SS13M – SS16M
Taiwan Semiconductor
1A, 30V - 60V Schottky Barrier Surface Mount Rectifier
FEATURES
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KEY PARAMETERS
Very low profile - typical height of 0.68mm
Low power loss, high efficiency
Ideal for automated placement
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● DC to DC converter
PARAMETER
VALUE
UNIT
IF
1
A
VRRM
30 - 60
V
IFSM
25
A
TJ MAX
150
°C
Package
Micro SMA
Configuration
Single die
MECHANICAL DATA
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Case: Micro SMA
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.006g (approximately)
Micro SMA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Marking code on the device
SS13M
SS14M
SS16M
A
B
C
UNIT
Repetitive peak reverse voltage
VRRM
30
40
60
V
Reverse voltage, total rms value
VR(RMS)
21
28
42
V
Forward current
Surge peak forward current, 8.3ms single half
sine wave superimposed on rated load
Junction temperature
IF
1
A
IFSM
25
A
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
1
Version: O2103
SS13M – SS16M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
RӨJL
30
°C/W
Junction-to-ambient thermal resistance
RӨJA
125
°C/W
Junction-to-case thermal resistance
RӨJC
40
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
0.45
-
V
0.52
0.55
V
0.35
-
V
IF = 1.0A,TJ = 125°C
0.46
0.50
V
IF = 0.5A,TJ = 25°C
0.51
-
V
0.64
0.68
V
0.46
-
V
0.57
0.60
V
-
50
µA
-
10
mA
50
-
pF
40
-
pF
IF = 0.5A,TJ = 25°C
Forward voltage
SS13M
IF = 1.0A,TJ = 25°C
SS14M
IF = 0.5A,TJ = 125°C
(1)
SS16M
IF = 1.0A,TJ = 25°C
IF = 0.5A,TJ = 125°C
VF
VF
IF = 1.0A,TJ = 125°C
Reverse current @ rated VR
TJ = 25°C
(2)
IR
TJ = 125°C
SS13M
Junction capacitance
SS14M
1MHz, VR = 4.0V
SS16M
CJ
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
PACKING
SS1xM
Micro SMA
12,000 / Tape & Reel
Notes:
1. “x” defines voltage from 30V(SS13M) to 60V(SS16M)
2
Version: O2103
SS13M – SS16M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
1000
CAPACITANCE (pF)
1
0
SS13M - SS14M
100
SS16M
10
f=1.0MHz
Vsig=50mVp-p
1
50
75
100
125
150
0.1
1
LEAD TEMPERATURE (°C)
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
Fig.4 Typical Forward Characteristics
100
SS13M - SS14M
TJ=150°C
1
TJ=125°C
0.1
0.01
TJ=25°C
0.001
0.0001
10
20
30
40
50
60
70
80
90 100
10 10
1
SS13M - SS14M
UF1DLW
TJ=150°C
TJ=125°C
TJ=125°C
TJ=25°C
0.01
0.1
0.001
0.1 0.2 0.3 0.4
0.3
0.4
0.5
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
SS16M
TJ=150°C
1
TJ=125°C
0.01
TJ=25°C
0.0001
10
20
30
40
50
60
70
80
0.5 0.6 0.7 0.8 0.9
0.6
0.7
0.8
0.9
1.0
1
1.1
1.2
1.1
1.2
Fig.6 Typical Forward Characteristics
100
0.001
Pulse width 300μs
1% duty cycle
Pulse width
FORWARD VOLTAGE (V)
Fig.5 Typical Reverse Characteristics
0.1
TJ=25°C
1
0.1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
10
10
(A)
25
90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10 10
1
1
0.1
0.01
SS16M
UF1DLW
TJ=150°C
TJ=125°C
TJ=125°C
TJ=25°C
(A)
AVERAGE FORWARD CURRENT (A)
2
TJ=25°C
Pulse width 300μs
1% duty cycle
Pulse width
0.1
0.001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
FORWARD VOLTAGE (V)
3
Version: O2103
SS13M – SS16M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.7 Maximum Non-Repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
30
8.3ms single half sine wave
25
20
15
10
5
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.8 Typical Transient Thermal Impedance
TRANSIENT THERMAL IMPEDANCE (°C/W)
1000
SS16M
100
SS13M - SS14M
10
1
0.1
1
10
100
PULSE DURATION (s)
4
Version: O2103
SS13M – SS16M
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
Micro SMA
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
YW
5
= Marking Code
= Data Code
Version: O2103
SS13M – SS16M
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: O2103
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