ZM040P04D

ZM040P04D ZMJ SEMICONDUCTOR CO., LTD 40V P-Channel Power MOSFET ● General Description ● Product Summary The ZM040P04D combines advanced trench VDS =-40V MOSFET technology with a low resistance package RDS(ON) =4mΩ to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. I D =-90A ● Features ■ Advance high cell density Trench technology D ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application G ■MB/VGA Vcore D S TO-252 ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver ●Ordering Information: Part NO. ZM040P04D Marking ZM040P04 Packing Information REEL TAPE Basic ordering unit (pcs) 2500 ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±25 V ID@TC=25℃ -90 A ID@TC=75℃ -68 A ID@TC=100℃ -56 A IDM -270 A Total Power Dissipation PD@TC=25℃ 56 W Total Power Dissipation PD@TA=25℃ 2 W TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 840 mJ Continuous Drain Current Pulsed Drain Current ① Operating Junction Temperature Rev. B - Nov, 2021 1 http://www.zmjsemi.com ZM040P04D ZMJ SEMICONDUCTOR CO., LTD 40V P-Channel Power MOSFET ●Thermal resistance Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 2.2 °C/W Thermal resistance, junction - ambient RthJA - - 60 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C Min. Typ Max. Unit Parameter ●Electronic Characteristics Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =-250uA -40 Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA -1.2 Drain-Source Leakage Current IDSS Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) Forward Transconductance gFS V -2.5 V VDS=-40V, VGS =0V 1.0 uA VGS=±20V, VDS =0V ±100 nA VGS=-10V, ID=-30A 4.0 5.2 mΩ VGS=-4.5V, ID=-25A 6.0 7.8 mΩ VDS =-10V, ID=-20A 10 s ●Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition f = 1MHz Min. Typ Max. - 6970 - - 616 - - 243 - Unit pF ●Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD = 25V - 130 - Gate - Source charge Qgs ID = 5A - 31 - Gate - Drain charge Qgd VGS = 10V - 15 - Unit nC Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; Rev. B - Nov, 2021 2 http://www.zmjsemi.com ZM040P04D ZMJ SEMICONDUCTOR CO., LTD 40V P-Channel Power MOSFET Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics VGS=-10V VGS=-4.5V Fig.3 Threshold Voltage V.S Junction Temperature Fig.5 On-Resistance VS Gate Source Voltage Rev. B - Nov, 2021 Fig.4 Resistance V.S Drain Current Fig.6 On-Resistance V.S Junction Temperature 3 http://www.zmjsemi.com ZM040P04D ZMJ SEMICONDUCTOR CO., LTD 40V P-Channel Power MOSFET Fig.9 SOA Maximum Safe Operating Area Fig.10 ID-Junction Temperature Figure 11. Diode Forward Voltage vs. Current Figure 12. Transfer Characteristics Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Rev. B - Nov, 2021 Fig.10 Gate Charge Waveform 4 http://www.zmjsemi.com ZM040P04D ZMJ SEMICONDUCTOR CO., LTD 40V P-Channel Power MOSFET Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform ●Dimensions(TO-252) Unit：mm SYMBOL min max SYMBOL min max A 2.10 2.50 B 0.85 1.25 b 0.50 0.80 b1 0.50 0.90 b2 0.45 0.70 C 0.45 0.70 D 6.30 6.75 D1 5.10 5.50 E 5.30 6.30 e1 2.25 2.35 L1 9.20 10.60 e2 4.45 4.75 L2 0.90 1.75 L3 0.60 1.10 Rev. B - Nov, 2021 5 http://www.zmjsemi.com ZM040P04D ZMJ SEMICONDUCTOR CO., LTD K Rev. B - Nov, 2021 0.00 40V P-Channel Power MOSFET 0.23 6 http://www.zmjsemi.com