PSMN6R9-100YSFX

PSMN6R9-100YSF NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package 8 December 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. 2. Features and benefits • • • • • • • Low Qrr for higher efficiency and lower spiking Qualified to 175 °C Low QG x RDSon FOM for high efficiency switching applications Strong avalanche energy rating (Eas) Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK56 package Wave-solderable LFPAK56 package 3. Applications • • • • • • Synchronous rectifier in AC-DC and DC-DC BLDC motor control USB-PD and mobile fast-charge adapters LED lighting Full-bridge and half-bridge applications Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 100 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 90 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 238 W VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 5.6 7 mΩ ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 12; Fig. 13 - 10.3 - nC IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Fig. 16 - 52.4 - nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 4 mounting base; connected to drain LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package PSMN6R9-100YSF Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PSMN6R9-100YSF 6F9S10 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 100 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 238 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 90 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 88 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 360 A IDM peak drain current Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 2 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package Symbol Parameter Conditions Min Max Unit Source-drain diode IS source current Tmb = 25 °C - 90 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 360 A [1] - 321 mJ [1] - 36 A Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy IAS non-repetitive avalanche Vsup ≤ 100 V; VGS = 10 V; Tj(init) = 25 °C; current RGS = 50 Ω [1] ID = 36 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; Fig. 4; Unclamped Protected by 100% test 03aa16 120 aaa-024413 100 ID (A) Pder (%) 80 80 60 40 40 20 0 0 50 100 150 Tmb (°C) 0 200 0 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V Fig. 2. Fig. 1. ID (A) Normalized total power dissipation as a function of mounting base temperature Continuous drain current as a function of mounting base temperature aaa-024412 103 Limit RDSon = VDS / ID 102 tp = 10 us 100 us 10 DC 1 1 ms 10 ms 100 ms 10-1 10-1 1 10 102 VDS (V) 103 Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 3 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package IAL (A) aaa-024414 102 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 0.56 0.63 K/W Zth(j-mb) (K/W) aaa-024415 1 δ = 0.5 10-1 0.2 0.1 0.05 0.02 10-2 single shot P δ= Fig. 5. 10-5 10-4 10-3 10-2 T t tp 10-3 10-6 tp T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 4 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = -55 °C - 3.7 - V ID = 1 mA; VDS=VGS; Tj = 175 °C - 2 - V ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9 2 3.3 4 V Static characteristics V(BR)DSS VGS(th) ΔVGS(th)/ΔT gate-source threshold voltage variation with temperature 25 °C ≤ Tj ≤ 175 °C - -8.4 - mV/K IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 5 µA VDS = 100 V; VGS = 0 V; Tj = 125 °C - - 100 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 5 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 5 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 5.6 7 mΩ VGS = 7 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 6.6 10.2 mΩ VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 11 - 8.9 10.9 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 11 - 12.5 15.4 mΩ f = 1 MHz - 0.9 - Ω ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 12; Fig. 13 - 50.3 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 20.9 - nC ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 12; Fig. 13 - 17.1 - nC - 9.9 - nC IGSS RDSon RG gate leakage current drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gatesource charge QGS(th-pl) post-threshold gatesource charge - 7.2 - nC QGD gate-drain charge - 10.3 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 50 V; Fig. 12; Fig. 13 - 5.1 - V Ciss input capacitance - 3570 - pF Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 14 - 722 - pF Crss reverse transfer capacitance - 19 - pF td(on) turn-on delay time - 14.8 - ns tr rise time - 14.2 - ns PSMN6R9-100YSF Product data sheet VDS = 50 V; RL = 2 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 5 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package Symbol Parameter td(off) tf Conditions Min Typ Max Unit turn-off delay time - 27.6 - ns fall time - 16 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.8 1.2 V trr reverse recovery time - 45.4 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Fig. 16 - 52.4 - nC aaa-024411 120 ID (A) 100 10 V 80 20 VGS = 5.5 V 60 15 5V 40 20 0 Fig. 6. aaa-024416 30 RDSon (mΩ) 25 6V 7V 8V 10 5 4.5 V 0 1 2 3 VDS (V) 0 4 0 4 8 12 16 VGS (V) 20 Tj = 25 °C Tj = 25 °C; ID = 25 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-024417 120 ID (A) 100 aaa-011501 10-1 ID (A) 10-2 80 10-3 60 10-4 40 175°C 20 0 0 1 2 3 4 10-5 Tj = 25°C 5 6 7 VGS (V) 10-6 8 0 1 2 3 4 VGS (V) 5 VDS = 12 V Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values PSMN6R9-100YSF Product data sheet Fig. 9. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 6 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package aaa-024418 30 RDSon (mΩ) 25 4.5 V 5V a 5.5 V aaa-026779 2.4 2 6V 20 1.6 15 1.2 7V 10 0.8 8V 5 0.4 VGS = 10 V 0 0 20 40 60 80 100 ID (A) 0 -60 120 -30 0 30 60 90 120 150 Tj (°C) 180 Tj = 25 °C Fig. 10. Drain-source on-state resistance as a function of drain current; typical values VGS (V) Fig. 11. Normalized drain-source on-state resistance factor as a function of junction temperature aaa-024420 10 VDS ID 50 V 8 VGS(pl) VDS = 20 V 6 80 V VGS(th) VGS 4 QGS1 2 0 QGS2 0 10 20 30 40 50 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 13. Gate charge waveform definitions 60 Tj = 25 °C; ID = 25 A Fig. 12. Gate-source voltage as a function of gate charge; typical values PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 7 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package aaa-024421 104 C (pF) Ciss 103 aaa-024422 200 IS (A) 160 Coss 120 80 102 40 175°C Tj = 25°C Crss 10 10-1 1 10 VDS (V) 0 102 VGS = 0 V; f = 1 MHz 0 0.2 0.4 0.6 0.8 1 VSD (V) 1.2 VGS = 0 V Fig. 14. Input, output and reverse transfer capacitances Fig. 15. Source-drain (diode forward) current as a as a function of drain-source voltage; typical function of source-drain (diode forward) values voltage; typical values 003aaf444 ID (A) trr ta tb 0 0.25 IRM tb S= t a IRM t (s) Fig. 16. Reverse recovery waveform definitions PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 8 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) mm A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 9 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package 12. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 18. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 10 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package Wave soldering footprint information for LFPAK56 package SOT669 4.826 1.78 1.72 2.1 1.4 0.6 (x4) 1.27 0.635 solder lands Dimensions in mm Issue date 15-04-13 15-04-16 sot669_fw Fig. 19. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669) PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 11 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 13. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’ warranty of the product for such automotive applications, use and specifications, and (b) whenever All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 12 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package customer uses the product for automotive applications beyond Nexperia’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’ standard warranty and Nexperia’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 13 / 14 PSMN6R9-100YSF Nexperia NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package 14. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline.......................................................... 9 12. Soldering................................................................... 10 13. Legal information..................................................... 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 8 December 2017 PSMN6R9-100YSF Product data sheet All information provided in this document is subject to legal disclaimers. 8 December 2017 © Nexperia B.V. 2017. All rights reserved 14 / 14