PESD5V0S1BA

PESD5V0S1BA TVS Protection Diode FEATURES  Bi-directional ESD protection of one line  Low capacitance: 12pF(Typ.)  Low reverse stand−off voltage: 5.0V  Low reverse clamping voltage  Low leakage current  Fast response time  JESD22-A114-B ESD Rating of class 3B per human SOD-323 body model  Pin Configuration IEC 61000-4-2 Level 4 ESD protection APPLICATIONS  Computers and peripherals  PAD  Audio and video equipment  Cellular handsets and accessories  Subscriber identity module(SIM) card protection  Portable electronics  Other electronics equipments communication systems MAXIMUM RATINGS ( Ta =25℃ unless otherwise noted ) Parameter Symbol IEC 61000-4-2 ESD Voltage Air Model Per Human Body Model ESD Voltage VESD (1) Machine Model Peak Pulse Current ±25 ±16 kV ±0.4 PPP (2) Peak Pulse Power Unit ±25 Contact Model JESD22-A114-B ESD Voltage Limit IPP (2) 120 W 5 A Lead Solder Temperature − Maximum (10 Second Duration) TL 260 ℃ Junction Temperature Tj 150 ℃ T stg -55 ~ +150 ℃ Storage Temperature Range (1).Device stressed with ten non-repetitive ESD pulses. (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. 1/5 PESD5V0S1BA TVS Protection Diode ESD standards compliance IEC61000-4-2 Standard JESD22-A114-B Standard Contact Discharge Air Discharge ESD Class Human Body Discharge V Level Test Voltage kV Level Test Voltage kV 0 0～249 1 2 1 2 2 4 2 4 1A 1B 1C 250～499 500～999 1000～1999 3 6 3 8 4 8 4 15 2 3A 3B 2000～3999 4000～7999 8000～15999 ESD pulse waveform according to IEC61000-4-2 8/20 μs pulse waveform according to IEC 61000-4-5 2/5 PESD5V0S1BA TVS Protection Diode ELECTRICAL PARAMETER Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM Reverse Standoff Voltage V-I characteristics for a Bi-directional TVS ELECTRICAL CHARACTERISTICS(Ta =25℃ unless otherwise specified) Parameter Reverse stand off voltage Reverse leakage current Breakdown voltage Clamping voltage Junction capacitance Symbol Test conditions Min Typ （1） VRWM IR V(BR) （2） VC CJ VRWM=5V IT=1mA 5.8 IPP=5A VR=0V,f=1MHz 12 (1).Other voltages available upon request. (2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 3/5 Max Unit 5 V 0.1 μA 8.3 V 10 V 15 pF PESD5V0S1BA TVS Protection Diode TYPICAL CHARACTERISTICS Reverse 100 Capacitance Characteristics Characteristics 15 Pulsed Ta=25℃ 12 50 JUNCTION CAPACITANCE CJ (pF) (mA) REVERSE CURRENT IR f=1MHz Ta=100℃ 75 Ta=25℃ 25 0 -25 9 6 -50 3 -75 -100 -8 -6 -4 -2 0 2 REVERSE VOLTAGE VC —— VR 4 6 0 8 (V) IPP Ta=25℃ tp=8/20us CLAMPING VOLTAGE VC(V) 9 8 7 6 1 2 3 1 2 3 REVERSE VOLTAGE 10 5 0 4 5 REVERSE PEAK PULSE CURRENT IPP (A) 4/5 4 5 VR (V) 6 PESD5V0S1BA TVS Protection Diode PACKAGE OUTLINEAND PAD LAYOUT INFORMATION SOD-323 Package Outline Dimensions SOD-323 Suggested Pad Layout 5/5