瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
●
低浪涌电阻
●
优异的箝位性能
●
小型化紧凑封装，内部结构去应力设计
●
12 V以上电压规格对应漏电典型值低于2.0 μA
●
重复率0.01% 的10/1000 μS 波形对应峰值脉冲功率3000 W
●
表贴应用，节约空间
●
典型的故障模式为电压或电流超过额定而导致的短路
●
IEC 61000-4-2 ESD 30 kV(空气)，30 kV(接触)
●
数据线EFT保护符合IEC 61000-4-4
●
快速响应时间
瞬态抑制二极管 (TVS) 是一种电路保护元件，它可以削
●
玻璃钝化保护
弱或过滤突增瞬态电压(过压)，在浪涌到来瞬间几纳秒
●
回流焊高温保证:260 °C/30 s
时间内发生雪崩击穿，将浪涌电流引至接地端，并将电
●
温度系数典型值0.1%
压箝位在安全范围内，从而实现了高效能的电压保护。
●
密封材料阻燃等级V-0
●
湿度敏感等级符合MSL 等级1
Transient Voltage Suppressor (TVS) is a circuit
●
引脚镀锡
protection component that either attenuates (reduces)
●
无卤素，符合RoHS要求
or filters a transient voltage spike (overvoltage), TVS
●
TVS
概述 Description
diodes provide critical protection by going into
无铅E3：二级互连引线无铅，端子镀锡(Sn) (IPC/JEDEC J-STD609A.01)
avalanche breakdown within no more than a few
●
Low incremental surge resistance
nanoseconds after a strike, clamping the transient
●
Excellent clamping capability
voltage, and routing its current to the ground.
●
Low profile package with built-in strain relief
●
Typical IR less than 2.0 μA above 12 V
●
3000 W peak pulse power capability with a 10/1000 μS Waveform,
repetition rate (duty cycle): 0.01%
应用 Applications
●
For surface mounted applications to optimize board space
Typical failure mode is short from over-specified voltage or current
●
通信设备
Communication Equipment
●
●
安防
Security & Protection
●
IEC 61000-4-2 ESD 30 kV (Air), 30 kV (Contact)
●
工控设备
Industrial Control Equipment
●
EFT protection of data lines in accordance with IEC
●
电源
Power Supply
●
汽车电子
Automotive Electronics
●
Very fast response time
●
新能源设备
New Energy
●
Glass passivated chip junction
●
防雷保护
Lightning Protection
●
High temperature to reflow soldering guaranteed:
61000-4-4
260 °C/30 sec
●
功能图 Functional Diagram
(αT:Temperature Coefficient, typical value is 0.1%)
●
负极
Cathode
正极
Anode
单向 Uni-Directional
VBR @ TJ= VBR@25 °C x (1+αT x (TJ - 25))
Plastic package is flammability rated V-0 per Underwriters Laboratories
●
Meet MSL level1, per J-STD-020,
●
Matte tin lead–free plated
●
Halogen free and RoHS compliant
●
Pb-free E3 means 2nd level interconnect is Pb-free and the terminal
finish material is tin(Sn) (IPC/JEDEC J-STD-609A.01)
双向 Bi-Directional
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1
TVS
特性 Features
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
封装尺寸 Package Outline Dimensions (DO-214AB)
W1 W
Symbol
Max.
Min.
Max.
L
6.600
7.110
0.260
0.280
W
5.590
6.220
0.220
0.245
W1
2.900
3.200
0.114
0.126
H
2.060
2.620
0.079
0.103
T
0.1520
0.305
0.006
0.012
L1
7.750
8.130
0.305
0.320
L2
0.760
1.520
0.030
0.060
D
-
0.203
-
0.008
A
-
4.200
-
0.165
B
2.400
-
0.094
-
C
2.400
-
0.094
-
E
3.300
-
0.129
-
H
L2
T
TVS
L1
A
E
B
安装布局
Mounting Pad Layout
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C
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英制(英寸)
Inches
Min.
L
D
公制(毫米)
Millimeters
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TVS
符号
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
额定参数与特性 Maximum Ratings and Characteristics
参数
Parameter
符号
Symbol
值
Value
单位
Unit
PPPM
3000
W
10/1000 μS 测试波形1)(2)(图4)的峰值脉冲功耗(图2)-双芯片器件（5）
Peak Pulse Power Dissipation(Fig.2) by 10/1000 μS Test Waveform(1)(2)(Fig.4)
-Stacked Die Parts（5）
PPPM
4000
W
峰值功耗 ,无限散热，TL=50 °C
Peak Power Dissipation on Infinite Heat Sink at TL=50 °C
PD
6.5
W
IFSM
300
A
正向瞬态峰值电压 @ IF=100 A ，仅适用于单向产品(4)
Maximum Instantaneous Forward Voltage at 100 A for Unidirectional Only (4)
VF
3.5/5.0
V
工作温度范围
Operating Temperature Range
TJ
-65 to 150
°C
存储温度范围
Storage Temperature Range
TSTG
-65 to 175
°C
热阻(结至引线)
Typical Thermal Resistance Junction to Lead
RθJL
15
°C/W
热阻(结至环境)
Typical Thermal Resistance Junction to Ambient
RθJA
75
°C/W
10/1000 μS 脉冲波形(1)(2)((图4)下，峰值脉冲功耗 (图2)-单芯片器件
Peak Power Dissipation（Fig.2)- with a 10/1000 μS waveform(1)(2)(Fig.4)-Single Die Parts
TVS
正向脉冲电流峰值(3),额定负载叠加8.3 ms 单半正弦波测得(JEDEC方法)
Peak Forward Surge Current,8.3ms single half sinewave superimposed on rated load
(JEDEC Method)(3)
注释 Notes
1.
2.
3.
4.
5.
参照图4非重复性脉冲电流波形，初始结温25 °C 以图3所示曲线降额（环境温度TA=25 ℃ ）。
Non-repetitive current pulse, per Fig. 4 and derated above TJ (initial)=25 °C per Fig.
测试安装于8.0 mm 2 焊盘 。
Mounted on 8.0 mm 2 land areas.
叠加波形为8.3 ms 单个半周期正弦波或等幅方波 , 最长周期4次/min。
Measured of 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute
单芯片VF< 3.5 V，叠层芯片VF< 5.0 V。
VF < 3.5 V for single die parts and VF< 5.0 V for stacked-die parts.
双芯片产品的详细信息，请参阅电气特性中以*标示的部件编号。
For stacked die component details, please refer to models marked with * in electrical characteristics table.
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3
TVS
(除另有注释，默认TA=25 ℃ Ratings at 25 °C ambient temperature unless otherwise specified.)
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
型号规则 Part Numbering System
SMDJ
XX
C
A
产品系列 Product Series
反向关断电压
Reverse Stand-off Voltage
C: 双向 Bi-directional
None: 单向 uni-direction
标记 Marking
TVS
TVS
5% VBR 电压容差
5% VBR Voltage tolerance
阴极线
Cathode Band
SET
SET
XXX
YMXXX
YMXXX
商标
Trademark
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XXX
日期代码 Data Code
标记代码
Marking Code
商标
Trademark
日期代码 Data Code
Y-年 Year
Y-年 Year
M-月 Month
M-月 Month
XXX-批次号 Lot code
XXX-批次号 Lot code
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标记代码
Marking Code
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瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
术语 Glossary
项目
Item
描述
Description
箝位电压 Clamping Voltage
VC
TVS在低差阻区域内的电压，用于限制设备两端的电压。
Voltage across TVS in a region of low differential resistance that serves to limit the voltage across the device
terminals.
反向关断电压 Reverse Stand-off Voltage
TVS
TVS
VR
TVS 在没有导通状态下最高电压。
Maximum voltage that can be applied to the TVS without operation.
注：也用VWM（最高直流工作电压）表示，也称为截止电压(Vso)。
NOTE : It is also shown as VWM (maximum working voltage (maximum d.c. voltage)) and known as rated standoff voltage (Vso).
反向漏电流 Reverse Leakage Current
IR
量测VR的电流。
Current measured at VR.
注：也用ID 待机电流表示。
NOTE : Also shown as ID for stand-by current.
击穿电压 Breakdown Voltage
VBR
在击穿区以指定电流IT (测试电流)通过TVS的电压。
Voltage across TVS at a specified current IT (test current) in the breakdown region.
额定随机重复峰值脉冲电流 Rated Random Recurring Peak Impulse Current
IPPM
施加在设备上的随机重复峰值脉冲电流的最大额定值。
Maximum-rated value of random recurring peak impulse current that may be applied to a device.
额定平均功率 Rated Average Power Dissipation
PM(AV)
所有电源(包括瞬态电流和待机电流)在短时间内平均产生的最大额定功耗。
Maximum-rated value of power dissipation resulting from all sources, including transients and standby current,
averaged over a short period of time.
额定随机重复峰值脉冲功率 Rated Random Recurring Peak Impulse Power Dissipation
PPPM
额定随机重复峰值脉冲电流(IPPM) 和规定的最大箝位电压(VC)乘积的最大额定值。
Maximum-rated value of the product of rated random recurring peak impulse current (IPPM) multiplies by specified
maximum clamping voltage (VC).
电容 Capacitance
CJ
在规定的频率和电压下所测量的TVS电容。
Capacitance across the TVS measured at a specified frequencyx and voltage.
—(GB-T 18802.321 / IEC 61643-321 / JESD210A)
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瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
项目
Item
描述
Description
正向浪涌峰值电压 Peak Forward Surge Voltage
VFS
在指定的正向浪涌电流(IFS)和持续时间下，通过TVS的峰值电压。
Peak voltage across TVS for a specified forward surge current (IFS) and time duration.
注：也用VF 表示。
NOTE : Also shown as VF.
正向浪涌电流 Forward Surge Current
IFS
在正向导通区域通过TVS的脉冲电流。
Pulsed current through TVS in the forward conducting region.
注：也用IF表示。
NOTE : Also shown as IF.
击穿电压的变化与温度变化的比值。
The change of breakdown voltage divided by the change of temperature.
峰值脉冲电流 Peak pulse Current
IPP
施加在TVS上的峰值脉冲电流，以确定箝位电压VC 的特定波形。
Peak pulse current value applied across the TVS to determine the clamping voltage VC for a specified wave shape.
脉冲直流测试电流 Pulsed D.C. Test Current
IT
测量击穿电压VBR的试测试电流。该电流值由制造商确定，通常以脉冲持续时间小于40 ms的毫安级电流给出。
Test current for measurement of the breakdown voltage VBR. This is defined by the manufacturer and usually
given in milliamperes with a pulse duration of less than 40 ms.
注：也用IBR表示。
NOTE : Also shown as IBR .
—(GB-T 18802.321 / IEC 61643-321 / JESD210A)
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6
TVS
TVS
击穿电压温度系数 Temperature Coefficient of Breakdown Voltage
αV(BR)
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
电气特性 ( 除另有注释，默认TA=25 ℃ )
Electrical Characteristics (TA=25 °C unless otherwise noted )Table 1
标记代码
Device
Marking
Code
击穿电压
Breakdown
Voltage
VBR@IT
TVS
Min
最大反向
最大峰值
电压
Reverse
Stand-off
Voltage
VR
漏电流
Max.
Reverse
Leakage
IR@VR
脉冲电流
Max.
Peak Pulse
Current
IPPM
(10/1000 µS)
(mA)
(V)
(μA)
(A)
(V)
(A)
(V)
7
10
5
800
326.1
9.2
1630.5
11.89
Max
(V)
最大箝位电压
Max.
Clamping
Voltage
VC@IPPM
(10/1000 µS)
最大峰值
脉冲电流
Max.
Peak Pulse
Current
IPPM
(8/20 µS)
最大箝位电压
Max.
Clamping
Voltage
VC@IPPM
(8/20 µS)
Bi
SMDJ5.0A
SMDJ5.0CA
RDE DDE
SMDJ6.0A
SMDJ6.0CA
RDG DDG 6.67
7.37
10
6
800
291.3
10.3
1456.5
13.31
SMDJ6.5A
SMDJ6.5CA
RDK DDK
7.22
7.98
10
6.5
500
267.9
11.2
1339.5
14.47
SMDJ7.0A
SMDJ7.0CA
PDM DDM 7.78
8.6
10
7
200
250
12
1250
15.5
SMDJ7.5A
SMDJ7.5CA
PDP DDP
8.33
9.21
1
7.5
100
232.6
12.9
1163
16.67
SMDJ8.0A
SMDJ8.0CA
PDR DDR 8.89
9.83
1
8
50
220.6
13.6
1103
17.57
SMDJ8.5A
SMDJ8.5CA
PDT DDT
9.44
10.4
1
8.5
20
208.3
14.4
1041.5
18.6
SMDJ9.0A
SMDJ9.0CA
PDV DDV
10
11.1
1
9
10
194.8
15.4
974
19.9
SMDJ10A
SMDJ10CA
PDX DDX 11.1
12.3
1
10
5
176.5
17
882.5
21.96
SMDJ11A
SMDJ11CA
PDZ DDZ
12.2
13.5
1
11
2
164.8
18.2
824
23.51
SMDJ12A
SMDJ12CA
PEE DEE
13.3
14.7
1
12
2
150.8
19.9
754
25.71
SMDJ13A
SMDJ13CA
PEG DEG 14.4
15.9
1
13
2
139.5
21.5
697.5
27.78
SMDJ14A
SMDJ14CA
PEK DEK
15.6
17.2
1
14
2
129.3
23.2
646.5
29.97
SMDJ15A
SMDJ15CA
PEM DEM 16.7
18.5
1
15
2
123
24.4
615
31.52
SMDJ16A
SMDJ16CA
PEP DEP
17.8
19.7
1
16
2
115.4
26
577
33.59
SMDJ17A
SMDJ17CA
PER DER 18.9
20.9
1
17
2
108.7
27.6
543.5
35.66
SMDJ18A
SMDJ18CA
PET DET
20
22.1
1
18
2
102.7
29.2
513.5
37.73
SMDJ20A
SMDJ20CA
PEV DEV
22.2
24.5
1
20
2
92.6
32.4
463
41.86
SMDJ22A
SMDJ22CA
PEX DEX
24.4
26.9
1
22
2
84.5
35.5
422.5
45.87
SMDJ24A
SMDJ24CA
PEZ DEZ
26.7
29.5
1
24
2
77.1
38.9
385.5
50.26
SMDJ26A
SMDJ26CA
PFE DFE
28.9
31.9
1
26
2
71.3
42.1
356.5
54.39
SMDJ28A
SMDJ28CA
PFG DFG 31.1
34.4
1
28
2
66.1
45.4
330.5
58.66
SMDJ30A
SMDJ30CA
PFK DFK
33.3
36.8
1
30
2
62
48.4
310
62.53
SMDJ33A
SMDJ33CA
PFM DFM 36.7
40.6
1
33
2
56.3
53.3
281.5
68.86
SMDJ36A
SMDJ36CA
PFP DFP
44.2
1
36
2
51.6
58.1
258
75.06
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Bi
反向关断
电流
Test
Current
IT
Uni
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Uni
测试
6.4
40
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TVS
型号
Part Number
瞬态抑制二极管 TVS Diodes
型号
Part Number
标记代码
Device
Marking
Code
击穿电压
Breakdown
Voltage
VBR@IT
TVS
Min
最大峰值
漏电流
Max.
Reverse
Leakage
IR@VR
脉冲电流
Max.
Peak Pulse
Current
IPPM
(10/1000 µS)
(mA)
(V)
(μA)
(A)
最大箝位电压
Max.
Clamping
Voltage
VC@IPPM
(10/1000 µS)
最大峰值
最大箝位
脉冲电流
Max.
Peak Pulse
Current
IPPM
(8/20 µS)
电压
Max.
Clamping
Voltage
VC@IPPM
(8/20 µS)
(V)
(A)
(V)
SMDJ40A
SMDJ40CA
PFR DFR 44.4 49.1
1
40
2
46.5
64.5
232.5
83.33
SMDJ43A
SMDJ43CA
PFT DFT 47.8 52.8
1
43
2
43.2
69.4
216
89.66
SMDJ45A
SMDJ45CA
PFV DFV
55.3
1
45
2
41.3
72.7
206.5
93.93
SMDJ48A
SMDJ48CA
PFX DFX 53.3 58.9
1
48
2
38.8
77.4
194
100
SMDJ51A
SMDJ51CA
PFZ DFZ 56.7 62.7
1
51
2
36.4
82.4
182
106.46
SMDJ54A
SMDJ54CA RGE DGE
66.3
1
54
2
34.4
87.1
172
112.53
SMDJ58A
SMDJ58CA PGG DGG 64.4 71.2
1
58
2
32.1
93.6
160.5
120.93
SMDJ60A
SMDJ60CA PGK DGK 66.7 73.7
1
60
2
31
96.8
155
125.06
SMDJ64A
SMDJ64CA PGM DGM 71.1 78.6
1
64
2
29.1
103
145.5
133.07
SMDJ70A
SMDJ70CA PGP DGP 77.8
1
70
2
26.5
113
132.5
145.99
SMDJ75A
SMDJ75CA PGR DGR 83.3 92.1
1
75
2
24.8
121
124
156.33
SMDJ78A
SMDJ78CA PGT DGT 86.7 95.8
1
78
2
23.8
126
119
162.79
SMDJ85A
SMDJ85CA PGV DGV 94.4 104
1
85
2
21.9
137
109.5
177
SMDJ90A
SMDJ90CA PGX DGX 100
111
1
90
2
20.5
146
102.5
188.63
SMDJ100A SMDJ100CA PGZ DGZ 111
123
1
100
2
18.5
162
92.5
209.3
SMDJ110A SMDJ110CA PHE DHE 122
135
1
110
2
16.9
177
84.5
228.68
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(V)
最大反向
电压
Reverse
Stand-off
Voltage
VR
Bi
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反向关断
电流
Test
Current
IT
Uni
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Uni
Max
测试
50
60
86
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8
TVS
SMDJ Series
Transient Voltage Suppression Diodes
瞬态抑制二极管 TVS Diodes
型号
Part Number
标记代码
Device
Marking
Code
击穿电压
Breakdown
Voltage
VBR@IT
TVS
Min
Uni
Bi
Max
(V)
测试
反向关断
最大反向
最大峰值
电流
Test
Current
IT
电压
Reverse
Stand-off
Voltage
VR
漏电流
Max.
Reverse
Leakage
IR@VR
脉冲电流
Max.
Peak Pulse
Current
IPPM
(10/1000 µS)
(mA)
(V)
(μA)
(A)
最大箝位电压
Max.
Clamping
Voltage
VC@IPPM
(10/1000 µS)
最大峰值
最大箝位
脉冲电流
Max.
Peak Pulse
Current
IPPM
(8/20 µS)
电压
Max.
Clamping
Voltage
VC@IPPM
(8/20 µS)
(V)
(A)
(V)
Uni
Bi
SMDJ120A
SMDJ120CA
PHG DHG
133
147
1
120
2
15.5
193
77.5
249.35
SMDJ130A
SMDJ130CA
PHK DHK
144
159
1
130
2
14.4
209
72
270.03
SMDJ150A
-
PHM
-
167
185
1
150
2
12.3
243
61.5
313.95
-
SMDJ150CA*
-
DHM
167
185
1
150
2
16.5
243
61.5
313.95
SMDJ160A
-
PHP
-
178
197
1
160
2
11.6
259
58
334.63
-
SMDJ160CA*
-
DHP
178
197
1
160
2
15.5
259
58
334.63
SMDJ170A
-
PHR
-
189
209
1
170
2
10.9
275
54.5
355.3
-
SMDJ170CA*
-
DHR
189
209
1
170
2
14.6
275
54.5
355.3
SMDJ180A*
SMDJ180CA*
PHT DHT
200
221
1
180
2
13.7
292
51.5
377.26
SMDJ200A*
SMDJ200CA* PHV DHV
224
247
1
200
2
12.4
324
46.5
418.6
SMDJ220A*
SMDJ220CA*
PKE DKE
244
270
1
220
2
11.3
356
42
459.95
SMDJ250A*
SMDJ250CA* PKG DKG
279
309
1
250
2
9.9
405
37.5
523.26
SMDJ300A*
SMDJ300CA*
PKI
DKI
335
371
1
300
2
8.3
486
31
627.91
SMDJ350A*
SMDJ350CA*
PKJ
DKJ
391
432
1
350
2
7.1
567
26.5
732.56
SMDJ400A*
SMDJ400CA*
PKL DKL
447
494
1
400
2
6.2
648
23.5
837.21
SMDJ440A*
SMDJ440CA*
PKN DKN
492
543
1
440
2
5.7
713
21.5
921.19
注释 Notes:
1.对于VR为10 V及更低的双向产品，IR值需乘以两倍。
For bidirectional type having VR of 10 volts and less, the IR should be doubled.
2.对于没有A的产品，VBR范围为±10%且VC也比有A的产品高5%，当前不推荐没有A的产品用于新设计，带A的产品推荐优先选用。
For parts without A in the PN, the VBR tolerance is ± 10% and VC is 5% higher than parts with A. The parts without A are currently
available, but not recommended for new designs. The parts with A are preferred.
3.双芯片产品的详细信息，请参阅电气特性中以*标示的部件编号 。
For stacked die component details, please refer to models marked with * in electrical characteristics table.
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厦门赛尔特电子有限公司版权所有
All Rights Reserved by Xiamen SET Electronics Co., Ltd. 2021-2023 V2.1
E-mail : sales@SETfuse.com
9
TVS
SMDJ Series
Transient Voltage Suppression Diodes
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
伏安特性曲线 I-V Curve Characteristics
IF
单向
Uni-directional
VC
双向
Bi-directional
VBR VWM
IPP
IT
ID
VC VBR VWM
ID VF
IT
ID
IT
IPP
VWM VBR VC
IPP
TVS
TVS
参考性能曲线(除有另外注释，默认TA=25 ℃ )
Performance Curve for Reference(TA=25 °C unless otherwise noted)
脉冲峰值功率 PPPM - Peak Pulse Power (KW)
电压/电流 Voltage or Current
Voltage Transient
Voltage Across TVS
Current Throuth TVS
Time
100
TJ (initial)=Tamb
Stacked die,2kW
At 10×1000µs,25 °C
10
Signal die,1.5 KW
At 10×1000µs,25 °C
1.0
0.1
0.01
0.001
0.1
1
10
td – 脉宽 Pulse Width (ms)
FIGURE 2 峰值脉冲功率额定曲线
Peak Pulse Power Rating Curve
15
100
80
60
40
20
0
0
25
50
75
100
120
150
175
TJ –初始结温 Initial Junction Temperature (°C )
IPPM - 峰值脉冲电流 Peak Pulse Current, % IRSM
降额百分比 Peak Pulse Power (PPP) or
Current (IPPM) Derating in Percentage, %
FIGURE 1 TVS瞬态箝位波形
TVS Transients Clamping Waveform
Tr=10μs
TJ = 25 °C Pulse Width
(td) is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
10
Half Value
IPPM/2
10/1000 μs Waveform
as defined by R.E.A.
50
td
0
0
1.0
2.0
3.0
4.0
t –时间 Time (ms)
FIGURE 3 峰值脉冲功率降额曲线
Peak Pulse Power Derating Curve
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FIGURE 4 脉冲波形 Pulse Waveform
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10
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
Uni-direction at Zero-bias
10000
电容 CJ –(pF)
Bi-direction at Zero-bias
1000
Uni-direction at VR-bias
100
Bi-direction at VR-bias
10
1
TVS
1
10
100
1000
100
10
1
0.1
0.01
0.001
0.01
VBR – 反向击穿电压 Reverse Breakdown Voltage (V)
1
10
100
1000
TP – 脉宽 Pulse Duration (s)
FIGURE 5 典型结电容 Typical Junction Capacitance
FIGURE 6 典型瞬态热阻 Typical Transient Thermal Impedance
500
IF– 正向峰值电流 Peak Forward Current (A)
IFSM - 正向浪涌峰值电流 Peak Forward Surge Current (A)
0.1
TVS
瞬态热阻 Transient Thermal Impedance (°C /W)
100000
450
400
350
300
250
200
150
100
50
0
1
10
60 Hz周波数 Number of Cycles at 60 Hz
100
Single die
100.0
10.0
Stacked die
1.0
0.1
0.01
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VF– 正向峰值电压 Peak Forward Voltage (V)
FIGURE 7 最大非重复正向浪涌电流(单向型)
FIGURE 8 峰值正向电压及电流(典型值)
Maximum Non-Repetitive Forward Surge Current
Peak Forward Drop vs Peak Forward Current (Typical Values)
Uni-Directional only
环境特性 Environmental Specifications
高温存储
High Temp. Storage
JESD22-A103
高温反偏 HTRB
JESD22-A108
温度循环
Temperature Cycling
JESD22-A104
湿度敏感性等级 MSL
JESDEC-J-STD-020, Level 1
高温高湿反偏 H3TRB
JESD22-A101
耐焊接热 RSH
JESD22-A111
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物理特性 Physical Specifications
重量
Weight
0.007 ounce,0.21 grams
封装
Case
JESD22DO214AB. Molded plastic body
over glass passivated junction
极性
Polarity
Color band denotes positive end (cathode)
except Bidirectional
端子
Terminal
Matte Tin-plated leads, Solderability per
JESD22-B102
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11
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
焊接参数 Soldering Parameters
tP
TP
Critical Zone
TL to TP
Ramp-up
tL
TS (max)
TS (min)
Ramp-down
TVS
温度 Temperature (T)
TVS
TL
tS
Preheat
25 °C
t 25 °C to Peak
时间 Time (t)
回流焊条件 Reflowing Condition
回流焊接参数
Reflow Soldering Parameters
预热 Pre-heat
无铅组装
Lead-Free Assembly
最低温(TS (min))
Temperature Min (TS (min))
150 °C
最高温(TS (max))
Temperature Max (TS (max))
200 °C
升温时长(tS)
Time (min to max) (tS)
60 ~ 120 seconds
平均升温速率(液相温度(TL)至峰值温度(TP))
3 °C / second max.
Average Ramp-up Rate ( Liquidus Temp (TL) to Peak Temp (TP))
TS (max) 到TL升温速率
3 °C / second max.
TS (max) to TL Ramp-up Rate
温度 Temperature (TL) (Liquidus)
回流 Reflow
时长 Time (min to max) (tL)
实际峰值温度 (tP) 5 °C 以内的时间
Time of within 5 °C of Actual Peak Temperature (tP)
降温速率 Ramp-down Rate
8 Minutes max.
260 °C
极限温度 Do Not Exceed
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20 ~ 40 seconds
6 °C / second max.
25 °C 至峰值温度时长 Time from 25 °C to Peak Temperature
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60 ~ 150 seconds
260+0/-5 °C
峰值温度 Peak Temperature (TP)
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217 °C
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12
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
尺寸
Dimension (mm)
W
16.00+0.3/-0.1
P0
4.00±0.10
P1
8.00±0.10
P2
2.00±0.10
E
编带
Tape
D0
1.55±0.05
D1
1.55±0.05
E
1.75±0.10
F
7.50±0.10
A0
6.15±0.10
B0
8.30±0.10
K0
2.48±0.10
T
0.30±0.05
P2
T
D0
D1
A0
B0
W
TVS
P0
P1
K0
卷盘尺寸 Reel Size
13寸卷盘 13” Reel
A
A
330 mm
C
13.2 mm
W1
16.4 mm
C
Arbor hole Dia.
Direction of Feed
W1
型号
Part Number
封装
Package
卷盘数量
QTY
(Reel)
包装选项
Packaging Option
包装规格
Packaging Specification
SMDJ×××
DO-214AB
3000 PCS
Tape & Reel – 16 mm tape/13” reel
EIA STD RS-481
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13
TVS
符号
Symbol
F
包装信息 Packaging Information
瞬态抑制二极管 TVS Diodes
SMDJ Series
TVS
TVS
Transient Voltage Suppression Diodes
注意
ATTENTION
使用方法 Usage
1.
2.
3.
请在规定的温度范围内使用TVS。
TVS must be operated in the specified ambient temp.
请勿使用强极性溶剂清洗TVS以免破坏封装层。
Do not clean the TVS with strong polar solvent such as ketone, esters, benzene and halogenated hydrocarbon, to avoid
damaging the encapsulating layer.
请勿对TVS施加剧烈的振动，冲击或压力，以避免元件开裂。
Please do not apply severe vibration, shock or pressure to TVS, to avoid element cracking.
更换 Replacement
1.
2.
若TVS出现可视化损伤，请将其更换。
If TVS is visually damaged, please replace it.
TVS为非修理型产品，安全起见，请更换同等规格的TVS。
TVS is a non-repairable product. For safety sake, please use equivalent TVS for replacement.
存储 Storage
1.
存储温度范围。
Storage Temp. Range: (-55 to 150) °C.
2.
请勿将TVS存放于高温高湿或腐蚀性气体环境中，已避免影响引脚的焊接性能，请于收货后一年内进行使用 。
Do not store the TVS at the high temp., high humidity or corrosive gas environment, to avoid influencing the solder-ability
of the lead wires. The product shall be used up within 1 year after receiving the goods.
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14
瞬态抑制二极管 TVS Diodes
SMDJ Series
Transient Voltage Suppression Diodes
环境条件 Environmental Conditions
1.
2.
3.
请勿暴露于室外阳光直射环境。
TVS should not be exposed to the open air, nor direct sunshine.
请避免雨水，水汽等高温高湿环境。
TVS should avoid rain, water vapor or other condition of high temp. and high humidity.
请避免沙尘，盐雾等有害环境。
TVS should avoid sand dust, salt mist, or other harmful gases.
TVS最大典型结电容 Max. Typical Capacitance of TVS
高频线路应用中请参照规格书中所给出的典型电容曲线。
The typical capacitance of TVS is listed in the specifications. Designers may refer to it when designing TVS in high frequency
circuit.
1.
TVS
TVS
安装机械应力 Installation Mechanical Stress
安装TVS时请避免敲击，防止物理损伤。
Do not knock TVS when installing, to avoid mechanical damage.
2.
请不要对 TVS 施加剧烈的振动、冲击或压力，以免表面树脂或元件破裂。
Please do not apply severe vibration, shock or pressure to TVS, to avoid surface resin or element cracking.
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