applied to the NSI1311 (VIN ≥ VClipping), the analog output will be clipped. In addition, NSI1311 integrates some diagnostic measures and offers a fail-safe output to simplify system-level design. The fail-safe output is a negative differential output voltage that does not occur under normal device operation, and it will only be activated in following conditions:  When the undervoltage of VDD1 is detected (VDD1< VDD1UV).  When SHTDN signal is activated (pulled high). Figure 7.2 Typical Failsafe output and clipping output Copyright © 2020, NOVOSENSE Page 11 NSi1311-Q1 Datasheet (EN) 1.2 8. Application Note 8.1. Typical Application Circuit NSI1311 has an input impedance of up to 1GΩ, and has a wide input voltage range as well. These features make NSI1311 ideally suitable for isolated voltage sensing applications such as frequency inverters. The typical application circuit is shown in Figure 8.1. The bus voltage of the frequency inverter is divided by a resistance network, and the divided voltage is applied to the input of NSI1311 through a RC filter. The differential output of the isolated amplifier is converted to a single-ended analog output with an operational-amplifier-based circuit. An analog-to-digital converter usually receives the analog output and converts to digital signal for controller processing. Figure 8.1 Typical application circuit in voltage sensing 8.2. Sense Resistor Selection There are two other factors should be considered when selecting the sense resistor:  The voltage-drop on Rsense divided by nominal VBUS must not exceed the recommended linear input voltage range: VIN ≤ FSR.  The voltage-drop on Rsense divided by VBUS in maximum allowed overvoltage condition must not exceed the input voltage that causes a clipping output: VIN ≤ VClipping. 8.3. PCB Layout  NSI1311 requires a 0.1µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the VDD pin. If better filtering is required, an additional 1~10µF capacitor may be used. Copyright © 2020, NOVOSENSE Page 12 NSi1311-Q1 Datasheet (EN) 1.2 9. Package Information Figure 9.1 SOW8 Package Shape and Dimension in millimeters Copyright © 2020, NOVOSENSE Page 13 NSi1311-Q1 Datasheet (EN) 1.2 Figure 9.2 SOW8 Package Board Layout Example 10. Ordering Information Part No. NSI1311Q1SWVR Isolation Rating(kV) Linear Input Range(V) Moisture Sensitivity Level Temperature Automotive Package Type Package Drawing SPQ 5 0.1 ~ 2 Level-3 -40 to 125℃ YES SOP8 (300mil) SOW8 1000 11. Documentation Support Part Number Product Folder Datasheet Technical Documents Isolator selection guide NSi1311 Click here Click here Click here Click here Copyright © 2020, NOVOSENSE Page 14 NSi1311-Q1 Datasheet (EN) 1.2 12. Tape and Reel Information Figure 12.1 Tape and Reel Information of SOP8(300mil) Copyright © 2020, NOVOSENSE Page 15 NSi1311-Q1 Datasheet (EN) 1.2 13. Revision History Revision 1.0 1.1 1.2 Description Initial Release Add SOW8 board layout example and update insulation characteristics Add Tj in absolute maximum ratings Copyright © 2020, NOVOSENSE Date 2021/6/23 2021/7/17 2022/4/13 Page 16