山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T
Schottky Barrier Rectifiers
Reverse Voltage - 40 to 200 V
Forward Current - 20 A
TO-251W
TO-252W
PIN4
Features
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed
• Mounting position: any
PIN4
✔
R o HS
COMPLIANT
PIN2
PIN1
Mechanical data
• Case: TO-251W
• Approx. Weight: 0.342g ( 0.012oz)
• Case: TO-252W
• Approx. Weight: 0.329g ( 0.011oz)
• Lead free finish, RoHS compliant
• Case Material: “Green” molding compound, UL
flammability classification 94V-0,“Halogen-free”.
PIN2
PIN1
PIN3
1
PIN3
1
2
4
2
4
3
3
Maximum Ratings And Electrical Characteristics
Ratings At 25℃ Ambient Temperature Unless Otherwise Specified
TO-251W MBR2040VT MBR2045VT MBR2060VT MBR20100VT MBR20150VT MBR20200VT
Parameter
Units
TO-252W MBR2040DT MBR2045DT MBR2060DT MBR20100DT MBR20150DT MBR20200DT
Maximum Recurrent Peak Reverse Voltage
V RRM
40
45
60
100
150
200
V
Maximum RMS voltage
V RMS
28
32
42
70
105
140
V
Maximum DC Blocking Voltage
V DC
40
45
60
100
150
200
V
Per leg
Per device
Maximum Average Forward
Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)(Per leg)
Max Instantaneous
Forward Voltage at 10 A DC per leg
Maximum DC Reverse Current T J = 25°C
at Rated DC Reverse Voltage
T J =125°C
Typical Junction Capacitance (1)
Typical Thermal Resistance
(2)
Operating Junction Temperature Range
Storage Temperature Range
I F(AV)
10
20
A
I FSM
130
A
VF
0.70
0.85
0.90
0.1
20
IR
Cj
0.75
0.92
0.05
20
600
mA
pF
400
°C/W
35
RθJA
V
Tj
-55 ~ +150
-55 ~ +175
°C
T stg
-55 ~ +150
-55 ~ +175
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 10cmX10cmX1mm copper pad areas.
Rev 1.1
23-Jan.-22
TO-251W TO-252W-S-MBR2040XT~MBR20200XT-20A200V
Page 1 of 5
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T
Fig.2 Typical Reverse Characteristics
20
15
15
0~
V
0V
00
20
~1
10
5
0
20
40
60
80
100 120 140 160 180
Instaneous Reverse Current ( mA)
25
40
Average Forward Current (A)
Fig.1 Typical Forward Current Derating Curve
100
40~100V
150~200V
10
1.0
0.1
T J =25°C
0.01
0.001
0
Case Temperature (°C)
60
80
100
Fig.4 Typical Junction Capacitance
10000
100
10
1
40~45V
60V
100V
150V
200V
0.1
0
0.2
0.4
0.6
0.8
1.0
Junction Capacitance ( pF)
T J =25°C
1000
100
10
40~45V
60~200V
1
1.2
0.1
Instaneous Forward Voltage (V)
120
100
80
60
40
8.3 ms Single Half Sine Wave
(JEDEC Method)
0
1
10
100
Transient Thermal Impedance( °C /W)
140
20
10
100
Fig.6- Typical Transient Thermal Impedance
100
10
Number of Cycles at 60Hz
Rev 1.1
23-Jan.-22
1
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
40
20
Percent of Rated Peak Reverse Voltage(%)
Fig.3 Typical Forward Characteristics
Instaneous Forward Current (A)
T J =125°C
1
0.01
0.1
1
10
100
t, Pulse Duration(sec)
www.sdjingdao.com
Page 2 of 5
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T
TO-251W(I-PAK) Package Outline Dimensions
A
B
C
E
L1
+
D
M
NN
J
K
T
b1
L
b
G
H
F
G
TO-251W(I-PAK) mechanical data
UNIT
max
mm
mil
A
B
b
b1
C
D
E
F
6.7
5.53
0.86
1.11
2.5
6.3
0.61
1.72
G
2.3
typ.
H
L
L1
0.56
4.3
1.2
0.51
4.1
1.0
typ
6.6
5.33
0.76
0.91
2.3
6.1
0.51
1.52
min
6.3
5.13
0.66
0.71
2.1
5.9
0.41
1.32
0.46
3.9
0.8
max
264
218
34
44
98
248
24
68
22
169
47
typ
260
210
30
36
91
240
20
60
20
161
39
min
248
202
26
28
83
232
16
52
18
154
31
91
typ.
M
N
J
T
K
1.8
typ.
1.3
typ.
3.2
ref.
4.83
ref.
1.8
ref.
71
typ.
51
typ.
126
ref.
190
ref.
71
ref.
Marking Diagram
YWW
MBR2040VT
Rev 1.1
23-Jan.-22
YWW: Date Code
Y:Years(0~9)
WW:Week
MBR2040VT: Product name
( NOTE: The weekly code is based on the actual
number of weeks in the calendar year.)
8B6
Page 3 of 5
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T
Marking Diagram
YWW
MBR2040DT
Rev 1.1
23-Jan.-22
YWW: Date Code
Y:Years(0~9)
WW:Week
MBR2040DT: Product name
( NOTE: The weekly code is based on the actual
number of weeks in the calendar year.)
Page 4 of 5
山东晶导微电子股份有限公司
Jingdao Microelectronics co.LTD MBR2040 x T THRU MBR20200 x T
Important Notice and Disclaimer
Jingdao Microelectronics reserves the right to make changes to this document and
its products and specifications at any time without notice.
Customers should obtain and confirm the latest product information and specifications
before final design, purchase or use.
Jingdao Microelectronics makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, not does Jingdao Microelectronics
assume any liability for application assistance or customer product design.
Jingdao Microelectronics does not warrant or accept any liability with products which
are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual
property rights of Jingdao Microelectronics.
Jingdao Microelectronics products are not authorized for use as critical components
in life support devices or systems without express written approval of Jingdao Microelectronics.
Rev 1.1
23-Jan.-22
Page 5 of 5
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