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MBR20200DT

MBR20200DT

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    TO-252W

  • 描述:

    肖特基二极管 VRRM=200V IF=20A VF=0.92V IR=0.05mA TO-252W

  • 数据手册
  • 价格&库存
MBR20200DT 数据手册
山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T Schottky Barrier Rectifiers Reverse Voltage - 40 to 200 V Forward Current - 20 A TO-251W TO-252W PIN4 Features • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any PIN4 ✔ R o HS COMPLIANT PIN2 PIN1 Mechanical data • Case: TO-251W • Approx. Weight: 0.342g ( 0.012oz) • Case: TO-252W • Approx. Weight: 0.329g ( 0.011oz) • Lead free finish, RoHS compliant • Case Material: “Green” molding compound, UL flammability classification 94V-0,“Halogen-free”. PIN2 PIN1 PIN3 1 PIN3 1 2 4 2 4 3 3 Maximum Ratings And Electrical Characteristics Ratings At 25℃ Ambient Temperature Unless Otherwise Specified TO-251W MBR2040VT MBR2045VT MBR2060VT MBR20100VT MBR20150VT MBR20200VT Parameter Units TO-252W MBR2040DT MBR2045DT MBR2060DT MBR20100DT MBR20150DT MBR20200DT Maximum Recurrent Peak Reverse Voltage V RRM 40 45 60 100 150 200 V Maximum RMS voltage V RMS 28 32 42 70 105 140 V Maximum DC Blocking Voltage V DC 40 45 60 100 150 200 V Per leg Per device Maximum Average Forward Rectified Current Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)(Per leg) Max Instantaneous Forward Voltage at 10 A DC per leg Maximum DC Reverse Current T J = 25°C at Rated DC Reverse Voltage T J =125°C Typical Junction Capacitance (1) Typical Thermal Resistance (2) Operating Junction Temperature Range Storage Temperature Range I F(AV) 10 20 A I FSM 130 A VF 0.70 0.85 0.90 0.1 20 IR Cj 0.75 0.92 0.05 20 600 mA pF 400 °C/W 35 RθJA V Tj -55 ~ +150 -55 ~ +175 °C T stg -55 ~ +150 -55 ~ +175 °C (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)P.C.B. mounted with 10cmX10cmX1mm copper pad areas. Rev 1.1 23-Jan.-22 TO-251W TO-252W-S-MBR2040XT~MBR20200XT-20A200V Page 1 of 5 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T Fig.2 Typical Reverse Characteristics 20 15 15 0~ V 0V 00 20 ~1 10 5 0 20 40 60 80 100 120 140 160 180 Instaneous Reverse Current ( mA) 25 40 Average Forward Current (A) Fig.1 Typical Forward Current Derating Curve 100 40~100V 150~200V 10 1.0 0.1 T J =25°C 0.01 0.001 0 Case Temperature (°C) 60 80 100 Fig.4 Typical Junction Capacitance 10000 100 10 1 40~45V 60V 100V 150V 200V 0.1 0 0.2 0.4 0.6 0.8 1.0 Junction Capacitance ( pF) T J =25°C 1000 100 10 40~45V 60~200V 1 1.2 0.1 Instaneous Forward Voltage (V) 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 0 1 10 100 Transient Thermal Impedance( °C /W) 140 20 10 100 Fig.6- Typical Transient Thermal Impedance 100 10 Number of Cycles at 60Hz Rev 1.1 23-Jan.-22 1 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 40 20 Percent of Rated Peak Reverse Voltage(%) Fig.3 Typical Forward Characteristics Instaneous Forward Current (A) T J =125°C 1 0.01 0.1 1 10 100 t, Pulse Duration(sec) www.sdjingdao.com Page 2 of 5 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T TO-251W(I-PAK) Package Outline Dimensions A B C E L1 + D M NN J K T b1 L b G H F G TO-251W(I-PAK) mechanical data UNIT max mm mil A B b b1 C D E F 6.7 5.53 0.86 1.11 2.5 6.3 0.61 1.72 G 2.3 typ. H L L1 0.56 4.3 1.2 0.51 4.1 1.0 typ 6.6 5.33 0.76 0.91 2.3 6.1 0.51 1.52 min 6.3 5.13 0.66 0.71 2.1 5.9 0.41 1.32 0.46 3.9 0.8 max 264 218 34 44 98 248 24 68 22 169 47 typ 260 210 30 36 91 240 20 60 20 161 39 min 248 202 26 28 83 232 16 52 18 154 31 91 typ. M N J T K 1.8 typ. 1.3 typ. 3.2 ref. 4.83 ref. 1.8 ref. 71 typ. 51 typ. 126 ref. 190 ref. 71 ref. Marking Diagram YWW MBR2040VT Rev 1.1 23-Jan.-22 YWW: Date Code Y:Years(0~9) WW:Week MBR2040VT: Product name ( NOTE: The weekly code is based on the actual number of weeks in the calendar year.) 8B6 Page 3 of 5 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T Marking Diagram YWW MBR2040DT Rev 1.1 23-Jan.-22 YWW: Date Code Y:Years(0~9) WW:Week MBR2040DT: Product name ( NOTE: The weekly code is based on the actual number of weeks in the calendar year.) Page 4 of 5 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T Important Notice and Disclaimer Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics. Rev 1.1 23-Jan.-22 Page 5 of 5
MBR20200DT 价格&库存

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MBR20200DT
  •  国内价格
  • 5+0.90000
  • 50+0.84000
  • 200+0.78000
  • 1000+0.72000
  • 2500+0.69000
  • 5000+0.66000

库存:2500

MBR20200DT
  •  国内价格
  • 5+1.18569
  • 50+0.93024
  • 500+0.68429
  • 1000+0.67403
  • 2500+0.57370

库存:1408