0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SDEM20161T-8R2MS

SDEM20161T-8R2MS

  • 厂商:

    CYNTEC(乾坤)

  • 封装:

    2016

  • 描述:

    功率电感 8.2µH ±20% 2016 1.00mm 2.00 x 1.60mm 670mΩ 0.76A

  • 数据手册
  • 价格&库存
SDEM20161T-8R2MS 数据手册
CYNTEC CO., LTD. 乾坤科技股份有限公司 DOCUMENT : SDEM20161T-000 REVISION : A4 PAGE : 1 OF 4 Sealed Choke Coil SDEM20161T type  Features Low profile:2.0mm x 1.6mm x 1.0mm High performance (Isat) realized by metal dust core. Low loss realized with low DCR High magnetic shield construction should actualize high resolution for EMC. 100% lead (Pb) free meet RoHS standard  Application DC/DC converter for CPU in Notebook PC Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc.. VRM for server  Outline Dimensions W Code L Dimensions (mm) L 1.6  0.1 W 2.0  0.1 T 1.0 Max. T Note :This graph is in regard to outline dimensions spec. For outer appearance, please refer to actual product.  Recommend Land Pattern Dimensions The customer shall determine the land dimensions shown below after confirming and safety. B A C A 1.6 B 0.7 C 2.0 Unit : mm Jan., 2018 CYNTEC CO., LTD. 乾坤科技股份有限公司  DOCUMENT : SDEM20161T-000 REVISION : A4 PAGE : 2 OF 4 Specifications L0 Inductance ( H ) @ (0A) Typical Maximum SDEM20161T-R24MS 0.24 20 24 5.0 4.50 6.1 5.50 SDEM20161T-R33MS 0.33 27 32 4.0 3.60 4.6 4.10 SDEM20161T-R47MS 0.47 34 41 3.5 3.00 4.4 3.90 SDEM20161T-R68MS 0.68 46 55 3.2 2.80 3.7 3.30 SDEM20161T-1R0MS 1.0 60 72 2.7 2.40 3.15 2.70 SDEM20161T-1R5MS 1.5 100 120 2.4 2.16 2.7 2.43 SDEM20161T-2R2MS 2.2 134 159 1.8 1.60 1.9 1.70 SDEM20161T-3R3MS 3.3 255 306 1.2 1.08 1.5 1.35 SDEM20161T-4R7MS 4.7 355 426 1.1 1.00 1.4 1.26 SDEM20161T-6R8MS 6.8 532 639 0.8 0.72 1.15 1.05 SDEM20161T-100MS 10.0 840 1010 0.7 0.63 0.8 0.72 Part Number Rdc ( m ) Heat Rating Current DC Amps. Idc ( A ) Saturation Current DC Amps. Isat ( A ) Typical Typical Maximum Maximum *:If you require another part number please contact with us. **:Inductance Tolerance  20% Note 1.: All test data is referenced to 25℃ ambient. Note 2.: Test Condition:1MHz, 1.0Vrms Note 3.: Idc : DC current (A) that will cause an approximate △ T of 40℃ Note 4.: Isat : DC current (A) that will cause L0 to drop approximately 30% Note 5.: Operating Temperature Range -55℃ to +125℃ Note 6.: The part temperature (ambient + temp rise) should not exceed 125℃ under the worst case operating conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling provision all affect the part temperature. Part temperature should be verified in the end application. Note 7.: The rated current as listed is either the saturation current or the heating current depending on which value is lower. Jan., 2018 CYNTEC CO., LTD. 乾坤科技股份有限公司 INDUCTANCE(μH) 40 TEMP. RISE(℃) 0.10 20 0.05 3 4 5 DC BIAS(Amps) 6 7 0.50 0.40 INDUCTANCE(μH) 0.20 TEMP. RISE(℃) 3 4 DC BIAS(Amps) 5 0.80 TEMP. RISE(℃) 0.00 1.2 1.6 2.0 2.4 2.8 3.2 3.6 TEMP.RISE(℃) 0 0.4 0.8 0.00 1.2 1.6 2.0 DC BIAS(Amps) 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 100 SDEM20161T-1R5MS 80 60 40 0.60 INDUCTANCE(μH) 0.30 20 TEMP. RISE(℃) 0.00 3.50 2.4 2.8 3.2 INDUCTANCE(μH) 80 0 0.8 1.2 0.90 4.20 20 0.4 40 1.20 100 40 0.45 0.0 100 20 0 0.0 60 TEMP. RISE(℃) 8.0 0.14 1.50 TEMP. RISE(℃) INDUCTANCE(μH) 1.80 0.90 7.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 DC BIAS(Amps) 2.25 INDUCTANCE(μH) 6.0 60 0.28 80 4.0 SDEM20161T-2R2MS 1.35 5.0 80 DC BIAS(Amps) 2.70 4.0 INDUCTANCE(μH) 1.80 0 0.8 3.0 0.42 100 20 0.4 2.0 SDEM20161T-R68MS 0.0 40 0.20 0.0 1.0 0.00 60 0.40 10 DC BIAS(Amps) 1.00 INDUCTANCE(μH) 20 TEMP. RISE(℃) 0.56 6 SDEM20161T-1R0MS 0.60 INDUCTANCE(μH) 0 0.70 INDUCTANCE(μH) 1.20 0.07 80 0 0.00 2 30 0.14 0.84 20 1 40 100 40 0.10 0 50 0.21 0.0 60 0.30 60 DC BIAS(Amps) SDEM20161T-R47MS 0.60 70 0.28 8 INDUCTANCE(μH) 2 TEMP. RISE(℃) 1 80 SDEM20161T-R33MS 0.00 0 0 : 3 OF 4 TEMP. RISE(℃) 60 0.15 0.00 INDUCTANCE(μH) TEMP. RISE(℃) 0.20 PAGE 0.35 80 TEMP. RISE(℃) INDUCTANCE(μH) 0.25 INDUCTANCE(μH) 0.42 100 : A4 TEMP. RISE(℃) SDEM20161T-R24MS REVISION TEMP. RISE(℃) 0.30 : SDEM20161T-000 SDEM20161T-3R3MS 100 80 2.80 60 2.10 40 1.40 INDUCTANCE(μH) 0.70 20 TEMP. RISE(℃) 0.00 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 DC BIAS(Amps) 2.0 2.2 2.4 Jan., 2018 TEMP. RISE(℃) Current Characteristic INDUCTANCE(μH)  DOCUMENT CYNTEC CO., LTD. 乾坤科技股份有限公司 60 3.0 40 2.0 INDUCTANCE(μH) 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 DC BIAS(Amps) 1.6 1.8 2.0 100 7.00 80 5.60 60 4.20 40 20 1.40 TEMP. RISE(℃) 0 0.00 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 DC BIAS(Amps) 1.4 1.6 1.8 100 10.0 INDUCTANCE(μH) : 4 OF 4 INDUCTANCE(μH) 2.2 SDEM20161T-100MS 12.0 PAGE 2.80 TEMP. RISE(℃) 0.0 INDUCTANCE(μH) 4.0 TEMP. RISE(℃) 80 : A4 80 8.0 60 6.0 40 4.0 INDUCTANCE(μH) 2.0 TEMP. RISE(℃) INDUCTANCE(μH) 5.0 REVISION SDEM20161T-6R8MS 8.40 100 : SDEM20161T-000 20 TEMP. RISE(℃) 0.0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 DC BIAS(Amps) Jan., 2018 TEMP..RISE(℃) SDEM20161T-4R7MS 6.0 DOCUMENT
SDEM20161T-8R2MS 价格&库存

很抱歉,暂时无法提供与“SDEM20161T-8R2MS”相匹配的价格&库存,您可以联系我们找货

免费人工找货